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    In-Vacuum Beam Defining Aperture Cleaning for Particle Reduction
    2.
    发明申请
    In-Vacuum Beam Defining Aperture Cleaning for Particle Reduction 有权
    真空光束定义孔径清洁以减少粒子

    公开(公告)号：US20110240889A1

    公开(公告)日：2011-10-06

    申请号：US12755081

    申请日：2010-04-06

    Applicant: Neil K. Colvin ,  Jincheng Zhang

    Inventor： Neil K. Colvin ,  Jincheng Zhang

    IPC: H01J37/317

    CPC classification number: H01J37/04 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/047 ,  H01J2237/04735 ,  H01J2237/04756

    Abstract: A method is provided for reducing particle contamination in an ion implantation system, wherein an ion implantation system having source, mass analyzer, resolving aperture, decel suppression plate, and end station is provided. An ion beam is formed via the ion source, and a workpiece is transferred between an external environment and the end station for ion implantation thereto. A decel suppression voltage applied to the decel suppression plate is modulated concurrent with the workpiece transfer, therein causing the ion beam to expand and contract, wherein one or more surfaces of the resolving aperture and/or one or more components downstream of the resolving aperture are impacted by the ion beam, therein mitigating subsequent contamination of workpieces from previously deposited material residing on the one or more surfaces. The contamination can be mitigated by removing the previously deposited material or strongly adhering the previously deposited material to the one or more surfaces.

    Abstract translation: 提供了一种用于减少离子注入系统中的颗粒污染的方法，其中提供了具有源，质量分析器，分辨孔径，减速抑制板和终端站的离子注入系统。 通过离子源形成离子束，并且在外部环境和终端站之间传送工件以进行离子注入。 施加到减速抑制板的减速抑制电压与工件传送同时被调制，在其中使得离子束膨胀和收缩，其中分辨孔径的一个或多个表面和/或分辨孔径下游的一个或多个部件是 受到离子束的影响，其中减轻随后从驻留在一个或多个表面上的先前沉积的材料污染工件。 可以通过去除先前沉积的材料或将先前沉积的材料强烈粘附到一个或多个表面来减轻污染。

    Flourine and HF Resistant Seals for an Ion Source
    3.
    发明申请
    Flourine and HF Resistant Seals for an Ion Source 审中-公开
    用于离子源的面粉和HF抗性密封胶

    公开(公告)号：US20140319994A1

    公开(公告)日：2014-10-30

    申请号：US13870425

    申请日：2013-04-25

    Applicant: Neil K. Colvin ,  Tseh Jen Hsieh

    Inventor： Neil K. Colvin ,  Tseh Jen Hsieh

    IPC: H01J37/317 ,  F16J15/02 ,  H01J37/30

    CPC classification number: H01J37/3171 ,  F16J15/02 ,  H01J5/26 ,  H01J5/32 ,  H01J27/08 ,  H01J37/08 ,  H01J37/3002

    Abstract: An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. Electrically insulating seal element(s) engaging an outer surface of the arc chamber body are provided for impeding material from exiting the chamber interior openings of the arc chamber body. The seal element(s) have a ceramic body that includes an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall. The electrically insulating seal element comprises a Boron Nitride (BN) material.

    Abstract translation: 用于产生离子流的示例性离子源具有至少部分地界定电弧室的电离区域的室主体。 电弧室主体与热丝电弧室壳体一起使用，其直接或间接地将阴极加热至足够的温度，以使电子流过电弧室的电离区域。 设置与电弧室主体的外表面接合的绝缘密封元件用于阻止材料离开电弧室主体的室内部开口。 密封元件具有陶瓷体，该陶瓷体包括沿着圆周外唇缘邻接电弧室主体的外壁。 密封件还具有一个或多个径向内部通道，其由与外壁间隔开的一个或多个内壁限定。 电绝缘密封元件包括氮化硼（BN）材料。

    Adjustable louvered plasma electron flood enclosure
    4.
    发明授权
    Adjustable louvered plasma electron flood enclosure 有权
    可调百叶等离子体电子防洪罩

    公开(公告)号：US08242469B2

    公开(公告)日：2012-08-14

    申请号：US12835138

    申请日：2010-07-13

    Applicant: Neil K. Colvin

    Inventor： Neil K. Colvin

    IPC: H01J37/317 ,  H01J37/02

    CPC classification number: H01J37/3171 ,  H01J3/40 ,  H01J37/026 ,  H01J37/09 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/31705

    Abstract: An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.

    Abstract translation: 提供了用于减少离子注入系统中的颗粒污染的装置。 该装置具有外壳，其具有入口，出口和至少一个百叶窗，其中限定有多个百叶窗。 离子注入系统的束线通过入口和出口，其中至少一个百叶窗侧的多个百叶窗被配置为机械地过滤沿着束线行进的离子束的边缘。 外壳可以具有两个百叶窗和百叶窗顶部，其中当垂直于束线测量时，外壳的入口和出口的相应宽度通常由两个百叶窗相对于彼此的位置来限定。 一个或多个百叶窗侧面可以可调节地安装，其中外壳的入口和出口中的一个或多个的宽度是可控的。

    Extraction electrode assembly voltage modulation in an ion implantation system
    6.
    发明授权
    Extraction electrode assembly voltage modulation in an ion implantation system 有权
    离子注入系统中的提取电极组件电压调制

    公开(公告)号：US09006690B2

    公开(公告)日：2015-04-14

    申请号：US13886963

    申请日：2013-05-03

    Applicant: Neil K. Colvin ,  Jincheng Zhang

    Inventor： Neil K. Colvin ,  Jincheng Zhang

    IPC: H01J37/317 ,  H01J37/08

    CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/304

    Abstract: A method is disclosed for reducing particle contamination in an ion implantation system, wherein an ion beam is created via the ion source operating in conjunction with an extraction electrode assembly. A cathode voltage is applied to the ion source for generating ions therein, and a suppression voltage is applied to the extraction assembly for preventing electrons in the ion beam from being drawn into the ion source. The suppression voltage is selectively modulated, thereby inducing a current flow or an arc discharge through the extraction assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces. An improvement to an ion implantation system is also disclosed in accordance with the foregoing, wherein a controller is configured to selectively modulate a voltage between a predetermined voltage and a predetermined suppression voltage generally concurrent with the transferring of the workpiece, thereby inducing a current flow or an arc discharge through the extraction electrode assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces.

    Abstract translation: 公开了一种用于减少离子注入系统中的颗粒污染的方法，其中通过与抽出电极组件一起操作的离子源产生离子束。 向离子源施加阴极电压以产生离子，并且将抑制电压施加到提取组件，以防止离子束中的电子被吸入离子源。 抑制电压被选择性地调制，从而通过提取组件引起电流或电弧放电以去除其表面上的沉积物，以减轻随后的工件污染。 根据前述还公开了对离子注入系统的改进，其中控制器被配置为选择性地调制预定电压和预定的抑制电压之间的电压，通常与工件的传送同时，从而引起电流或 通过引出电极组件的电弧放电以去除其表面上的沉积物，以减轻随后的工件污染。

    Implementation of CO-Gases for Germanium and Boron Ion Implants
    8.
    发明申请
    Implementation of CO-Gases for Germanium and Boron Ion Implants 有权
    锗和硼离子植入物的CO气体的实施

    公开(公告)号：US20120119113A1

    公开(公告)日：2012-05-17

    申请号：US12948309

    申请日：2010-11-17

    Applicant: Neil K. Colvin ,  Tseh-Jen Hsieh

    Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

    IPC: G21G5/00

    CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/022

    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.

    Abstract translation: 公开了一种用于提高离子源的性能和延长寿命的离子注入系统。 含氟掺杂剂气体源与一种或多种共同气体一起引入离子室。 一种或多种共气体可以包括氢或氪。 共气体减轻离子源室中游离氟离子引起离子源失效的影响。

    Hydrogen COGas For Carbon Implant
    9.
    发明申请
    Hydrogen COGas For Carbon Implant 有权
    碳植入物的氢COGas

    公开(公告)号：US20120118232A1

    公开(公告)日：2012-05-17

    申请号：US12948369

    申请日：2010-11-17

    Applicant: Neil K. Colvin ,  Tseh-Jen Hsieh

    Inventor： Neil K. Colvin ,  Tseh-Jen Hsieh

    IPC: C23C14/48 ,  H05H15/00

    CPC classification number: H01J37/3171 ,  H01J27/022 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08

    Abstract: A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

    Abstract translation: 提供了一种用于增加离子注入机中离子源寿命的系统，装置和方法。 通过利用与游离氧原子反应形成氢氧化物和水的氢气体来控制由含碳和含氧源气体产生的离子源和离子源室中毒的氧化。

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