Abstract:
PROBLEM TO BE SOLVED: To provide a method of obtaining information in-situ regarding a film of a sample by using an eddy current probe, during a process for removing the film. SOLUTION: The eddy current probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy current probe. One or more first signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. A gain and/or distortion of a phase included in the first signals is calibrated based on the second signals. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes: a polishing table; a sample carrier arranged to hold the sample over the polishing table; and an eddy current probe. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method for illuminating a sample during a sample inspection, for example, for finding defects, and to provide an apparatus for the method. SOLUTION: The illumination apparatus includes optical fiber bundles with respective first ends and second ends in a certain aspect. The illumination apparatus further includes an illumination selector so as to output one or more selected incident beams from the second ends corresponding to one or more fibers, by selectively transmitting one or more incident beams to the first ends corresponding to one or more selected incident beams. The illumination apparatus includes a lens arrangement for receiving one or more selected incident beams selected from one or more second ends corresponding to the fibers to introduce the selected incident beams toward the sample. The lens arrangement and the fibers are constituted with respect to one another so that the imaging plane of the sample is imaged at a second end of the fiber. The incident beams are laser beam in an aspect. In a specific exemplary application, the sample is selected from the group consisting of a semiconductor device, a semiconductor wafer, and a semiconductor reticle. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.
Abstract:
A curved mirrored surface (78) is used to collect radiation scattered by a sample surface (76a) and originating from a normal illumination beam (70) and an oblique illumination beam (90). The collected radiation is focused to a detector (80). Scattered radiation originating from the normal and oblique illumination beams may be distinguished by employing radiation at two different wavelengths, by intentionally introducing an offset between the spots illuminated by the two beams or by switching the normal and oblique illumination beams (70, 90) on and off alternately. Beam position error caused by change in sample height may be corrected by detecting specular reflection of an oblique illumination beam and changing the direction of illumination in response thereto. Butterfly-shaped spatial filters may be used in conjunction with curved mirror radiation collectors 78 to restrict detection to certain azimuthal angles.
Abstract:
A curved mirrored surface (78) is used to collect radiation scattered by a sample surface (76a) and originating from a normal illumination beam (70) and an oblique illumination beam (90). The collected radiation is focused to a detector (80). Scattered radiation originating from the normal and oblique illumination beams may be distinguished by employing radiation at two different wavelengths, by intentionally introducing an offset between the spots illuminated by the two beams or by switching the normal and oblique illumination beams (70, 90) on and off alternately. Beam position error caused by change in sample height may be corrected by detecting specular reflection of an oblique illumination beam and changing the direction of illumination in response thereto. Butterfly-shaped spatial filters may be used in conjunction with curved mirror radiation collectors 78 to restrict detection to certain azimuthal angles.
Abstract:
Ein Inspektionssystem umfasst eine Beleuchtungsquelle zum Erzeugen eines Beleuchtungsstrahls, Fokussierungselemente zum Richten des Beleuchtungsstrahls auf eine Probe, einen Detektor, Sammelelemente zum Richten von von der Probe ausgehender Strahlung auf den Detektor, eine Detektionsmodus-Steuervorrichtung zum Abbilden der Probe in zwei oder mehr Erfassungsmodi, so dass der Detektor zwei oder mehr Sammelsignale basierend auf den zwei oder mehr Erfassungsmodi erzeugt, und einer Steuerung. Von der Probe ausgehende Strahlung umfasst mindestens von der Probe spiegelnd reflektierte Strahlung und von der Probe gestreute Strahlung. Die Steuereinrichtung bestimmt auf der Grundlage der zwei oder mehr Sammelsignale Defektstreueigenschaften, die mit durch Defekte auf der Probe gestreuter Strahlung verbunden sind. Die Steuerung klassifiziert auch das eine oder die mehreren Teilchen gemäß einem Satz vorbestimmter Defektklassifizierungen basierend auf dem einen oder den mehreren Defektstreueigenschaften.
Abstract:
A cylindrical mirror or lens is used to focus an input collimated beam of light onto a line on the surface to be inspected, where the line is substantially in the plane of incidence of the focused beam. An image of the beam is projected onto an array of charge-coupled devices parallel to the line for detecting anomalies and/or features of the surface, where the array is outside the plane of incidence of the focused beam.
Abstract:
A cylindrical mirror or lens is used to focus an input collimated beam of light onto a line on the surface to be inspected, where the line is substantially in the plane of incidence of the focused beam. An image of the beam is projected onto an array of charge-coupled devices parallel to the line for detecting anomalies and/or features of the surface, where the array is outside the plane of incidence of the focused beam.