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    METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    1.
    发明申请
    METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 审中-公开
    使用多个进入晶圆表面的入口和出口来干燥半导体晶片表面的方法和设备

    公开(公告)号：WO2004030052A2

    公开(公告)日：2004-04-08

    申请号：PCT/US0331136

    申请日：2003-09-30

    Applicant: LAM RES CORP

    Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

    IPC: H01L21/00

    CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034

    Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    Abstract translation: 提供了衬底制备系统的许多实施例之一，其包括具有头表面的头部，其中头部表面靠近衬底的表面。 该系统还包括用于通过头部将第一流体输送至基底表面的第一导管以及用于通过头部将第二流体输送至基底表面的第二导管，其中第二流体不同于第一流体 流体。 该系统还包括第三管道，用于从第一管道，第二管道和第三管道基本同时起作用的衬底表面去除第一流体和第二流体中的每一个。 在替代实施例中，提供了一种用于处理基板的方法，其包括在基板的表面上产生流体弯月面并且将声能施加到流体弯月面。 该方法还包括将流体弯月面移动到衬底的表面上以处理衬底的表面。

    METHODS OF FABRICATING A BARRIER LAYER WITH VARYING COMPOSITION FOR COPPER METALLIZATION
    4.
    发明申请
    METHODS OF FABRICATING A BARRIER LAYER WITH VARYING COMPOSITION FOR COPPER METALLIZATION 审中-公开
    用于铜冶金制造不同组成的障碍层的方法

    公开(公告)号：WO2008055007A3

    公开(公告)日：2008-07-03

    申请号：PCT/US2007081776

    申请日：2007-10-18

    Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ

    Inventor： YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ

    IPC: H01L21/20 ,  H01L21/36

    CPC classification number: H01L21/28562 ,  C23C16/029 ,  C23C16/34 ,  C23C16/45529 ,  H01L21/3141 ,  H01L21/318 ,  H01L21/76843 ,  H01L21/76846

    Abstract: Various embodiments provide improved processes and systems that produce a barrier layer with decreasing nitrogen concentration with the increase of film thickness. A barrier layer with decreasing nitrogen concentration with film thickness allows the end of barrier layer with high nitrogen concentration to have good adhesion with a dielectric layer and the end of barrier layer with low nitrogen concentration (or metal-rich) to have good adhesion with copper. An exemplary method of depositing a barrier layer on an interconnect structure is provided. The method includes (a) providing an atomic layer deposition environment, (b) depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic layer deposition environment. The method further includes (c) continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic layer deposition environment.

    Abstract translation: 各种实施方案提供改进的方法和系统，其随着膜厚度的增加产生具有降低的氮浓度的阻挡层。 具有降低氮浓度的膜厚度的阻挡层允许具有高氮浓度的阻挡层的端部与电介质层和低氮浓度（或富含金属）的阻挡层的端部具有良好的粘附性以与铜具有良好的粘合性 。 提供了在互连结构上沉积阻挡层的示例性方法。 该方法包括（a）提供原子层沉积环境，（b）在原子层沉积环境中的第一沉积阶段期间，在互连结构上沉积具有第一氮浓度的势垒层。 该方法还包括（c）在原子层沉积环境中的第二相沉积期间，继续在互连结构上以第二氮浓度沉积阻挡层。

    Self-draining edge wheel system and method
    5.
    发明专利
    Self-draining edge wheel system and method 审中-公开
    自排水边缘系统和方法

    公开(公告)号：JP2006032943A

    公开(公告)日：2006-02-02

    申请号：JP2005189324

    申请日：2005-06-29

    Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

    Inventor： GARCIA JAMES P ,  REDEKER FRITZ

    IPC: H01L21/304 ,  B08B3/00 ,  B08B3/04 ,  H01L21/00

    CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B11/02 ,  B08B2203/0229 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/68707

    Abstract: PROBLEM TO BE SOLVED: To provide a system and a method for preventing the transfer of accumulated fluid to semiconductor wafers during cleaning operations.
    SOLUTION: When a wafer 110 is supported by a plurality of self-draining edge wheels 120, any fluid contacting the edge wheels 120 is channeled away from the wafer 110 towards a bottom surface of each of the edge wheels 120. The channeling occurs by manufacturing the bottom portions of the edge wheels 120 to have different configurations. The different configurations enhance fluid channeling away from the wafer 110. To further prevent fluid from wetting a bottom surface of the edge wheels 120, an edge wheel dryer 140 can be positioned proximately adjacent to at least one edge wheel 120 to suction the fluid away from the bottom surface by using a vacuum channel of the edge wheel dryer 140.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种用于在清洁操作期间防止积聚的流体转移到半导体晶片的系统和方法。 解决方案：当晶片110由多个自引流边缘轮120支撑时，接触边缘轮120的任何流体被引导离开晶片110朝向每个边缘轮120的底表面。引导 通过制造边缘轮120的底部以具有不同的构造而发生。 不同的配置增强了远离晶片110的流体通道。为了进一步防止流体润湿边缘轮120的底部表面，边缘轮干燥器140可以被定位成邻近至少一个边缘轮120，以将流体从 通过使用边缘轮式干燥器140的真空通道来形成底面。版权所有（C）2006，JPO＆NCIPI

    Method and apparatus for processing wafer surface using thin high-velocity fluid layer
    6.
    发明专利
    Method and apparatus for processing wafer surface using thin high-velocity fluid layer 有权
    使用薄型高速流体液层加工表面的方法和装置

    公开(公告)号：JP2005328039A

    公开(公告)日：2005-11-24

    申请号：JP2005100392

    申请日：2005-03-31

    Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

    Inventor： RAVKIN MICHAEL ,  SMITH MICHAEL G R ,  DE LARIOS JOHN M ,  REDEKER FRITZ ,  KOROLIK MIKHAIL ,  DIPIETRO CHRISTIAN

    IPC: B08B3/00 ,  B08B3/04 ,  C25D5/08 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

    CPC classification number: H01L21/67051 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67063 ,  Y10S134/902

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and method for reducing contamination capable of achieving lower costs, and more sufficiently supplying and removing fluid to and from a wafer surface. SOLUTION: Processing fluid is supplied to the wafer surface and almost instantly removed with fluid on a wafer by a vacuum provided by an outlet 304. The processing fluid is supplied to the wafer surface such that the processing fluid is present in an area between a proximity head and the wafer surface for a moment with the given fluid on the wafer surface. In this processing, a meniscus 116 is formed and the boundary of the meniscus 116 acts as an IPA/processing fluid interface 118. Therefore, the meniscus 116 is supplied to the surface and practically acts as a fixed flow removed with the given fluid on the wafer surface. The fluid is almost instantly removed from the wafer surface area during drying, so that the formation of droplets of the fluid is prevented in the wafer surface area during drying and the probability of contamination on a wafer 108 is reduced. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种减少污染的设备和方法，能够实现更低的成本，并且更充分地向晶片表面提供流体和从晶片表面去除流体。 解决方案：通过出口304提供的真空，将处理流体供应到晶片表面并几乎立即用晶片上的流体除去。处理流体被供应到晶片表面，使得处理流体存在于区域 在接近头部和晶片表面之间与晶片表面上的给定流体一会儿。 在该处理中，形成弯液面116，并且弯液面116的边界用作IPA /处理流体界面118.因此，弯月面116被供应到表面，并且实际上用作与给定流体一起去除的固定流 晶圆表面。 在干燥期间，流体几乎立即从晶片表面区域移除，从而在干燥期间在晶片表面区域中防止流体液滴的形成，并且晶片108上的污染概率降低。 版权所有（C）2006，JPO＆NCIPI

    APPARATUS FOR CLEANING SUBSTRATE USING MEGASONIC POWER
    7.
    发明专利
    APPARATUS FOR CLEANING SUBSTRATE USING MEGASONIC POWER 未知

    公开(公告)号：IL190454A

    公开(公告)日：2011-12-29

    申请号：IL19045408

    申请日：2008-03-26

    Applicant: LAM RES CORP ,  LARIOS JOHN M DE ,  GARCIA JAMES P ,  WOODS CARL A ,  RAVKIN MICHAEL ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

    Inventor： LARIOS JOHN M DE ,  GARCIA JAMES P ,  WOODS CARL A ,  RAVKIN MICHAEL ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

    IPC: C25D5/22 ,  C25D7/12 ,  H01L21/00

    Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

    METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES
    8.
    发明专利
    METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR WAFER SURFACES USING A PLURALITY OF INLETS AND OUTLETS HELD IN CLOSE PROXIMITY TO THE WAFER SURFACES 未知

    公开(公告)号：AU2003277212A1

    公开(公告)日：2004-04-19

    申请号：AU2003277212

    申请日：2003-09-30

    Applicant: LAM RES CORP

    Inventor： WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN ,  LARIOS JOHN M DE ,  GARCIA JAMES P

    IPC: H01L21/00

    Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    CLEANING SOLUTION FORMULATIONS FOR SUBSTRATES
    9.
    发明专利
    CLEANING SOLUTION FORMULATIONS FOR SUBSTRATES 未知

    公开(公告)号：SG193861A1

    公开(公告)日：2013-10-30

    申请号：SG2013067202

    申请日：2009-09-03

    Applicant: LAM RES CORP

    Inventor： KOLICS ARTUR ,  REDEKER FRITZ

    Abstract: CLEANING SOLUTION FORMULATIONS FOR SUBSTRATESPresented is a cleaning solution according to one embodiment of the present invention that includes a corrosion inhibitor, a solubilizing agent, an oxygen scavenger, and a complexing agent also capable as a pH adjustor. Another embodiment of the present invention includes cleaning solutions that include a pH adjustor, an optional complexing agent, and a corrosion inhibitor. The cleaning solutions may have a solubilizing agent optionally present, may have a surfactant optionally present, and may have a dielectric etchant optionally present. Figure for publication: None

    10.
    发明专利
    未知

    公开(公告)号：AT556431T

    公开(公告)日：2012-05-15

    申请号：AT07007143

    申请日：2003-09-30

    Applicant: LAM RES CORP

    Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

    IPC: H01L21/67 ,  C25D5/22 ,  C25D7/12 ,  H01L21/00

    Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

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