-
公开(公告)号：JPH08116131A
公开(公告)日：1996-05-07
申请号：JP31531194
申请日：1994-12-19
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： BOKU KOUKUN , BOKU MINSHIYU , YU HEISHIYUU
Abstract: PURPOSE: To provide a method for manufacturing an upper surface emission microlaser where an electrode can be formed easily and a current can be injected more efficiently by forming an electrode on the side surface of a resonator that is a projecting structure. CONSTITUTION: A substrate, where a lower mirror layer 2, an active layer 3, and an upper mirror layer 4 are successively grown, is etched onto a compound semiconductor substrate, a metal is deposited on the entire surface of a projecting part in a recessed and projecting structure which is etched, and the metal and the active layer 3 are subjected to ion-beam etching, thus forming a side surface electrode 9. After that, a polyimide layer 10 is covered, until the recessed and projecting structure can be completely covered, one portion of the polyimide layer 10 is eliminated until one portion of the side electrode 9 is exposed, a wiring electrode 11 is wired to the side surface of the exposed side surface electrode 9, a photoresist film and a protected film that remains at the projecting part for discharging laser beams upward are successively eliminated, and the surface of the upper mirror layer 4 is released.
-
公开(公告)号：JPH0772516A
公开(公告)日：1995-03-17
申请号：JP16439594
申请日：1994-07-15
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KAN SENKEI , RI SHIYOUTAI , YU HEISHIYUU , TEI YASUMICHI , SAI EIKAN , BOKU HEIUN , RI KAZUTSUNE
Abstract: PURPOSE: To provide an ultra-high speed optical switching element which is operative at ordinary temp. and is capable of overcoming the threshold of switching of a several tens nanosecond band. CONSTITUTION: If incident light 4 passes a first multiple quantum well structure 1 changed in the properties of light by control light 3, transmitted light 5 is so changed as to have an increased light quantity by exposure development. When this light passes a second multiple quantum well structure 2, the exposure development by this second multiple quantum well structure 2 is increased by the exposure development by the changed light during the first several picoseconds and the quantity of the transmitted light 5 is eventually increased. Namely, the intensity of the transmitted light 5 increases in the short time band. On the other hand, the second MQWS acts as an absorber and the transmitted light quantity is increased during several picoseconds in the long time zone past the several picoseconds. The long time constant is offset by the second MWQS and an off-time is shortened.
-
Search Results
2
records
(took 0.02 seconds)
