Method and apparatus for processing wafer surface using thin high-velocity fluid layer
    1.
    发明专利
    Method and apparatus for processing wafer surface using thin high-velocity fluid layer 有权
    使用薄型高速流体液层加工表面的方法和装置

    公开(公告)号:JP2005328039A

    公开(公告)日:2005-11-24

    申请号:JP2005100392

    申请日:2005-03-31

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface. SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题:提供一种减少污染的设备和方法,能够实现更低的成本,并且更充分地向晶片表面提供流体和从晶片表面去除流体。 解决方案:通过出口304提供的真空,将处理流体供应到晶片表面并几乎立即用晶片上的流体除去。处理流体被供应到晶片表面,使得处理流体存在于区域 在接近头部和晶片表面之间与晶片表面上的给定流体一会儿。 在该处理中,形成弯液面116,并且弯液面116的边界用作IPA /处理流体界面118.因此,弯月面116被供应到表面,并且实际上用作与给定流体一起去除的固定流 晶圆表面。 在干燥期间,流体几乎立即从晶片表面区域移除,从而在干燥期间在晶片表面区域中防止流体液滴的形成,并且晶片108上的污染概率降低。 版权所有(C)2006,JPO&NCIPI

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