公开(公告)号：JPH11284287A

公开(公告)日：1999-10-15

申请号：JP31153598

申请日：1998-11-02

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED Y ,  FAIST JEROME ,  HUTCHINSON ALBERT LEE ,  SIRTORI CARLO ,  SIVCO DEBORAH LEE ,  ALESSANDRO TOREDIKUCCHI

IPC: H01L33/06 ,  H01S5/00 ,  H01S5/34 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a device for mounting a double wavelength quantum cascade photon source. SOLUTION: A quantum cascade(QC) photon source has two different wavelengths which are both medium infrared rays normally which can be released at the same time. This can be realized by a structure of semiconductor layers in which electrons are injected into an energy level E3 and then are forcefully cascade connected to an inter medium level E2 before they reach a ground state E1 in an operation area. In these operations, photons of energy E3 -E2 (wavelength λ1 ) and E2 -E1 (wavelength λ2 ) are released. The double wavelength photon source according to the present invention can be used for various purposes, for example, for determining absorption amount of gas sample at wavelengths λ1 and λ2 and generally for determining density of a specified chemical compound in a sample.

公开(公告)号：JP2002076516A

公开(公告)日：2002-03-15

申请号：JP2001205754

申请日：2001-07-06

Applicant: LUCENT TECHNOLOGIES INC

Inventor： BAILLARGEON JAMES NELSON ,  CAPASSO FEDERICO ,  CHO ALFRED Y ,  GMACHI CLAIRE F ,  HUTCHINSON ALBERT LEE ,  HWANG HAROLD YOONSUNG ,  PAIELLA ROBERTO ,  SERGENT ARTHUR M ,  SIVCO DEBORAH LEE ,  ALESSANDRO TOREDIKUCCHI

IPC: H01S5/10 ,  H01S5/12 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To provide ability for finely controlling a central wavelength through waveguide coating without introducing a loss or non-linear refraction factor significant for dielectric materials or waveguide process having a low absorption rate within an intermediate IR range, and having high insulation durability for enabling high-power/high-temperature operation in ISB laser technology, through low loss mesa dielectric coating for providing efficient heat conduction through the side wall of mesa, by laterally sealing light without increasing threshold current density for lasing and further through low loss coating on a comparatively narrow mesa. SOLUTION: In a mesa structure semiconductor laser 10, a stripe structure contact 18 is specified on the top of the mesa, and patterned dielectric coating to be used for providing significant waveguide property contains chalcogenide glass 16. Especially, the application to an inter-sub-band (quantum cascade, for example,) is described.

公开(公告)号：JP2001244559A

公开(公告)日：2001-09-07

申请号：JP2000324946

申请日：2000-10-25

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CAPASSO FEDERICO ,  CHO ALFRED YI ,  CHU SUNG-NEE GEORGE ,  GMACHL CLAIRE F ,  KOEHLER RUEDEGER ,  SIVCO DEBORAH LEE ,  ALESSANDRO TOREDIKUCCHI

IPC: H01S5/125 ,  H01S5/042 ,  H01S5/10 ,  H01S5/12 ,  H01S5/34

Abstract: PROBLEM TO BE SOLVED: To offer an article comprising QC-DFB laser. SOLUTION: In the QC-DFB laser, an overlying grating structure achieves relatively strong coupling of the guided mode to the grating. The grating structure includes grooves etched in a plasmon-enhanced confinement layer(PECL) disposed adjacent and in contact with an upper metallic electrode. The grating structure and the PECL are designed such that in the grooves, the laser mode travelling in the waveguide can couple efficiently to the surface-plasmon at the electrode interface. This results in strong modulation of the laser mode, leading to strong modulation of, inter alia, effective refractive index.