公开(公告)号：JP2000294554A

公开(公告)日：2000-10-20

申请号：JP2000066646

申请日：2000-03-10

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  DROOPAD RAVINDRANATH ,  OVERGAARD COREY DANIEL ,  RAMDANI JAMAL ,  CURLESS JAY A ,  HALLMARK JERALD ALLEN ,  OOMS WILLIAM J ,  WANG JUN

IPC: H01L41/24 ,  C30B23/02 ,  C30B25/02 ,  H01L21/203 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide the manufacture of a thin stable crystalline interface to silicon. SOLUTION: This method is for manufacturing of a semiconductor substrate by preparing a silicon substrate 10 having a surface, and forming interface 14 consisting of silicon, oxygen, and a metal on the surface of the silicon substrate, and forming one or more single crystalline oxide layer on the interface 14. This interface consists of the atomic layer of silicon oxygen, and a metal expressed by the formula XSiO2, where X represents a metal.

公开(公告)号：JP2000294553A

公开(公告)日：2000-10-20

申请号：JP2000065098

申请日：2000-03-09

Applicant: MOTOROLA INC

Inventor： WANG JUN ,  OOMS WILLIAM J ,  HALLMARK JERALD ALLEN

IPC: H01L21/316 ,  C30B23/02 ,  C30B25/02 ,  H01L21/203 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a thin stable crystalline interface to silicon. SOLUTION: Semiconductor structure is equipped with a silicon substrate 10, one or more single crystalline oxide layers 26, and interface 14 between the silicon substrate and the one or more single crystalline oxide layers. The interface consists of an atomic layer of crystalline material suitable for the lattice constant of silicon. This interface has a composition of XSiO2 (X is a metal) and consists of oxygen and metal.

公开(公告)号：SG101424A1

公开(公告)日：2004-01-30

申请号：SG200003969

申请日：2000-07-17

Applicant: MOTOROLA INC

Inventor： WANG JUN ,  OOMS WILLIAM JAY ,  HALLMARK JERALD ALLEN

IPC: C23C14/08 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/20 ,  H01L29/20