公开(公告)号：WO2010117964A3

公开(公告)日：2011-01-13

申请号：PCT/US2010030008

申请日：2010-04-05

Applicant: LAM RES CORP ,  JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERARDO A ,  YEN BI-MING

IPC: H01L21/3065 ,  H05H1/34

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/31138

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract translation: 通过本发明的实施例提供了一种用于蚀刻位于有机掩模下方的低k电介质层中的特征的方法。 通过有机掩模将特征蚀刻到低k电介质层中。 在低k电介质层上沉积氟碳层。 氟碳层被固化。 剥去有机面膜。

公开(公告)号：WO2011050171A4

公开(公告)日：2011-10-20

申请号：PCT/US2010053564

申请日：2010-10-21

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

Inventor： SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

Abstract translation: 提供了一种用有机化合物对硅基低k电介质层的损伤进行调谐修复的方法，其中损伤取代了附着于硅的羟基与硅连接的甲基。 提供前体气体，其包含表示为Si-（R）x（OR'）y的第一修复剂，其中y≥1并且x + y = 4，并且其中R是烷基或芳基，并且R'是 烷基或芳基和第二修复剂，表示为Si-（R）x（OR'）yR“，其中y≥1且x + y = 3，并且其中R是烷基或芳基，R'是烷基 或芳基，并且R“是降低湿清洁化学品和低k电介质之间的界面表面张力的基团。 第一修复剂和第二修复剂中的一些结合到低k电介质以形成第一修复剂和第二修复剂的单层。

公开(公告)号：WO2011050171A3

公开(公告)日：2011-09-01

申请号：PCT/US2010053564

申请日：2010-10-21

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

Inventor： SIRARD STEPHEN M ,  DEYOUNG JAMES ,  TURMEL ODETTE

IPC: H01L21/31

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si-(R)x(OR')y, where y?1 and x+y=4, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group and a second repair agent represented as Si-(R)x(OR')yR", where y?1 and x+y=3, and wherein R is an alkyl or aryl group and R' is an alkyl or aryl group, and R" is of a group that reduces interfacial surface tension between a wet clean chemical and the low-k dielectric. Some of the first repair agent and second repair agent are bonded to the low-k dielectric to form a monolayer of the first repair agent and the second repair agent.

公开(公告)号：WO2012166727A3

公开(公告)日：2013-05-10

申请号：PCT/US2012039855

申请日：2012-05-29

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  HYMES DIANE ,  SCHOEPP ALAN M

Inventor： SIRARD STEPHEN M ,  HYMES DIANE ,  SCHOEPP ALAN M

IPC: H01L21/302

CPC classification number: H01L21/02057 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/6831

Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.

Abstract translation: 提供一种用于冷冻干燥基材的装置。 提供了用于接收基板的室。 用于支撑和静电夹持衬底的静电吸盘（ESC）在腔室内。 温度控制器控制静电卡盘的温度。 冷凝器连接到腔室。 真空泵与腔室流体连接。

公开(公告)号：WO2011050062A3

公开(公告)日：2011-08-04

申请号：PCT/US2010053377

申请日：2010-10-20

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

Inventor： SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

IPC: H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

Abstract translation: 提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。 提供了包含CH 4气体的修复气体。 将修复气体形成为等离子体，同时保持低于50mTorr的压力。 与由修复气体形成的等离子体中的甲基取代成硅的羟基。

公开(公告)号：SG174500A1

公开(公告)日：2011-10-28

申请号：SG2011068251

申请日：2010-04-05

Applicant: LAM RES CORP

Inventor： JI BING ,  TAKESHITA KENJI ,  BAILEY ANDREW D III ,  HUDSON ERIC A ,  MORAVEJ MARYAM ,  SIRARD STEPHEN M ,  KO JUNGMIN ,  LE DANIEL ,  HEFTY ROBERT C ,  CHENG YU ,  DELGADINO GERATDO A ,  YEN BI-MING

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

公开(公告)号：SG10201406202TA

公开(公告)日：2014-11-27

申请号：SG10201406202T

申请日：2010-10-20

Applicant: LAM RES CORP

Inventor： SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

Abstract: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

公开(公告)号：SG11202108294UA

公开(公告)日：2021-08-30

申请号：SG11202108294U

申请日：2020-01-28

Applicant: LAM RES CORP

Inventor： SIRARD STEPHEN M ,  LIMARY RATCHANA ,  PAN YANG ,  HYMES DIANE

IPC: H01L21/56 ,  C09D5/16 ,  H01L21/02

Abstract: A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

公开(公告)号：SG2013075718A

公开(公告)日：2014-05-29

申请号：SG2013075718

申请日：2013-10-07

Applicant: LAM RES CORP

Inventor： SIRARD STEPHEN M ,  HYMES DIANE ,  SCHOEPP ALAN M ,  LIMARY RATCHANA

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.