SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM
    1.
    发明申请
    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM 审中-公开
    基于组件的管理技术在基板处理系统中的应用

    公开(公告)号:WO2008017050A3

    公开(公告)日:2008-10-30

    申请号:PCT/US2007075113

    申请日:2007-08-02

    Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

    Abstract translation: 公开了一种基板处理系统中的部件管理方法。 衬底处理系统具有一组组件,该组组件中的至少多个组件被指定为智能组件,多个组件的每个组件具有智能组件增强(ICE)。 该方法包括查询多个组件以从它们各自的ICE请求它们各自的唯一标识数据。 该方法还包括如果多个组件中的任何组件响应于查询,则从多个组件接收唯一的标识数据。 该方法另外包括:如果在预期第一组件识别数据时多个组件的第一组件不能提供第一组件唯一标识数据,则标记第一组件以用于校正动作。

    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM
    2.
    发明申请
    SMART COMPONENT-BASED MANAGEMENT TECHNIQUES IN A SUBSTRATE PROCESSING SYSTEM 审中-公开
    基于智能组件的基础处理系统管理技术

    公开(公告)号:WO2008017050A9

    公开(公告)日:2008-03-20

    申请号:PCT/US2007075113

    申请日:2007-08-02

    Abstract: A method of component management in a substrate processing system is disclosed. The substrate processing system has a set of components, at least a plurality of components of the set of components being designated to be smart components, each component of the plurality of components having an intelligent component enhancement (ICE). The method includes querying the plurality of components to request their respective unique identification data from their respective ICEs. The method further includes receiving unique identification data from the plurality of components if any of the plurality of components responds to the querying. The method additionally includes flagging the first component for corrective action if a first component of the plurality of components fails to provide first component unique identification data when the first component identification data is expected.

    Abstract translation: 公开了一种衬底处理系统中的部件管理方法。 衬底处理系统具有一组组件,该组组件中的至少多个组件被指定为智能组件,该多个组件中的每个组件具有智能组件增强(ICE)。 该方法包括查询多个组件以从它们各自的ICE请求它们各自的唯一标识数据。 该方法还包括如果多个组件中的任何组件响应于查询,则从多个组件接收唯一标识数据。 该方法还包括如果多个部件中的第一部件在预期第一部件识别数据时未能提供第一部件唯一识别数据,则标记第一部件以进行纠正动作。

    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY
    3.
    发明申请
    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY 审中-公开
    调节静电卡盘支撑组件热导率的方法

    公开(公告)号:WO2008027305A3

    公开(公告)日:2008-05-02

    申请号:PCT/US2007018711

    申请日:2007-08-24

    CPC classification number: H01L21/67248 H01L21/6831 Y10T279/23

    Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

    Abstract translation: 调节静电吸盘(ESC)支撑组件的热导率的方法包括测量支撑组件表面上的多个位置处的温度,其中每个位置与给定的电池相关联,根据测量结果确定区域中的任何分数减少 建议用于每个电池,并且根据建议的分数减少从每个电池内的支撑组件表面移除材料以降低该电池中的热导率。 材料去除可导致静电卡盘支撑组件在与支撑组件表面结合的静电卡盘的卡盘表面处的平衡温度均匀性的改善,或者可导致ESC支撑组件的平衡温度分布, 达到目标平衡温度曲线。 因此,热导率调整可以通过包括以下方法进行:限定单元结构;确定每个单元的目标面密度;以及去除材料的分数区域以实现该单元的目标面密度。 材料去除可以通过在X-Y台上进行钻孔,布线,激光加工或喷砂加工来实现。

    METHOD OF DETERMINING A TARGET MESA CONFIGURATION OF AN ELECTROSTATIC CHUCK
    6.
    发明申请
    METHOD OF DETERMINING A TARGET MESA CONFIGURATION OF AN ELECTROSTATIC CHUCK 审中-公开
    确定静电卡盘的目标MESA配置的方法

    公开(公告)号:WO2007064435A3

    公开(公告)日:2009-04-30

    申请号:PCT/US2006042577

    申请日:2006-11-01

    Inventor: STEGER ROBERT

    CPC classification number: H01L21/6875 H01L21/6831 Y10T29/49002

    Abstract: A method of modifying the heat transfer coefficient profile of an electrostatic chuck by configuring the areal density of a mesa configuration of an insulating layer of the chuck is provided. A method of modifying the capacitance profile of an electrostatic chuck by adjustment or initial fabrication of the height of a mesa configuration of an insulating layer of the chuck is further provided. The heat transfer coefficient at a given site can be measured by use of a heat flux probe, whereas the capacitance at a given site can be measured by use of a capacitance probe. The probes are placed on the insulating surface of the chuck and may include a plurality of mesas in a single measurement. A plurality of measurements made across the chuck provide a heat transfer coefficient profile or a capacitance profile, from which a target mesa areal density and a target mesa height are determined. The target density and height are achieved mechanically; the target density by mechanically adjusting the areal density of existing mesas; and the target height by creating or deepening low areas surrounding planned or existing mesas, respectively. This can be accomplished using any of known techniques for controlled material removal such as laser machining or grit blast machining on an X-Y table.

    Abstract translation: 提供了通过配置卡盘的绝缘层的台面构造的面密度来改变静电卡盘的传热系数分布的方法。 还提供了通过调整或初始制造卡盘绝缘层的台面构造的高度来改变静电卡盘的电容分布的方法。 可以通过使用热通量探针来测量给定部位的传热系数,而可以通过使用电容探针来测量给定部位的电容。 探针被放置在卡盘的绝缘表面上,并且可以在单个测量中包括多个台面。 在卡盘上进行的多次测量提供传热系数分布或电容分布,从中确定目标台面面积密度和目标台面高度。 目标密度和高度机械地实现; 目标密度通过机械调节现有台面的面密度; 并分别通过创造或加深围绕计划的或现有台面的低地区来实现目标的高度。 这可以使用用于控制材料去除的已知技术来实现,例如在X-Y工作台上的激光加工或喷砂加工。

    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY
    7.
    发明申请
    METHOD OF TUNING THERMAL CONDUCTIVITY OF ELECTROSTATIC CHUCK SUPPORT ASSEMPLY 审中-公开
    调节静电栓支持热导率的方法

    公开(公告)号:WO2008027305A2

    公开(公告)日:2008-03-06

    申请号:PCT/US2007018711

    申请日:2007-08-24

    CPC classification number: H01L21/67248 H01L21/6831 Y10T279/23

    Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile. Thermal conductivity tuning can thus take place by a method comprising defining a cell structure, determining the target areal density of each cell and removing a fractional area of material to achieve the target areal density for that cell. Material removal can be effected by drilling, routing, laser machining or grit blast machining on an X-Y table.

    Abstract translation: 调整静电卡盘(ESC)支撑组件的导热性的方法包括测量支撑组件表面上的多个位置处的温度,其中每个部位与给定的电池相关联,从测量中确定任何部分面积的减小 建议每个电池,并根据建议的分数还原从每个电池中的支撑组件表面去除材料,以降低该电池中的热导率。 材料去除可以改善静电卡盘支撑组件在与支撑组件表面接合的静电卡盘的卡盘表面处的平衡温度均匀性,或者可以导致ESC支撑组件的平衡温度分布接近或接近 达到目标平衡温度曲线。 因此,热导率调节可以通过包括限定单元结构,确定每个单元的目标面积密度和去除材料的分数区域以实现该单元的目标面积密度的方法发生。 通过在X-Y台上进行钻孔,布线,激光加工或砂粒加工可以实现材料去除。

    SYSTEM AND METHOD FOR INTEGRATED MULTI-USE OPTICAL ALIGNMENT
    8.
    发明申请
    SYSTEM AND METHOD FOR INTEGRATED MULTI-USE OPTICAL ALIGNMENT 审中-公开
    用于集成多用途光学对准的系统和方法

    公开(公告)号:WO2005028994A3

    公开(公告)日:2005-05-19

    申请号:PCT/US2004025517

    申请日:2004-08-05

    CPC classification number: G01C1/00 H01J2237/30438 H01L21/681

    Abstract: An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector in included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.

    Abstract translation: 提供了一种用于半导体处理系统的光学对准系统。 该光学对准系统包括晶片卡盘,该晶片卡盘具有集成在晶片卡盘的顶表面中的对准特征。 另外,能够将光信号发射到对准特征上的光束形成系统设置在晶片卡盘上方。 另外,包括的检测器可以检测发射到对准特征上的光信号的幅度。 在一个方面,对准特征可以是将光信号的一部分反射回光束检测器的反射对准特征。 在另外的方面中,对准特征可以是能够允许一部分光信号通过晶片卡盘到达检测器的透射比对特征。 在这方面,检测器可以设置在晶片卡盘下方。

    Method and apparatus for controlling spatial temperature distribution across surface of workpiece support
    9.
    发明专利
    Method and apparatus for controlling spatial temperature distribution across surface of workpiece support 有权
    用于控制工件支撑表面空间温度分布的方法和装置

    公开(公告)号:JP2009200529A

    公开(公告)日:2009-09-03

    申请号:JP2009136934

    申请日:2009-06-08

    CPC classification number: H01L21/67248 H01J2237/2001 H01L21/67103

    Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for controlling the temperature of a semiconductor wafer during reactive ion etching without needing large plasma heat flux. SOLUTION: A chuck for a plasma processing machine comprises a temperature-controlled base (302), a thermal insulator (304), a flat support (306), and a heater (308). The temperature-controlled base has a temperature below a desired temperature of a workpiece (310). The thermal insulator is disposed over the temperature-controlled base. The flat support is disposed on the thermal insulator. The flat support holds a workpiece. The heater is embedded within the flat support and/or disposed on an undersurface of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied to each heating element and/or temperature of each heating element is controlled independently. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种用于在反应离子蚀刻期间控制半导体晶片的温度而不需要大的等离子体热通量的方法和装置。 解决方案:用于等离子体处理机的卡盘包括温度控制的基座(302),绝热体(304),平坦的支撑件(306)和加热器(308)。 温度控制的基座具有低于工件(310)的期望温度的温度。 热绝缘体设置在温度控制的基座上。 平坦的支撑件设置在绝热体上。 平面支撑件保持工件。 加热器嵌入在平坦支撑件内和/或设置在平坦支撑件的下表面上。 加热器包括多个加热元件,其加热多个相应的加热区。 提供给每个加热元件的功率和/或每个加热元件的温度被独立地控制。 版权所有(C)2009,JPO&INPIT

    10.
    发明专利
    未知

    公开(公告)号:AT480003T

    公开(公告)日:2010-09-15

    申请号:AT04710651

    申请日:2004-02-12

    Applicant: LAM RES CORP

    Inventor: STEGER ROBERT

    Abstract: A wafer etching system has a measuring device, an etching chamber, and a controller. The measuring device measures the critical dimension test feature (CD) along the profile of the wafer at a number of preset locations. The etching chamber receives the wafer from the measuring device. The etching chamber includes a chuck supporting the wafer and a number of heating elements disposed within the chuck. Each heating element is positioned adjacent to one of the preset locations on the wafer. The controller is coupled to the measuring device to receive the actual measured CD's for a particular wafer. The controller is also coupled to control the heating elements. The controller adjusts the temperature of the heating elements during a process to reduce so as the variation of critical dimensions measured at the preset locations.

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