公开(公告)号：EP2325695A4

公开(公告)日：2012-04-04

申请号：EP09813111

申请日：2009-09-10

Applicant: JSR CORP

Inventor： EBATA TAKUMA ,  NAKAGAWA HIROKI ,  MATSUDA YASUHIKO ,  KASAHARA KAZUKI ,  HOSHIKO KENJI ,  NAKASHIMA HIROMITSU ,  IKEDA NORIHIKO ,  SAKAI KAORI ,  HARADA SAKI

IPC: G03F7/039 ,  C08F20/26 ,  C08F20/28 ,  G03F7/004

CPC classification number: C08F20/28 ,  C08F220/18 ,  C08F220/28 ,  G03F7/0397 ,  G03F7/2041

Abstract: A radiation-sensitive resin composition includes (A) a polymer, (B) a photoacid generator, (C) an acid diffusion controller, and (D) a solvent, the polymer (A) including a repeating unit (a-1) shown by the following general formula (a-1), and the acid diffusion controller (C) including at least one base selected from (C-1) a base shown by the following general formula (C-1) and (C-2) a photodegradable base. wherein R 1 individually represent a hydrogen atom or the like, R represents a monovalent group shown by the above general formula (a'), R 19 represents a chain-like hydrocarbon group having 1 to 5 carbon atoms or the like, A represents a divalent chain-like hydrocarbon group having 1 to 30 carbon atoms or the like, m and n are integers from 0 to 3 (m+n=1 to 3), and R 2 and R 3 individually represent a monovalent chain-like hydrocarbon group having 1 to 20 carbon atoms or the like, provided that the two R 2 may bond to form a ring structure.

公开(公告)号：JP2010276624A

公开(公告)日：2010-12-09

申请号：JP2009115613

申请日：2009-05-12

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： HARADA SAKI ,  IKEDA NORIHIKO ,  UKO TOMOHIRO ,  NAKAJIMA HIROMITSU

IPC: G03F7/039 ,  C08F220/26 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition, having a large depth of focus and superior pattern peel-off resistance. SOLUTION: The radiation-sensitive resin composition includes (A) a polymer component, which at least includes a repeating unit expressed by general formula (1) and a repeating unit expressed by general formula (2), wherein the percentage of the repeating unit expressed by general formula (2) in the entire repeating units is 1 mol%-10 mol%; and (B) a radiation-sensitive acid-generating agent. In general formula (1), R 1 indicates a hydrogen atom, a methyl group or a trifluoromethyl group, and R 2 indicates a 1-4C straight chain or branching alkyl group or a 4-20C univalent alicyclic hydrocarbon group. R 3 s indicate a 1-4C straight chain or branching alkyl group or a 4-20C univalent alicyclic hydrocarbon group independently of each other, alternatively two R 3 s bond together to form a 4-20C bivalent alicyclic hydrocarbon group with carbon atoms bonded to each other. In general formula (2), R 1 indicates a hydrogen atom, a methyl group or a trifluoromethyl group, A indicates a 1-30C bivalent chain hydrocarbon group, a 3-30C bivalent alicyclic hydrocarbon group or a 6-30C bivalent aromatic hydrocarbon group, and X indicates a univalent group having a structure expressed by general formula (i). In the general formula (i), R 4 s indicate hydrogen atoms or 1-5C chain hydrocarbon groups, independently of each other, m indicates 1 or 2, and n indicates 1 or 2. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有大的聚焦深度和优异的图案剥离性的辐射敏感性树脂组合物。 解决方案：辐射敏感性树脂组合物包括（A）至少包含由通式（1）表示的重复单元和由通式（2）表示的重复单元）的聚合物组分，其中， 在整个重复单元中由通式（2）表示的重复单元为1摩尔％-10摩尔％ 和（B）辐射敏感的酸产生剂。 在通式（1）中，R 1 表示氢原子，甲基或三氟甲基，R“SP”2表示1-4C的直链或支链烷基 或4-20C一价脂环族烃基。 R“3”表示1-4C的直链或支链烷基或4-20C一价脂环族烃基彼此独立地，或者两个R 3共3个 形成具有彼此键合的碳原子的4-20C二价脂环族烃基。 在通式（2）中，R 1 表示氢原子，甲基或三氟甲基，A表示1-30C二价链烃基，3-30C二价脂环族烃基或 6-30C二价芳香族烃基，X表示具有通式（i）表示的结构的一价基团。 在通式（ⅰ）中，R“S”表示氢原子或1-5C链烃基，彼此独立地表示m表示1或2，n表示1或2。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2012155047A

公开(公告)日：2012-08-16

申请号：JP2011012571

申请日：2011-01-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NATSUME NORIHIRO ,  HARADA SAKI ,  KOBAYASHI SATORU ,  NAKANO TAKANORI

IPC: G03F7/039 ,  C08F12/24 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive composition capable of attaining a good pattern shape in lithography process for a high reflective substrate or a stepped substrate.SOLUTION: A radiation sensitive composition comprises: a polymer [A1] that includes a structural unit (HS1) derived from hydroxystyrene and a structural unit (a1) having a group represented by formula (a-1) and includes substantially no acid-dissociable group for producing an acidic functional group through dissociation caused by a function of an acid; and a polymer [A2] including a structural unit (HS2) derived from hydroxystyrene and the acid-dissociable group.

Abstract translation: 要解决的问题：提供一种能够在用于高反射性基板或阶梯式基板的光刻工艺中获得良好图案形状的辐射敏感组合物。 解决方案：辐射敏感组合物包括：包含由羟基苯乙烯衍生的结构单元（HS1）的聚合物[A1]和具有由式（a-1）表示的基团的结构单元（a1），并且基本上不含酸 用于通过由酸的功能引起的解离产生酸性官能团的相互关联基团; 和包含由羟基苯乙烯衍生的结构单元（HS2）和酸解离性基团的聚合物[A2]。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2010160346A

公开(公告)日：2010-07-22

申请号：JP2009002730

申请日：2009-01-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAJIMA HIROMITSU ,  IKEDA NORIHIKO ,  SAKAI KAORI ,  HARADA SAKI

IPC: G03F7/039 ,  C08F220/12 ,  C08F220/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which has a large depth of focus and ensures small LWR and MEEF, excellent pattern collapse resistance and excellent development defect control property.
SOLUTION: The radiation-sensitive resin composition includes: a polymer (A) having one or more repeating units represented by general formulae (1) and (2) and one or more repeating units (3) having a carbonate structure; and a radiation-sensitive acid generator (B).
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供具有大的聚焦深度并且确保小的LWR和MEEF的良好的抗折叠性和优异的显影缺陷控制性的辐射敏感性树脂组合物。 解决方案：辐射敏感性树脂组合物包括：具有一个或多个由通式（1）和（2）表示的重复单元的聚合物（A）和具有碳酸酯结构的一个或多个重复单元（3） 和辐射敏感酸产生剂（B）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2012098433A

公开(公告)日：2012-05-24

申请号：JP2010244996

申请日：2010-11-01

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： HARADA SAKI ,  YADA YUJI ,  NATSUME NORIHIRO ,  KIMURA TORU

IPC: G03F7/039 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resist pattern having an excellent shape, and a scum margin, using a substrate having steps.SOLUTION: A radiation sensitive composition includes a polymer component comprising: at least one of a hydroxystyrene structure and a repeating unit which becomes a hydroxystyrene structure by action of an acid from a photoacid generator; and at least one kind selected from repeating units represented by the following general formulas.

Abstract translation: 要解决的问题：使用具有步骤的基板来提供具有优异形状和浮渣边缘的抗蚀剂图案。 解决方案：辐射敏感组合物包括聚合物组分，其包含：羟基苯乙烯结构和重复单元中的至少一种，其通过来自光致酸产生剂的酸的作用成为羟基苯乙烯结构; 和选自由以下通式表示的重复单元中的至少一种。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2011195739A

公开(公告)日：2011-10-06

申请号：JP2010065107

申请日：2010-03-19

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAJIMA HIROMITSU ,  SUGIURA MAKOTO ,  UKO TOMOHIRO ,  OGATA YOICHI ,  HARADA SAKI

IPC: C08F220/26 ,  C08F2/00 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a method for polymerizing a polymer for a semiconductor resist where formation of extremely high molecular weight components which are liable to be a cause of defects is suppressed as much as possible in the method for polymerizing a polymer using a lactone skeleton-including (meth)acrylic compound as the monomer, and to provide a polymer for semiconductor resist obtained by the method.SOLUTION: The method for polymerizing the polymer for a semiconductor resist is such that: using a (meth)acrylic monomer (A) including the lactone skeleton and a monomer (B) not including the lactone skeleton as raw material monomers; a monomer solution (i) comprising the monomer (A) and the monomer (B) is added to a reaction system for over 30 minutes to polymerize; and after the lapse of 30 minutes or more from the start of the polymerization, a monomer solution (ii) comprising the monomer (A) is further added to the reaction system to continue polymerization.

Abstract translation: 要解决的问题：提供一种用于聚合半导体抗蚀剂聚合物的方法，其中在使用内酯聚合的聚合物的方法中尽可能地抑制易于引起缺陷的极高分子量组分的形成 骨架包含（甲基）丙烯酸化合物作为单体，并提供通过该方法获得的半导体抗蚀剂聚合物。解决方案：聚合半导体抗蚀剂用聚合物的方法是：使用（甲基）丙烯酸类单体（A ）和不包含内酯骨架的单体（B）作为原料单体; 将包含单体（A）和单体（B）的单体溶液（i）加入到反应体系中超过30分钟以进行聚合; 在从聚合开始经过30分钟以上之后，向反应体系中进一步添加包含单体（A）的单体溶液（ii），继续聚合。

公开(公告)号：JP2011075750A

公开(公告)日：2011-04-14

申请号：JP2009226078

申请日：2009-09-30

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IKEDA NORIHIKO ,  NAKAJIMA HIROMITSU ,  HARADA SAKI ,  NAKAHARA KAZUO

IPC: G03F7/039 ,  C08F20/26 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition having not only excellent sensitivity and resolution but also large depth of focus and excellent pattern peel-off resistance even on a substrate with high reflectivity. SOLUTION: The radiation sensitive resin composition for a chemically amplified resist is provided, which contains (A) a polymer having a repeating unit derived from a compound having a plurality of hydroxyl groups, such as glycerol monomethacrylate and (D) a solvent. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种不仅具有优异的灵敏度和分辨率，而且即使在具有高反射率的基板上也具有高焦深度和优异的图案剥离电阻的辐射敏感性树脂组合物。 解决方案：提供了一种用于化学增幅抗蚀剂的辐射敏感性树脂组合物，其包含（A）具有衍生自具有多个羟基的化合物的重复单元的聚合物，例如单甲基丙烯酸甘油酯和（D）溶剂 。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2014077147A

公开(公告)日：2014-05-01

申请号：JP2014011615

申请日：2014-01-24

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NAKAJIMA HIROMITSU ,  SUGIURA MAKOTO ,  UTAKA TOMOHIRO ,  OGATA YOICHI ,  HARADA SAKI

IPC: C08F220/28 ,  C08F2/00 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a polymerization method of a polymer for a semiconductor, in which generation of a component having an extremely high molecular weight that easily causes a defect is suppressed as much as possible in a polymerization method of a polymer using a lactone skeleton-containing (meth)acrylic compound as a monomer, and to provide a polymer for a semiconductor resist obtained by the method.SOLUTION: The polymerization method of a polymer for a semiconductor resist is carried out by using a (meth)acrylic monomer (A) having a lactone skeleton and a monomer (B) having no lactone skeleton, as raw material monomers. In the method, polymerization is carried out while adding a monomer solution (i) containing the above monomer (A) and the above monomer (B) to a reaction system for 30 minutes or more; and after 30 minutes or more have passed from the initiation of the polymerization, polymerization is carried out by further adding a monomer solution (ii) containing the monomer (A) to the reaction system.

Abstract translation: 要解决的问题：提供一种半导体用聚合物的聚合方法，其中在使用内酯的聚合物的聚合方法中尽可能地抑制容易引起缺陷的极高分子量的组分的产生 含有骨架的（甲基）丙烯酸类化合物作为单体，并提供通过该方法得到的半导体抗蚀剂用聚合物。溶胶：半导体抗蚀剂用聚合物的聚合方法是使用（甲基）丙烯酸系单体 A）和没有内酯骨架的单体（B）作为原料单体。 在该方法中，在将含有上述单体（A）和上述单体（B）的单体溶液（i）加入反应体系30分钟以上的同时进行聚合， 并且从聚合开始经过30分钟以上之后，通过向反应体系中进一步添加含有单体（A）的单体溶液（ii）进行聚合。

公开(公告)号：JP2012194292A

公开(公告)日：2012-10-11

申请号：JP2011057313

申请日：2011-03-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NATSUME NORIHIRO ,  HARADA SAKI ,  MARUYAMA KEN ,  NAKANO TAKANORI

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition having excellent nanoedge roughness suppressing properties and a focal depth.SOLUTION: The photoresist composition contains a polymer having a structural unit (I) represented by formula (1-1) and an acid generating agent represented by formula (2). In the formula (2), Ris an organic group having at least one ester bond and is represented by formula (2-1a).

Abstract translation: 要解决的问题：提供具有优异的纳米凹凸粗糙度抑制特性和焦深的光致抗蚀剂组合物。 光致抗蚀剂组合物含有具有由式（1-1）表示的结构单元（I）和由式（2）表示的酸产生剂的聚合物。 在式（2）中，R 1是具有至少一个酯键的有机基团，由式（2-1a）表示。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2010254960A

公开(公告)日：2010-11-11

申请号：JP2010042649

申请日：2010-02-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： IKEDA NORIHIKO ,  NAKAJIMA HIROMITSU ,  HARADA SAKI

IPC: C08F220/28 ,  C08F220/10 ,  G03F7/039

CPC classification number: C08F224/00 ,  C08F220/26 ,  C08F220/28 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition having a wide depth of focus and good resistance to pattern peeling. SOLUTION: A polymer includes a repeating unit at least represented by general formula (a-1), a repeating unit represented by general formula (a-2) and includes a GPC weight-average molecular weight ranging from about 1,000 to about 100,000, wherein in general formulae (a-1) and (a-2), R 0 represents an alkyl group having a hydroxy group, R 1 represents a hydrogen atom or the like, and R 2 and R 3 each represents an 1-4C alkyl group. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有广泛的聚焦深度和良好的抗图案剥离的辐射敏感性树脂组合物。 解决方案：聚合物包括至少由通式（a-1）表示的重复单元，由通式（a-2）表示的重复单元，并且包括约1,000至约1,000的GPC重均分子量 100,000，其中在通式（a-1）和（a-2）中，R“SP”表示具有羟基的烷基，R“SP”表示氢原子或 R SP＆gt;和＆lt; SP＆gt; 3＆lt; / SP＆gt;各自表示1-4C烷基。 版权所有（C）2011，JPO＆INPIT