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    DAMASCENE MUTUAL CONNECTION WITH IMPROVED RELIABILITY AND ITS MANUFACTURE
    3.
    发明专利
    DAMASCENE MUTUAL CONNECTION WITH IMPROVED RELIABILITY AND ITS MANUFACTURE 失效

    公开(公告)号：JP2000100822A

    公开(公告)日：2000-04-07

    申请号：JP26415999

    申请日：1999-09-17

    Applicant: IBM ,  SIEMENS AG

    Inventor： CLEVENGER LARRY ,  FILIPPI JR RONALD G ,  GAMBINO JEFFREY ,  GIGNAC LYNNE ,  HURD JEFFERY L ,  HOINKIS MARK ,  IGGULDEN ROY C ,  MEHTER EBRAHIM ,  RODBELL KENNETH P ,  SCHNABEL FLORIAN ,  WEBER STEFAN J

    IPC: H01L23/52 ,  H01L21/283 ,  H01L21/3205 ,  H01L21/768

    Abstract: PROBLEM TO BE SOLVED: To limit the forming quantity of an inter-metallic compound by sticking a wetting layer containing first metal which is brought into contact with an insulator to a recessed part, a uniform barrier layer on it, and a second metallic conduction layer on it at a temperature which is lower than that, at which the inter-metal compound is generated by means of diffusing first and second metals on the barrier layer. SOLUTION: Barrier layers 20 of nonreactive compounds are formed on wetting layers 18, where the metal of titanium(Ti) is evaporated by CVD on the sidewalls of the recessed parts 12 of an insulating layer 10 on the substrate 11 of a silicon water. The barrier layers 20 are formed of an arbitrary material, whose diffusion temperature of the constitution elements of the wetting layers 18 and the metallic layers, is higher than the reaction temperature of the constitution elements, and titanium nitride(TiN) is desirable. It is thicker than the sidewalls of the wetting layers 18 and is more uniform. Then, the recessed parts 12 are completely filled with the conduction layers a metal such as aluminum(Al). In the reaction between Ti of the wetting layers 18 and Al of the conduction layers 22, Ti and Al are unable to diffuse at a temperature lower than 430 deg.C, and they are brought into contact with each other and do not react.

    FORMATION OF METAL FILLING STRUCTURE PART
    4.
    发明专利
    FORMATION OF METAL FILLING STRUCTURE PART 失效

    公开(公告)号：JP2000049117A

    公开(公告)日：2000-02-18

    申请号：JP16303399

    申请日：1999-06-09

    Applicant: IBM ,  SIEMENS AG

    Inventor： CLEVENGER LARRY ,  HOINKIS MARK ,  IGGULDEN ROY C ,  WEBER STEFAN J

    IPC: H01L21/3205 ,  C23C14/14 ,  C23C14/58 ,  C23C16/56 ,  C23C28/02 ,  H01L21/28 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522

    Abstract: PROBLEM TO BE SOLVED: To provide a technology for filling an opening part, such as a trench and barrier of high-aspect ratio using an economical and reliable method. SOLUTION: An improved method for forming a metal filling structure part at an opening part of a substrate 1 of an integrated circuit device is provided. An intermittent metal liner 18 by CVD is formed at an opening part 100, which is to be filled, provided at a dielectrics layer of the substrate 1. On the intermittent metal liner 18, a metal is further deposited by physical vapor-deposition to form a metal filling structure part. Since the intermittent metal liner provides a wettability equal to or better than that of the intermittent (??) CVD liner, an opening part of an opening width significantly narrower than 250 nm can be filled.

    5.
    发明专利
    未知

    公开(公告)号：DE60034611T2

    公开(公告)日：2008-01-31

    申请号：DE60034611

    申请日：2000-02-04

    Applicant: QIMONDA AG ,  IBM

    Inventor： WEBER STEFAN J ,  IGGULDEN ROY ,  NARAYAN CHANDRASEKHAR ,  BRINTZINGER AXEL CHRISTOPH ,  HOINKIS MARK ,  VAN DEN BERG ROBERT

    IPC: H01H85/00 ,  H01H69/02 ,  H01L23/525 ,  H01L21/82

    Abstract: A fuse for semiconductor devices in accordance with the present invention includes a substrate having a conductive path disposed on a surface thereof, a dielectric layer disposed on the substrate and a vertical fuse disposed perpendicularly to the surface through the dielectric layer and connecting to the conductive path, the vertical fuse forming a cavity having a liner material disposed along vertical surfaces of the cavity, the vertical surfaces being melted to blow the fuse. Methods for fabrication of the vertical fuse are also included.

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