公开(公告)号：WO2007005230A3

公开(公告)日：2007-04-26

申请号：PCT/US2006023354

申请日：2006-06-15

Applicant: LAM RES CORP ,  KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

IPC: H01L21/00 ,  C03B33/00 ,  H01L21/02 ,  H01L21/64 ,  H01L21/70

CPC classification number: H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes theresulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract translation: 压力保持在一定体积内，在该体积内半导体晶片所处的压力足以将前体流体的液态保持为非牛顿流体。 前体流体布置成接近待从半导体晶片移除的材料，同时保持前体流体处于液态。 压力在半导体晶片所处的体积内减小，使得体积内设置在晶片上的前体流体转变成非牛顿流体。 前体流体的膨胀和前体流体相对于晶片在转变成非牛顿流体期间的运动导致所产生的非牛顿流体从半导体晶片上去除材料。

公开(公告)号：EP1459363A4

公开(公告)日：2007-08-01

申请号：EP02797461

申请日：2002-12-20

Applicant: LAM RES CORP

Inventor： MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  DELARIOS JOHN

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/20 ,  H01L21/336

CPC classification number: H01L21/02063 ,  H01L21/67046 ,  H01L21/76814 ,  Y10S438/906

Abstract: A method for cleaning a semiconductor wafer is provided which includes plasma etching a feature into a low K dielectric layer having a photoresist mask where the plasma etching generates etch residues (Fig.4, 204). The method also includes ashing the semiconductor wafer to remove the photoresist mask where the ashing generating ashing residues (Fig.4, 206). The method further includes removing the etching residues and the ashing residues from the low K dielectric layer where the removing is enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent Fig.4, 208).

公开(公告)号：JP2005328038A

公开(公告)日：2005-11-24

申请号：JP2005096581

申请日：2005-03-30

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： MIKHAYLICHENKO KATRINA ,  DELARIOS JOHN

IPC: B05C5/00 ,  B05D1/18 ,  B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  C23C18/16 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC classification number: H01L21/67023 ,  B08B3/02 ,  C25D17/00 ,  C25D17/001 ,  C25D21/02 ,  H01L21/67028 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67063 ,  H01L21/6708 ,  H01L21/67109

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for heating fluid in the proximity head of a semiconductor wafer processing system.
SOLUTION: A fluid supply source 120 has a connected part 130 for guiding fluid to a proximity head 110. When the proximity head 110 receives the fluid, the fluid flows into a heating part 190. The heating part 190 heats the fluid to a set temperature. Further, the proximity head 110 performs heating or stands by until the fluid in the heating part 190 reaches the set temperature, so that the temperature of the fluid is controlled. When reaching the set temperature, the fluid passes through one or more outlet ports provided on the bottom of the proximity head 110. The fluid thus heated makes contact with the surface of a wafer 150 set by a wafer holder 140. The wafer holder 140 can support the wafer 150 in such a manner as to bring the wafer 150 close to the bottom of the proximity head 110.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于加热半导体晶片处理系统的接近头中的流体的方法和装置。 解决方案：流体供应源120具有用于将流体引导到邻近头部110的连接部分130.当邻近头部110接收流体时，流体流入加热部分190.加热部分190将流体加热至 设定温度。 此外，接近头部110进行加热或待机直到加热部件190中的流体达到设定温度，从而控制流体的温度。 当达到设定温度时，流体通过设置在邻近头部110的底部上的一个或多个出口。如此加热的流体与由晶片保持器140设置的晶片150的表面接触。晶片保持器140可以 以使得晶片150接近靠近头部110的底部的方式支撑晶片150.版权所有：（C）2006，JPO＆NCIPI

公开(公告)号：AT397055T

公开(公告)日：2008-06-15

申请号：AT99907149

申请日：1999-02-18

Applicant: LAM RES CORP

Inventor： LI XU ,  ZHAO YUEXING ,  HYMES DIANE ,  DELARIOS JOHN

IPC: C09K13/00 ,  C11D1/00 ,  C09K13/02 ,  C09K13/04 ,  C09K13/06 ,  C09K13/08 ,  C11D3/02 ,  C11D7/02 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

Abstract: A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

公开(公告)号：AU2002361829A1

公开(公告)日：2003-07-24

申请号：AU2002361829

申请日：2002-12-20

Applicant: LAM RES CORP

Inventor： MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  DELARIOS JOHN

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L21/20 ,  H01L21/336

Abstract: A method for cleaning a semiconductor wafer is provided which includes plasma etching a feature into a low K dielectric layer having a photoresist mask where the plasma etching generates etch residues. The method also includes ashing the semiconductor wafer to remove the photoresist mask where the ashing generating ashing residues. The method further includes removing the etching residues and the ashing residues from the low K dielectric layer where the removing is enhanced by scrubbing the low K dielectric layer of the semiconductor wafer with a wet brush that applies a fluid mixture including a cleaning chemistry and a wetting agent.

公开(公告)号：DE60237310D1

公开(公告)日：2010-09-23

申请号：DE60237310

申请日：2002-12-20

Applicant: LAM RES CORP

Inventor： MIKHAYLICHENKO KATRINA ,  RAVKIN MICHAEL ,  DELARIOS JOHN

IPC: H01L21/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/336 ,  H01L21/768

公开(公告)号：DE602005004321D1

公开(公告)日：2008-03-06

申请号：DE602005004321

申请日：2005-03-21

Applicant: LAM RES CORP

Inventor： MIKHAYLICHENKO KATRINA ,  DELARIOS JOHN

IPC: B05C5/00 ,  H01L21/00 ,  B05D1/18 ,  B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  C23C18/16 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/02 ,  H01L21/304 ,  H01L21/306

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer.

公开(公告)号：MY150143A

公开(公告)日：2013-11-29

申请号：MYPI20063116

申请日：2006-06-29

Applicant: LAM RES CORP

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

IPC: H01L21/00

Abstract: A PRESSURE IS MAINTAINED WITHIN A VOLUME WITHIN WHICH A SEMICONDUCTOR WAFER (101) RESIDES AT A PRESSURE THAT IS SUFFICIENT TO MAINTAIN A LIQUID STATE OF A PRECURSOR FLUID (301) TO A NON- NEWTONIAN FLUID (303). THE PRECURSOR FLUID IS DISPOSED PROXIMATE TO A MATERIAL (103B, 104) TO BE REMOVED FROM THE SEMICONDUCTOR WAFER (101) WHILE MAINTAINING THE PRECURSOR FLUID (301) IN THE LIQUID STATE. THE PRESSURE IS REDUCED IN THE VOLUME WITHIN WHICH THE SEMICONDUCTOR WAFER (101) RESIDES SUCH THAT THE PRECURSOR FLUID (301) DISPOSED ON THE WAFER WITHIN THE VOLUME IS TRANSFORMED INTO THE NON-NEWTONIAN FLUID (303). AN EXPANSION OF THE PRECURSOR FLUID (301) AND MOVEMENT OF THE PRECURSOR FLUID RELATIVE TO THE WAFER (101) DURING TRANSFORMATION INTO THE NON-NEWTONIAN FLUID (303) CAUSES THE RESULTING NON-NEWTONIAN FLUID TO REMOVE THE MATERIAL (103B, 104) FROM THE SEMICONDUCTOR WAFER (101).

公开(公告)号：SG166109A1

公开(公告)日：2010-11-29

申请号：SG2010071355

申请日：2006-06-15

Applicant: LAM RES CORP

Inventor： KOROLIK MIKHAIL ,  RAVKIN MICHAEL ,  DELARIOS JOHN ,  REDEKER FRITZ C ,  BOYD JOHN M

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non- Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non- Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer. Fig. 3B

公开(公告)号：DE602005004321T2

公开(公告)日：2008-12-24

申请号：DE602005004321

申请日：2005-03-21

Applicant: LAM RES CORP

Inventor： MIKHAYLICHENKO KATRINA ,  DELARIOS JOHN

IPC: B05C5/00 ,  H01L21/00 ,  B05D1/18 ,  B08B3/00 ,  B08B3/02 ,  B08B3/04 ,  C23C18/16 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  C25D21/02 ,  H01L21/304 ,  H01L21/306

Abstract: Provided is an apparatus and a method for heating fluid in a proximity head. A fluid source supplies fluid to a channel within the proximity head. The fluid flows in the channel, through the proximity head, to an outlet port located on a bottom surface of the proximity head. Further, within the proximity head is a heating portion that heats the fluid. Various methods can heat the fluid in the heating portion. For example, the fluid can be heated via resistive heating and heat exchange. However, any mechanism for heating fluid in the proximity head is possible. After heating the fluid, the proximity head delivers the heated fluid through the outlet port to a surface of a semiconductor wafer.