-
公开(公告)号：SG10201406081QA
公开(公告)日：2015-04-29
申请号：SG10201406081Q
申请日：2014-09-25
Applicant: LAM RES CORP
Inventor： GUHA JOYDEEP , REDDY SIRISH K , CHATTOPADHYAY KAUSHIK , MOUNTSIER THOMAS W , EPPLER AARON , LILL THORSTEN , VAHEDI VAHID , SINGH HARMEET
Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.
Search Results
1
records
(took 0.02 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
