公开(公告)号：JP2000195860A

公开(公告)日：2000-07-14

申请号：JP37512499

申请日：1999-12-28

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： SCHNABEL RAINER FLORIAN ,  RONALD PHILLIPI ,  HOINKIS MARK ,  WEBER STEFAN ,  ROY IGARUDEN ,  WEIGAND PETER ,  LAWRENCE CLEVENGER

IPC: H01L23/52 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/82

Abstract: PROBLEM TO BE SOLVED: To increase the electromigration lifetime of a semiconductor device by stacking a liner by an ionizing metal plasma physical deposition method, thereby reducing the mass carriage by electromigration. SOLUTION: A dielectric layer is made on a substrate. The dielectric layer is patterned, and a contact hole 26 is made, and conductive material is stacked on a dielectric layer so as to fill the contact hole 26 and cover the dielectric layer. Next, excess material is removed by polishing from the surface 29 so as to make a flat surface for an additional layer. Next, a liner 40 is stacked on the dielectric layer 29. This liner consists of a material having high electromigration resistance. For example, titanium(Ti) and its alloy tantalum(Ta) and its alloy, or TiN or Tan is included as such a liner material. This liner 40 is stacked, using an ionizing metal plasma physical deposition method.

公开(公告)号：DE60142482D1

公开(公告)日：2010-08-12

申请号：DE60142482

申请日：2001-08-24

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： IGGULDEN ROY ,  WEBER STEFAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

公开(公告)号：WO0199182A3

公开(公告)日：2002-04-18

申请号：PCT/US0119820

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： WEBER STEFAN ,  RUF ALEXANDER ,  LIN CHENTING ,  KNORR ANDREAS

IPC: H01L21/285 ,  H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76871 ,  H01L21/76877

Abstract: A method for forming metallizations for semiconductor devices, in accordance with the present invention, includes forming trenches (107) in a dielectric layer (104), depositing a single layer diffusion barrier (116) in the trenches, and without an air-brake, depositing a seed layer (118) of metal on the surface of the diffusion barrier. The trenches are then filled with metal (120). The metal adheres to the seed layer, which adheres to the diffusion barrier to provide many improvements in electrical characteristics as well as to reduce failures in the semiconductor devices.

Abstract translation: 根据本发明的用于形成用于半导体器件的金属化的方法包括在电介质层（104）中形成沟槽（107），在沟槽中沉积单层扩散阻挡层（116），并且没有空气制动， 在扩散阻挡层的表面上沉积金属种子层（118）。 然后用金属（120）填充沟槽。 金属粘附到种子层，其粘附到扩散阻挡层，以提供许多电特性的改进以及减少半导体器件的故障。

公开(公告)号：DE60142481D1

公开(公告)日：2010-08-12

申请号：DE60142481

申请日：2001-08-24

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： WEBER STEFAN

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/522 ,  H01L23/532

公开(公告)号：JPH11330244A

公开(公告)日：1999-11-30

申请号：JP9247299

申请日：1999-03-31

Applicant: SIEMENS AG ,  IBM

Inventor： CLEVENGER LAWRENCE A ,  FILIPPI RONALD G ,  HOINKIS MARK ,  HURD JEFFERY L ,  IGGULDEN ROY C ,  PALM HERBERT ,  POETZLBERGER HANS W ,  RODBELL KENNETH P ,  SCHNABEL FLORIAN ,  WEBER STEFAN ,  MEHTER EBRAHIM A

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide an interconnection with a damascene structure having an improved reliability, by using a liner for surrounding or sealing a conductor to give random crystal grain orientation to a conductive material. SOLUTION: A layer 137 is deposited on an insulating layer 130. A layer for lining the wall and the bottom of the contact opening functions as a base coat or liner for a conductive layer 138 to be subsequently deposited to fill the contact opening, and the degree of crystal grain orientation randomness of a material that fills the damascene structure is expanded. A parameter used for depositing a TiN layer is selected to expand the degree of base coat crystal grain orientation randomness and/or amorphous characteristics. The liner has an enough thickness to ensure the random crystal grain orientation of the conductive material to be subsequently deposited. Thus, the interconnection in an IC having the improved reliability can be obtained.