公开(公告)号：WO2011031590A3

公开(公告)日：2011-06-30

申请号：PCT/US2010047382

申请日：2010-08-31

Applicant: LAM RES CORP ,  VALCURE JR JOHN C ,  ULLAL SAURABH ,  BYUN DANIEL ,  SANTOS ED ,  MAKHRATCHEV KONSTANTIN

Inventor： VALCURE JR JOHN C ,  ULLAL SAURABH ,  BYUN DANIEL ,  SANTOS ED ,  MAKHRATCHEV KONSTANTIN

IPC: H01L21/66 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/32091 ,  H01J37/32935

Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

Abstract translation: 一种用于优化解扣序列的方法，其包括从下电极去除衬底。 该方法包括执行初始分析以确定在解扣序列期间形成的等离子体的第一组电特性数据是否穿过阈值。 如果是这样，关闭惰性气体。 该方法还包括从下电极稍微升高升降器销，以向上移动基板。 该方法还包括执行机械和电气分析，其包括将包括提升器引脚施加的力的第一组机械数据与阈值进行比较。 机械和电气分析还包括将第二组电特性数据与阈值进行比较。 如果两者都穿过相应的阈值，则由于发生了衬底释放事件而从底部电极去除衬底。

公开(公告)号：WO2011014328A3

公开(公告)日：2011-05-05

申请号：PCT/US2010040284

申请日：2010-06-29

Applicant: LAM RES CORP ,  STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

IPC: H01L21/687 ,  B23Q3/15 ,  H02N13/00

CPC classification number: H01L21/68757 ,  H01J37/32541 ,  H01J37/3255 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

Abstract translation: 提供一种静电卡盘组件，其包括陶瓷接触层，图案化结合层，导电基板和地下电弧缓解层。 陶瓷接触层和导电基板协作以形成在静电卡盘组件的地下部分中形成的多个混合气体分配通道。 混合气体分配通道中的各个包括由导电基板呈现的相对高的导电性的表面和由陶瓷接触层呈现的相对低的电导率。 地下电弧缓解层包括相对较低电导率的层，并且形成在静电卡盘组件的地下部分中的混合气体分配通道的较高电导率表面上。 还提供了半导体晶片处理室。

公开(公告)号：EP2460179A4

公开(公告)日：2012-06-06

申请号：EP10804865

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

IPC: H01L21/687 ,  B23Q3/15 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/68757 ,  H01J37/32541 ,  H01J37/3255 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/6875

公开(公告)号：SG10201405047VA

公开(公告)日：2014-10-30

申请号：SG10201405047V

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： VALCURE JR JOHN C ,  ULLAL SAURABH ,  BYUN DANIEL ,  SANTOS ED ,  MAKHRATCHEV KONSTANTIN

Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

公开(公告)号：SG10201404264RA

公开(公告)日：2014-10-30

申请号：SG10201404264R

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.

公开(公告)号：SG178372A1

公开(公告)日：2012-03-29

申请号：SG2012009627

申请日：2010-08-31

Applicant: LAM RES CORP

Inventor： VALCURE JR JOHN C ,  ULLAL SAURABH ,  BYUN DANIEL ,  SANTOS ED ,  MAKHRATCHEV KONSTANTIN

Abstract: A method for optimizing a dechuck sequence, which includes removing a substrate from a lower electrode. The method includes performing an initial analysis to determine if a first set of electrical characteristic data of a plasma formed during the dechuck sequence traverses a threshold values. If so, turning off the inert gas. The method also includes raising the lifter pins slightly from the lower electrode to move the substrate in an upward direction. The method further includes performing a mechanical and electrical analysis, which includes comparing a first set of mechanical data, which includes an amount of force exerted by the lifter pins, against a threshold value. The mechanical and electrical analysis also includes comparing a second set of electrical characteristic data against a threshold value. If both traverse the respective threshold value, removes the substrate from the lower electrode since a substrate-released event has occurred.

公开(公告)号：SG177584A1

公开(公告)日：2012-02-28

申请号：SG2012001616

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.