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公开(公告)号:WO2012166727A3
公开(公告)日:2013-05-10
申请号:PCT/US2012039855
申请日:2012-05-29
Applicant: LAM RES CORP , SIRARD STEPHEN M , HYMES DIANE , SCHOEPP ALAN M
Inventor: SIRARD STEPHEN M , HYMES DIANE , SCHOEPP ALAN M
IPC: H01L21/302
CPC classification number: H01L21/02057 , H01L21/67034 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L21/6831
Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.
Abstract translation: 提供一种用于冷冻干燥基材的装置。 提供了用于接收基板的室。 用于支撑和静电夹持衬底的静电吸盘(ESC)在腔室内。 温度控制器控制静电卡盘的温度。 冷凝器连接到腔室。 真空泵与腔室流体连接。
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公开(公告)号:SG11202108294UA
公开(公告)日:2021-08-30
申请号:SG11202108294U
申请日:2020-01-28
Applicant: LAM RES CORP
Inventor: SIRARD STEPHEN M , LIMARY RATCHANA , PAN YANG , HYMES DIANE
Abstract: A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.
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公开(公告)号:SG2013075718A
公开(公告)日:2014-05-29
申请号:SG2013075718
申请日:2013-10-07
Applicant: LAM RES CORP
Inventor: SIRARD STEPHEN M , HYMES DIANE , SCHOEPP ALAN M , LIMARY RATCHANA
Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.
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公开(公告)号:AT397055T
公开(公告)日:2008-06-15
申请号:AT99907149
申请日:1999-02-18
Applicant: LAM RES CORP
Inventor: LI XU , ZHAO YUEXING , HYMES DIANE , DELARIOS JOHN
IPC: C09K13/00 , C11D1/00 , C09K13/02 , C09K13/04 , C09K13/06 , C09K13/08 , C11D3/02 , C11D7/02 , C11D7/04 , C11D7/08 , C11D7/26 , C11D11/00 , C23G1/10 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/3205 , H01L21/321
Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
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