Abstract:
A radiation curable composition which comprises (A) a hydrolyzate of a hydrolyzable silane compound represented by the general formula (1): (R1~)~p(R2~)~qSi(X)~4-p-q wherein R1 ~is a non-hydrolyzable organic group having 1 to 12 carbon atoms and containing a fluorine atom, R2 ~is a non- hydrolyzable organic group having 1 to 12 carbon atoms (except the one containing a fluorine atom), X is a hydrolyzable group, p is an integer of 1 or 2, and q is an integer of 0 or 1, or a condensate thereof, and (B) an age nt generating an acid by the irradiation with a light, and contains a silanol ( Si- OH) group in an amount of 0.1 to 0.5 relative to the total amount of bonding groups on the Si~s therein. The composition allows the formation of an optic al wave guide which is reduced in a waveguide loss with respect to lights havin g wave lengths of a wide range from a visible region to a near infrared region , and also is excellent in the resistance to cracking, characteristics of patterning by irradiation with a radiation, and the like.
Abstract:
A radiation-curable composition containing (A) hydrolyzates of hydrolyzable silane compounds represented by general formula (1): (R 1 ) p (R 2 ) q Si(X) 4-p-q (wherein R 1 is a non-hydrolyzable organic group having 1 to 12 carbon atoms that contains fluorine atoms, R 2 is a non-hydrolyzable organic group having 1 to 12 carbon atoms (but excluding ones that contain fluorine atoms), X is a hydrolyzable group, p is an integer of 1 or 2, and q is an integer of 0 or 1) and condensates of such hydrolyzates, and (B) a photo acid generator, wherein the ratio of silanol (Si-OH) groups in the composition is 0.1 to 0.5 out of all the bonding groups on Si. With such a composition, the waveguide loss is low for light having a wavelength in a broad range from the visible region to the near infrared region, and moreover the cracking resistance, the patterning ability upon irradiation with radiation, and so on are excellent.
Abstract:
An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of ±-position.
Abstract:
A radiation-sensitive resin composition that not only excels in fundamental properties as resist, such as sensitivity and resolution, but also with respect to both of line-and-space pattern and isolated space pattern, realizes extensive depth of focus (DOF) and is less in the line width change attributed to alteration of baking temperature, the limit line width free from any phenomenon of line pattern collapse of the radiation-sensitive resin composition being small. Further, there is provided a lactone copolymer being useful as a resin component of the radiation-sensitive resin composition. This lactone copolymer is represented by a copolymer of compound of the following formula (1-1), compound of the following formula (2-1) and compound of the following formula (3-1). This radiation-sensitive resin composition comprises the lactone copolymer (a) and radiation-sensitive acid generating agent (b).
Abstract:
A radiation curable composition which comprises (A) a hydrolyzate of a hydrolyzable silane compound represented by the general formula (1): (R1)p(R2)qSi(X)4-p-q wherein R1 is a non-hydrolyzable organic group having 1 to 12 carbon atoms and containing a fluorine atom, R2 is a non-hydrolyzable organic group having 1 to 12 carbon atoms (except the one containing a fluorine atom), X is a hydrolyzable group, p is an integer of 1 or 2, and q is an integer of 0 or 1, or a condensate thereof, and (B) an agent generating an acid by the irradiation with a light, and contains a silanol (Si-OH) group in an amount of 0.1 to 0.5 relative to the total amount of bonding groups on the Si’s therein. The composition allows the formation of an optical wave guide which is reduced in a waveguide loss with respect to lights having wave lengths of a wide range from a visible region to a near infrared region, and also is excellent in the resistance to cracking, characteristics of patterning by irradiation with a radiation, and the like.
Abstract:
The present invention relates to an electrode active material, an electrode and an electrical storage device. The electrode active material includes a carbon material and has not less than 0.020 mmol/g of basic functional groups.
Abstract:
Disclosed is an upper film-forming composition which enables to form a coating film on a photoresist without causing intermixing with the photoresist film and to maintain a stable coating film without dissolving into a medium used during immersion exposure. The upper film-forming composition is also capable to form an upper layer which enables to obtain a pattern shape that is not inferior to the one obtained by a process other than immersion exposure, namely a dry exposure and can be easily dissolved in an alkaline developer. Also disclosed is a copolymer containing a repeating unit having a group represented by the general formula (1) below, a repeating unit having a group represented by the general formula (2) below, at least one repeating unit (I) selected from repeating units having a carboxyl group, and a repeating unit (II) having a sulfo group, and having a weight average molecular weight of 2,000-100,000 determined by gel permeation chromatography. (1) (2) At least one of R
Abstract:
PROBLEM TO BE SOLVED: To provide a polymerization method of a polymer for a semiconductor, in which generation of a component having an extremely high molecular weight that easily causes a defect is suppressed as much as possible in a polymerization method of a polymer using a lactone skeleton-containing (meth)acrylic compound as a monomer, and to provide a polymer for a semiconductor resist obtained by the method.SOLUTION: The polymerization method of a polymer for a semiconductor resist is carried out by using a (meth)acrylic monomer (A) having a lactone skeleton and a monomer (B) having no lactone skeleton, as raw material monomers. In the method, polymerization is carried out while adding a monomer solution (i) containing the above monomer (A) and the above monomer (B) to a reaction system for 30 minutes or more; and after 30 minutes or more have passed from the initiation of the polymerization, polymerization is carried out by further adding a monomer solution (ii) containing the monomer (A) to the reaction system.