Abstract:
Silicon nanoparticle inks provide a basis for the formation of desirable materials. Specifically, composites have been formed in thin layers comprising silicon nanoparticles embedded in an amorphous silicon matrix, which can be formed at relatively low temperatures. The composite material can be heated to form a nanocrystalline material having crystals that are non-rod shaped. The nanocrystalline material can have desirable electrical conductive properties, and the materials can be formed with a high dopant level. Also, nanocrystalline silicon pellets can be formed from silicon nanoparticles deposited form an ink in which the pellets can be relatively dense although less dense than bulk silicon. The pellets can be formed from the application of pressure and heat to a silicon nanoparticle layer.
Abstract:
Submicron powders of metal silicon nitrides and metal silicon oxynitrides are synthesized using nanoscale particles of one or more precursor materials using a solid state reaction. For example, nanoscale powders of silicon nitride are useful precursor powders for the synthesis of metal silicon nitride and metal silicon oxynitride submicron powders. Due to the use of the nanoscale precursor materials for the synthesis of the submicron phosphor powders, the product phosphors can have very high internal quantum efficiencies. The phosphor powders can comprise a suitable dopant activator, such as a rare earth metal element dopant.
Abstract:
Thin semiconductor foils can be formed using light reactive deposition. These foils can have an average thickness of less than 100 microns. In some embodiments, the semiconductor foils can have a large surface area, such as greater than about 900 square centimeters. The foil can be free standing or releasably held on one surface. The semiconductor foil can comprise elemental silicon, elemental germanium, silicon carbide, doped forms thereof, alloys thereof or mixtures thereof. The foils can be formed using a release layer that can release the foil after its deposition. The foils can be patterned, cut and processed in other ways for the formation of devices. Suitable devices that can be formed form the foils include, for example, photovoltaic modules and display control circuits.
Abstract:
Desirable composites of polysiloxane polymers and inorganic nanoparticles can be formed based on the appropriate selection of the surface properties of the particles and the chemical properties of the polymer. High loadings of particles can be achieved with good dispersion through the polymer. The composites can have good optical properties. In some embodiments, the inorganic particles are substantially free of surface modification.
Abstract:
Collections of phosphor particles have achieved improved performance based on improved material properties, such as crystallinity. Display devices can be formed with these improved submicron phosphor particles. Improved processing methods contribute to the improved phosphor particles, which can have high crystallinity and a high degree of particle size uniformity. Dispersions and composites can be effectively formed from the powders of the submicron particle collections.
Abstract:
Silicon based nanoparticle inks are formulated with viscous polycyclic alcohols to control the rheology of the inks. The inks can be formulated into pastes with non-Newtonian rheology and good screen printing properties. The inks can have low metal contamination such that they are suitable for forming semiconductor structures. The silicon based nanoparticles can be elemental silicon particles with or without dopant.
Abstract:
High quality silicon inks are used to form polycrystalline layers within thin film solar cells having a p-n junction. The particles deposited with the inks can be sintered to form the silicon film, which can be intrinsic films or doped films. The silicon inks can have a z- average secondary particle size of no more than about 250 nm as determined by dynamic light scattering on an ink sample diluted to 0.4 weight percent if initially having a greater concentration. In some embodiments, an intrinsic layer can be a composite of an amorphous silicon portion and a crystalline silicon portion.
Abstract:
Highly uniform silicon/germanium nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silicon/germanium particles can be surface modified to form the dispersions. The silicon/germanium nanoparticles can be doped to change the particle properties. The dispersions can be printed as an ink for appropriate/ applications. The dispersions can be used to form selectively doped deposits of semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.
Abstract:
Methods for forming coated substrates can be based on depositing material from a flow onto a substrate in which the coating material is formed by a reaction within the flow. In some embodiments, the product materials are formed in a reaction driven by photon energy absorbed from a radiation beam. In additional or alternative embodiments, the flow with the product stream is directed at the substrate. The substrate may be moved relative to the flow. Coating materials can be formed with densities of 65 percent to 95 percent of the fully densified coating material with a very high level of coating uniformity.
Abstract:
Improved silicon/germanium nanoparticle inks are described that have silicon/ germanium nanoparticles well distributed within a stable dispersion. In particular the inks are formulated with a centrifugation step to remove contaminants as well as less well dispersed portions of the dispersion. A sonication step can be used after the centrifugation, which is observed to result in a synergistic improvement to the quality of some of the inks. The silicon/germanium ink properties can be engineered for particular deposition applications, such as spin coating or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon/germanium nanoparticles. The silicon/germanium nanoparticles are well suited for forming semiconductor components, such as components for thin film transistors or solar cell contacts.