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    BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES
    2.
    发明申请
    BACK CONTACT SOLAR CELLS WITH EFFECTIVE AND EFFICIENT DESIGNS AND CORRESPONDING PATTERNING PROCESSES 审中-公开
    返回联系有效和有效的设计和相关方案的太阳能电池

    公开(公告)号：WO2010135153A2

    公开(公告)日：2010-11-25

    申请号：PCT/US2010/034762

    申请日：2010-05-13

    Applicant: NANOGRAM CORPORATION ,  SRINIVASAN, Uma ,  ZHOU, Xin ,  HIESLMAIR, Henry ,  PAKALA, Neeraj

    Inventor： SRINIVASAN, Uma ,  ZHOU, Xin ,  HIESLMAIR, Henry ,  PAKALA, Neeraj

    IPC: H01L31/042

    CPC classification number: H01L21/22 ,  H01L21/2255 ,  H01L21/228 ,  H01L21/268 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

    Abstract: Laser based processes are used alone or in combination to effectively process doped domains for semiconductors and/or current harvesting structures. For example, dopants can be driven into a silicon/germanium semiconductor layer from a bare silicon/ germanium surface using a laser beam. Deep contacts have been found to be effective for producing efficient solar cells. Dielectric layers can be effectively patterned to provide for selected contact between the current collectors and the doped domains along the semiconductor surface. Rapid processing approaches are suitable for efficient production processes.

    Abstract translation: 基于激光的工艺单独使用或组合使用以有效地处理半导体和/或当前采集结构的掺杂域。 例如，掺杂剂可以使用激光束从裸硅/锗表面驱动到硅/锗半导体层中。 已经发现深层接触对于生产高效太阳能电池是有效的。 电介质层可以被有效地构图以提供集电器和沿着半导体表面的掺杂区域之间的选择的接触。 快速处理方法适用于高效的生产工艺。

    SILICON/GERMANIUM NANOPARTICLE INKS AND METHODS OF FORMING INKS WITH DESIRED PRINTING PROPERTIES
    3.
    发明申请
    SILICON/GERMANIUM NANOPARTICLE INKS AND METHODS OF FORMING INKS WITH DESIRED PRINTING PROPERTIES 审中-公开
    硅/锗纳米油墨和形成具有所需印刷性能的墨水的方法

    公开(公告)号：WO2013109399A1

    公开(公告)日：2013-07-25

    申请号：PCT/US2012/071951

    申请日：2012-12-28

    Applicant: NANOGRAM CORPORATION

    Inventor： LI, Weidong ,  PENGRA-LEUNG, Gina, Elizabeth ,  SRINIVASAN, Uma ,  CHIRUVOLU, Shivkumar ,  SOEDA, Masaya ,  LIU, Guojun

    IPC: C09D11/00 ,  C09D11/10 ,  H05K1/02

    CPC classification number: H01L21/02381 ,  B82Y30/00 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628

    Abstract: Improved silicon/germanium nanoparticle inks are described that have silicon/ germanium nanoparticles well distributed within a stable dispersion. In particular the inks are formulated with a centrifugation step to remove contaminants as well as less well dispersed portions of the dispersion. A sonication step can be used after the centrifugation, which is observed to result in a synergistic improvement to the quality of some of the inks. The silicon/germanium ink properties can be engineered for particular deposition applications, such as spin coating or screen printing. Appropriate processing methods are described to provide flexibility for ink designs without surface modifying the silicon/germanium nanoparticles. The silicon/germanium nanoparticles are well suited for forming semiconductor components, such as components for thin film transistors or solar cell contacts.

    Abstract translation: 描述了改进的硅/锗纳米颗粒油墨，其具有良好分布在稳定分散体内的硅/锗纳米颗粒。 特别地，油墨通过离心步骤配制以除去分散体中的污染物以及较不良好分散的部分。 在离心之后可以使用超声处理步骤，这被观察到导致对一些油墨的质量的协同改进。 可以为特定的沉积应用（例如旋涂或丝网印刷）设计硅/锗油墨性质。 描述适当的处理方法以提供油墨设计的灵活性，而不对硅/锗纳米颗粒进行表面改性。 硅/锗纳米颗粒非常适合于形成诸如用于薄膜晶体管或太阳能电池触点的部件的半导体部件。

    SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON INKS AND CORRESPONDING PROCESSES
    6.
    发明申请
    SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED FROM DOPED SILICON INKS AND CORRESPONDING PROCESSES 审中-公开
    具有由掺杂硅油和相应工艺形成的掺杂表面的硅基材

    公开(公告)号：WO2012106137A2

    公开(公告)日：2012-08-09

    申请号：PCT/US2012/022215

    申请日：2012-01-23

    Applicant: NANOGRAM CORPORATION ,  LIU, Guojun ,  SRINIVASAN, Uma ,  CHIRUVOLU, Shivkumar

    Inventor： LIU, Guojun ,  SRINIVASAN, Uma ,  CHIRUVOLU, Shivkumar

    IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

    CPC classification number: H01L21/2252 ,  B82Y30/00 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.

    Abstract translation: 使用掺杂的硅纳米颗粒油墨和其它液体掺杂剂源可以提供合适的掺杂剂源，以便如果提供合适的盖，则使用热处理将掺杂剂元素驱动到晶体硅衬底中。 合适的帽包括例如盖板，可以或可以不搁置在基材表​​面上的盖和覆盖层。 可以实现期望的掺杂剂。 可以使用硅油墨递送掺杂的纳米颗粒。 在掺杂剂驱入或至少部分致密化成掺入产品装置的硅材料之后，可以除去残留的硅油墨。 硅掺杂适用于将掺杂剂引入结晶硅以形成太阳能电池。

    METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION
    8.
    发明申请
    METAL PATTERNING FOR ELECTRICALLY CONDUCTIVE STRUCTURES BASED ON ALLOY FORMATION 审中-公开
    基于合金形成的导电结构的金属图案

    公开(公告)号：WO2010135178A2

    公开(公告)日：2010-11-25

    申请号：PCT/US2010/034860

    申请日：2010-05-14

    Applicant: NANOGRAM CORPORATION ,  SRINIVASAN, Uma ,  PAKALA, Neeraj ,  SANDERS, William, A. ,  HIESLMAIR, Henry

    Inventor： SRINIVASAN, Uma ,  PAKALA, Neeraj ,  SANDERS, William, A. ,  HIESLMAIR, Henry

    IPC: H01L31/042 ,  H01L31/18

    CPC classification number: C22F1/00 ,  C21D1/34 ,  H01L21/32134 ,  H01L27/124 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y10T428/12396

    Abstract: Layered metal structures are patterned to form a surface with some locations having an alloy along the top surface at some locations and the original top metal layer at other locations along the surface. The alloy and original top metal layer can be selected to have differential etching properties such that the pattern of the alloy or original metal can be selectively etched to form a patterned metal interconnect. In general, the patterning is performed by localized heating that drives formation of the alloy at the heated locations. The metal patterning can be useful for solar cell applications as well as for electronics applications, such as display applications.

    Abstract translation: 层状金属结构被图案化以形成表面，其中一些位置在某些位置处具有沿着顶表面的合金，并且沿表面的其它位置具有原始顶部金属层。 可以选择合金和原始顶部金属层以具有差异蚀刻性质，使得可以选择性地蚀刻合金或原始金属的图案以形成图案化的金属互连。 通常，图案化是通过局部加热进行的，其驱动在加热位置形成合金。 金属图案化可用于太阳能电池应用以及电子应用，例如显示器应用。

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