公开(公告)号：US20220093316A1

公开(公告)日：2022-03-24

申请号：US17029870

申请日：2020-09-23

Applicant: Intel Corporation

Inventor： Benjamin Duong ,  Michael Garelick ,  Darko Grujicic ,  Tarek Ibrahim ,  Brandon C. Marin ,  Sai Vadlamani ,  Marcel Wall

IPC: H01F27/28 ,  H01L23/64 ,  H01F41/32 ,  H01L23/498

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

公开(公告)号：US20250006646A1

公开(公告)日：2025-01-02

申请号：US18216525

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Xing Sun ,  Srinivas Pietambaram ,  Darko Grujicic ,  Rengarajan Shanmugam ,  Brian Balch ,  Micah Armstrong ,  Qiang Li ,  Marcel Wall ,  Rahul Manepalli

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/15 ,  H01L25/065

Abstract: Integrated circuit (IC) die packages including a glass with conductive through-glass vias (TGVs). The TGVs are lined with a buffer comprising an inorganic material having a low elastic (Young's) modulus. The buffer may thereby accommodate internal stress between the glass and through via metallization formed over the buffer. The compliant inorganic material may be a metal or metal alloy, for example, different than that of the via metallization. The inorganic material may also be a metal nitride, metal silicide, or metal carbide. A TGV buffer may be one material layer of a stack comprising two or more material layers deposited upon TGV sidewall surfaces. A routing structure may be built-up on at least one side of the glass and IC die assembled to the routing structure. The buffer Ipresent within the TGVs may be absent from metal features of the routing structure.

公开(公告)号：US12033930B2

公开(公告)日：2024-07-09

申请号：US17033392

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Jieying Kong ,  Yiyang Zhou ,  Suddhasattwa Nad ,  Jeremy Ecton ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon Marin ,  Zhiguo Qian ,  Sarah Blythe ,  Bohan Shan ,  Jason Steill ,  Sri Chaitra Jyotsna Chavali ,  Leonel Arana ,  Dingying Xu ,  Marcel Wall

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49838 ,  H01L21/485 ,  H01L23/49827

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

公开(公告)号：US20220102259A1

公开(公告)日：2022-03-31

申请号：US17033392

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Jieying Kong ,  Yiyang Zhou ,  Suddhasattwa Nad ,  Jeremy Ecton ,  Hongxia Feng ,  Tarek Ibrahim ,  Brandon Marin ,  Zhiguo Qian ,  Sarah Blythe ,  Bohan Shan ,  Jason Steill ,  Sri Chaitra Jyotsna Chavali ,  Leonel Arana ,  Dingying Xu ,  Marcel Wall

IPC: H01L23/498 ,  H01L21/48

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

公开(公告)号：US20240332100A1

公开(公告)日：2024-10-03

申请号：US18193172

申请日：2023-03-30

Applicant: Intel Corporation

Inventor： Pratyush Mishra ,  Marcel Wall ,  Sashi Kandanur ,  Pooya Tadayon ,  Srinivas Pietambaram ,  Benjamin Duong ,  Suddhasattwa Nad

IPC: H01L23/15 ,  H01F27/24 ,  H01L23/48 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L23/15 ,  H01F27/24 ,  H01L23/481 ,  H01L23/49822 ,  H01L23/5226

Abstract: Glass-integrated inductors in integrated circuit (IC) packages are disclosed. A disclosed IC package includes a glass layer having an aperture extending therethrough, and an inductor in the aperture, the inductor including a metal core extending through the aperture, the metal core electrically coupled to interconnects on opposite sides of the glass layer, and at least one of a ferrite or a magnetic alloy in the aperture and laterally surrounding the metal core.

公开(公告)号：US20240222018A1

公开(公告)日：2024-07-04

申请号：US18147503

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Thomas Sounart ,  Henning Braunisch ,  Aleksandar Aleksov ,  Kristof Darmawikarta ,  Numair Ahmed ,  Darko Grujicic ,  Suddhasattwa Nad ,  Benjamin Duong ,  Marcel Wall ,  Shayan Kaviani

IPC: H01G4/01 ,  H01G4/30 ,  H01G4/33 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01G4/01 ,  H01G4/306 ,  H01G4/33 ,  H01L21/4846 ,  H01L23/5386 ,  H01L28/87 ,  H01L28/92 ,  H01G4/008

Abstract: Substrate package-integrated oxide capacitors and related methods are disclosed herein. An example apparatus including a first layer and a thin film capacitor including a second layer on the first layer, the second layer defining a plurality of openings and a third layer disposed on the first layer and in the plurality of openings, the second layer and the third layer corresponding to electrodes of a capacitor and a fourth layer disposed between the first layer and the second layer, the third layer including an oxidized material, the third layer forming a dielectric of the capacitor.

公开(公告)号：US20240006380A1

公开(公告)日：2024-01-04

申请号：US17856830

申请日：2022-07-01

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Srinivas Pietambaram ,  Rahul Manepalli ,  Marcel Wall ,  Darko Grujicic

IPC: H01L25/065 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L25/0655 ,  H01L23/5383 ,  H01L23/49866 ,  H01L21/4857

Abstract: High-density IC die package routing structures with one or more nitrided surfaces. Metallization features may be formed, for example with a plating process. Following the plating process, a surface of the metallization features may be exposed to a surface treatment that incorporates nitrogen onto a surface of the metallization. The presence of nitrogen may chemically improve adhesion between finely patterned metallization features and package dielectric material. Accordingly, surface roughness of metallization features may be reduced without suffering delamination. With lower surface roughness, metallization features may transmit higher frequency data signals with lower insertion loss.

公开(公告)号：US12159825B2

公开(公告)日：2024-12-03

申请号：US17197531

申请日：2021-03-10

Applicant: Intel Corporation

Inventor： Rahul Manepalli ,  Suddhasattwa Nad ,  Marcel Wall ,  Darko Grujicic

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: An electronic substrate may be formed having at least one metal-to-dielectric adhesion promotion material layer therein. The electronic substrate may comprise a conductive metal trace, a dielectric material layer on the conductive metal trace, and the adhesion promotion material layer between the conductive metal trace and the dielectric material layer, wherein the adhesion promotion material layer comprises an organic adhesion material and a metal constituent dispersed within the organic adhesion material, wherein a metal within the metal constituent has a standard reduction potential greater than a standard reduction potential of the conductive metal trace.

公开(公告)号：US20240331921A1

公开(公告)日：2024-10-03

申请号：US18739049

申请日：2024-06-10

Applicant: Intel Corporation

Inventor： Benjamin Duong ,  Michael Garelick ,  Darko Grujicic ,  Tarek Ibrahim ,  Brandon C. Marin ,  Sai Vadlamani ,  Marcel Wall

IPC: H01F27/28 ,  H01F41/32 ,  H01L23/498 ,  H01L23/64

CPC classification number: H01F27/2804 ,  H01F41/32 ,  H01L23/49827 ,  H01L23/645 ,  H01F2027/2809 ,  H01L23/49816

Abstract: An electronic substrate may be fabricated by forming a base substrate and forming an inductor extending through the base substrate, wherein the inductor includes a magnetic material layer and a barrier layer, such that the barrier layer prevents the magnetic material layer from leaching into plating solutions during the fabrication of the electronic substrate. In one embodiment, the barrier material may comprise titanium. In another embodiment, the barrier layer may comprise a polymeric material. In still another embodiment, the barrier layer may comprise a nitride material layer. The inductor may further include a plating seed layer on the barrier layer and a conductive fill material abutting the plating seed layer.

公开(公告)号：US20240321657A1

公开(公告)日：2024-09-26

申请号：US18189782

申请日：2023-03-24

Applicant: Intel Corporation

Inventor： Darko Grujicic ,  Suddhasattwa Nad ,  Srinivas Pietambaram ,  Rengarajan Shanmugam ,  Marcel Wall ,  Sashi Kandanur ,  Rahul Manepalli ,  Robert May

IPC: H01L23/15 ,  H01L23/498

CPC classification number: H01L23/15 ,  H01L23/49827 ,  H01L23/49866 ,  G02B6/4214

Abstract: Photonic integrated circuit packages and methods of manufacturing are disclosed. An example integrated circuit package includes: a semiconductor die; a package substrate supporting the semiconductor die, the package substrate including a glass core, the glass core including a through glass via extending between opposing first and second surfaces of the glass core, the glass core including a recess spaced apart from the through glass via, the recess defined by a third surface of the glass core, the recess having a different shape than the through glass via; and a reflective metal disposed on the third surface to define a mirror, the reflective metal also disposed between a wall of the through glass via and a conductive material disposed in the through glass via.