公开(公告)号：JPH11191649A

公开(公告)日：1999-07-13

申请号：JP29666498

申请日：1998-10-19

Applicant: LUCENT TECHNOLOGIES INC

Inventor： ADAMS LAURA ELLEN ,  BETHEA CLYDE GEORGE ,  FANG WEI-CHIAO ,  NYKOLAK GERALD ,  PEOPLE ROOSEVELT ,  SERGENT ARTHUR M ,  TANBUN-EK TAWEE ,  TSANG WON-TIEN

IPC: H01S3/10 ,  H01S5/0625 ,  H01S5/10

Abstract: PROBLEM TO BE SOLVED: To provide a broad band adjustable laser, which generates optical output signal corresponding such as to the wavelength of a wavelength division multiplexing (WDM) system, N-pieces of channels, with any one of the N-pieces of different axial modes. SOLUTION: An adjustable semiconductor laser has a gain region 12 having an MGW active region 12.1, grating DFB regions 12.2 of a uniform pitch and a first waveguide 12.3. A cavity resonance is formed of a composite reflecting region 14, which has a second MQW region 14.1 and a second waveguide 14.3, and the regions 12.2. Due to the voltage applied to this region 14, a quantum confining Stark effect is caused and as a result, the wavelength of the laser is changed.

公开(公告)号：JP2002158404A

公开(公告)日：2002-05-31

申请号：JP2001201723

申请日：2001-07-03

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  YI CHO ALFRED ,  CHU SUNG-NEE GEORGE ,  GMACHL CLAIRE F ,  HUTCHINSON ALBERT LEE ,  SERGENT ARTHUR M ,  SIVCO DEBORAH LEE ,  TREDICUCCI ALESSANDRO ,  MICHAEL CLEMONT WANK

IPC: H01S5/343 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To provide an ISB(inter-subband) SL(superlattice) emitter which comprises an almost flat mini band as well as a wave function which is spatially symmetric, and permits independent control of an applied electric field, derred operating wavelength, shape of the wave function, and energy position of the remaining state the mini band. SOLUTION: An RT region of an ISP optical emitter 10 comprises a pre-bias SL, and a plurality of split quantum wells (SPQWs). Here, the SPQW is a quantum well which is divided into a plurality of sub-wells by at least one barrier layer which is so thin that the energy state on upper side and lower side is separated over its natural width, to contribute to different mini bands in respective RT regions. On the contrary, the adjoining SPQWs are jointed each other by another barrier layer of such thickness as the mini band is generated across the RT regions.

公开(公告)号：JP2002076516A

公开(公告)日：2002-03-15

申请号：JP2001205754

申请日：2001-07-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHI CLAIRE F ,  HUTCHINSON ALBERT LEE ,  HWANG HAROLD YOONSUNG ,  PAIELLA ROBERTO ,  SERGENT ARTHUR M ,  SIVCO DEBORAH LEE ,  ALESSANDRO TOREDIKUCCHI

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To provide ability for finely controlling a central wavelength through waveguide coating without introducing a loss or non-linear refraction factor significant for dielectric materials or waveguide process having a low absorption rate within an intermediate IR range, and having high insulation durability for enabling high-power/high-temperature operation in ISB laser technology, through low loss mesa dielectric coating for providing efficient heat conduction through the side wall of mesa, by laterally sealing light without increasing threshold current density for lasing and further through low loss coating on a comparatively narrow mesa. SOLUTION: In a mesa structure semiconductor laser 10, a stripe structure contact 18 is specified on the top of the mesa, and patterned dielectric coating to be used for providing significant waveguide property contains chalcogenide glass 16. Especially, the application to an inter-sub-band (quantum cascade, for example,) is described.