RADIATION CURABLE COMPOSITION, OPTICAL WAVEGUIDE AND METHOD OF FORMING THE OPTICAL WAVEGUIDE

    公开(公告)号:CA2488389A1

    公开(公告)日:2004-09-30

    申请号:CA2488389

    申请日:2003-10-20

    Applicant: JSR CORP

    Abstract: A radiation curable composition which comprises (A) a hydrolyzate of a hydrolyzable silane compound represented by the general formula (1): (R1~)~p(R2~)~qSi(X)~4-p-q wherein R1 ~is a non-hydrolyzable organic group having 1 to 12 carbon atoms and containing a fluorine atom, R2 ~is a non- hydrolyzable organic group having 1 to 12 carbon atoms (except the one containing a fluorine atom), X is a hydrolyzable group, p is an integer of 1 or 2, and q is an integer of 0 or 1, or a condensate thereof, and (B) an age nt generating an acid by the irradiation with a light, and contains a silanol ( Si- OH) group in an amount of 0.1 to 0.5 relative to the total amount of bonding groups on the Si~s therein. The composition allows the formation of an optic al wave guide which is reduced in a waveguide loss with respect to lights havin g wave lengths of a wide range from a visible region to a near infrared region , and also is excellent in the resistance to cracking, characteristics of patterning by irradiation with a radiation, and the like.

    RADIATION CURABLE COMPOSITION, OPTICAL WAVEGUIDE AND METHOD FOR FORMATION THEREOF

    公开(公告)号:AU2003273054A1

    公开(公告)日:2004-10-11

    申请号:AU2003273054

    申请日:2003-10-20

    Applicant: JSR CORP

    Abstract: A radiation-curable composition containing (A) hydrolyzates of hydrolyzable silane compounds represented by general formula (1): (R 1 ) p (R 2 ) q Si(X) 4-p-q (wherein R 1 is a non-hydrolyzable organic group having 1 to 12 carbon atoms that contains fluorine atoms, R 2 is a non-hydrolyzable organic group having 1 to 12 carbon atoms (but excluding ones that contain fluorine atoms), X is a hydrolyzable group, p is an integer of 1 or 2, and q is an integer of 0 or 1) and condensates of such hydrolyzates, and (B) a photo acid generator, wherein the ratio of silanol (Si-OH) groups in the composition is 0.1 to 0.5 out of all the bonding groups on Si. With such a composition, the waveguide loss is low for light having a wavelength in a broad range from the visible region to the near infrared region, and moreover the cracking resistance, the patterning ability upon irradiation with radiation, and so on are excellent.

    LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION
    5.
    发明公开
    LACTONE COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION 审中-公开
    LACTONCOPOLYMER和辐射敏感性树脂组合物

    公开(公告)号:EP1757628A4

    公开(公告)日:2008-04-30

    申请号:EP05737180

    申请日:2005-05-02

    Applicant: JSR CORP

    Abstract: A radiation-sensitive resin composition that not only excels in fundamental properties as resist, such as sensitivity and resolution, but also with respect to both of line-and-space pattern and isolated space pattern, realizes extensive depth of focus (DOF) and is less in the line width change attributed to alteration of baking temperature, the limit line width free from any phenomenon of line pattern collapse of the radiation-sensitive resin composition being small. Further, there is provided a lactone copolymer being useful as a resin component of the radiation-sensitive resin composition. This lactone copolymer is represented by a copolymer of compound of the following formula (1-1), compound of the following formula (2-1) and compound of the following formula (3-1). This radiation-sensitive resin composition comprises the lactone copolymer (a) and radiation-sensitive acid generating agent (b).

    COPOLYMER AND UPPER FILM-FORMING COMPOSITION
    8.
    发明公开
    COPOLYMER AND UPPER FILM-FORMING COMPOSITION 有权
    共聚物和上膜的组合物

    公开(公告)号:EP1806370A4

    公开(公告)日:2008-07-23

    申请号:EP05787854

    申请日:2005-09-28

    Applicant: JSR CORP

    Abstract: Disclosed is an upper film-forming composition which enables to form a coating film on a photoresist without causing intermixing with the photoresist film and to maintain a stable coating film without dissolving into a medium used during immersion exposure. The upper film-forming composition is also capable to form an upper layer which enables to obtain a pattern shape that is not inferior to the one obtained by a process other than immersion exposure, namely a dry exposure and can be easily dissolved in an alkaline developer. Also disclosed is a copolymer containing a repeating unit having a group represented by the general formula (1) below, a repeating unit having a group represented by the general formula (2) below, at least one repeating unit (I) selected from repeating units having a carboxyl group, and a repeating unit (II) having a sulfo group, and having a weight average molecular weight of 2,000-100,000 determined by gel permeation chromatography. (1) (2) At least one of R

    Polymerization method of polymer for semiconductor resist and polymer for semiconductor resist
    9.
    发明专利
    Polymerization method of polymer for semiconductor resist and polymer for semiconductor resist 审中-公开
    用于半导体电阻的聚合物和半导体电阻聚合物的聚合方法

    公开(公告)号:JP2014077147A

    公开(公告)日:2014-05-01

    申请号:JP2014011615

    申请日:2014-01-24

    Abstract: PROBLEM TO BE SOLVED: To provide a polymerization method of a polymer for a semiconductor, in which generation of a component having an extremely high molecular weight that easily causes a defect is suppressed as much as possible in a polymerization method of a polymer using a lactone skeleton-containing (meth)acrylic compound as a monomer, and to provide a polymer for a semiconductor resist obtained by the method.SOLUTION: The polymerization method of a polymer for a semiconductor resist is carried out by using a (meth)acrylic monomer (A) having a lactone skeleton and a monomer (B) having no lactone skeleton, as raw material monomers. In the method, polymerization is carried out while adding a monomer solution (i) containing the above monomer (A) and the above monomer (B) to a reaction system for 30 minutes or more; and after 30 minutes or more have passed from the initiation of the polymerization, polymerization is carried out by further adding a monomer solution (ii) containing the monomer (A) to the reaction system.

    Abstract translation: 要解决的问题:提供一种半导体用聚合物的聚合方法,其中在使用内酯的聚合物的聚合方法中尽可能地抑制容易引起缺陷的极高分子量的组分的产生 含有骨架的(甲基)丙烯酸类化合物作为单体,并提供通过该方法得到的半导体抗蚀剂用聚合物。溶胶:半导体抗蚀剂用聚合物的聚合方法是使用(甲基)丙烯酸系单体 A)和没有内酯骨架的单体(B)作为原料单体。 在该方法中,在将含有上述单体(A)和上述单体(B)的单体溶液(i)加入反应体系30分钟以上的同时进行聚合, 并且从聚合开始经过30分钟以上之后,通过向反应体系中进一步添加含有单体(A)的单体溶液(ii)进行聚合。

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