Abstract:
PROBLEM TO BE SOLVED: To provide a high-power laser apparatus, particularly suitable to an application case of pumping and capable of being manufactured at a technical cost as small as possible. SOLUTION: A semiconductor (1) is integrated into a monolithic structure, where a cooling element (2) is provided, and the semiconductor (1) is provided on the cooling element (2). COPYRIGHT: (C)2005,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide an improved manufacturing method, for a semiconductor laser element, in which a semiconductor substrate can be attached at low costs and simply. SOLUTION: The manufacturing method for the semiconductor laser element is provided with a step in which a cooling element is manufactured by using an electrical insulating platelike substrate (1) comprising the main surface covered with a metal layer, a step in which the metal layer is structured into a plurality of chip mounting regions (2), a step in which a plurality of semiconductor laser chips (11) are mounted and a step in which the cooling element is divided into a plurality of semiconductor laser elements equipped with at least one each of a semiconductor laser chip and a part of the cooling element.
Abstract:
A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.
Abstract:
The laser diode has monolithic integrated semiconductor (1) having active layers (5,9) arranged alternately between wave guide layers (4,6,8,10), which is provided on a micro channel type coolant (2), through adhesive layer (12).
Abstract:
The laser component has a laser array (2) and an optical device (1) for rearranging a laser beam bundle emitted from the array. The component has at least two individual laser beams with the same first emission direction (10). The beam axes are parallel to each other, lie in a common plane and are spaced apart by a first distance (a1). The optical device has a reversing mirror element (3) after the laser array in the beam direction. The beams of the bundle (11) are deflected by the mirror element parallel and perpendicular to the common plane (5). The mirror element has the same number of beam passing waveguide strips (4) as the number of individual beams. The strips are combined in a stack and their thickness is less than the first distance. The strips lie parallel to each other and at an angle to the common plane of the beams. A waveguide strip is associated with each individual beam. The corresponding beam is coupled into the first end (13) of the strip through a beam coupling surface (12). Each strip has a reflection surface (7) which intersects the beam axis of the respective beam. The reflection surface faces a second end (14) of the associated strip and reflects the beam to the second end region. The second end has a beam output surface (15) through which the individual laser beam exits from the waveguide strip.
Abstract:
The invention relates to a laser diode device with a laser diode chip (4) th at is mounted in a housing (1) for a light-emitting diode. Said laser diode chi p (4) is structured as a multi-beam laser diode (L1, L2) the terminals of whic h are linked with the terminal of the LED housing.
Abstract:
A method for producing semiconductor laser components in which, a number of chip mounting areas are formed on a cooling element having an electrically insulating carrier that is in the form of a plate. A number of semiconductor laser chips are then fit to the cooling element, with one semiconductor laser chip being arranged on each chip mounting area. Finally, the cooling element, with the semiconductor bodies fit on it, is subdivided into a number of semiconductor laser components.
Abstract:
The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
Abstract:
The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
Abstract:
The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).