Semiconductor laser module
    2.
    发明专利
    Semiconductor laser module 审中-公开
    半导体激光模块

    公开(公告)号:JP2009194389A

    公开(公告)日:2009-08-27

    申请号:JP2009032915

    申请日:2009-02-16

    Abstract: PROBLEM TO BE SOLVED: To provide an especially compact semiconductor laser module.
    SOLUTION: The semiconductor laser module includes a module carrier with a fixing surface, a pumping device arranged on the fixing surface, a surface emission semiconductor laser arranged on the fixing surface, and a frequency converter arranged on the fixing surface, wherein the maximum fixing surface of the module carrier is 100 m
    2 , the surface emission semiconductor laser includes a fixing block having an upper surface and a fixing surface, and at least one semiconductor laser chip arranged on the upper surface of the fixing block, the fixing surface of the fixing block extends substantially perpendicularly to the upper surface of the fixing block, and the surface emission semiconductor laser is fixed onto the fixing surface of the module carrier by the fixing surface of the module carrier.
    COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供特别紧凑的半导体激光器模块。 解决方案:半导体激光器模块包括具有固定表面的模块载体,布置在固定表面上的泵送装置,布置在固定表面上的表面发射半导体激光器和布置在固定表面上的变频器,其中 模块载体的最大固定面为100微米,表面发射半导体激光器包括具有上表面和固定表面的固定块,以及至少一个半导体激光芯片,其布置在 固定块,固定块的固定表面基本上垂直于固定块的上表面延伸,并且表面发射半导体激光器通过模块载体的固定表面固定到模块载体的固定表面上。 版权所有(C)2009,JPO&INPIT

    6.
    发明专利
    未知

    公开(公告)号:DE102006042195A1

    公开(公告)日:2008-03-27

    申请号:DE102006042195

    申请日:2006-09-08

    Abstract: The invention specifies an etalon (1) which is provided as frequency-selective element in a resonator (30, 11) of an opto-electronic semiconductor apparatus, where the etalon (1) comprises an etalon layer (22) which contains at least one of the following materials or is made from one of these materials: glass, semiconductor material.

    10.
    发明专利
    未知

    公开(公告)号:DE102005004478B4

    公开(公告)日:2009-03-19

    申请号:DE102005004478

    申请日:2005-01-31

    Abstract: The device has a trapezoidal semiconductor laser (1) with a reinforcing area (2) whose width increases in a main radiation direction (3) of the laser. The laser is arranged next to a periodically polarized non-linear optical unit (4) for frequency conversion of the radiation emitted by the laser. The laser is designed as a semiconductor laser bars with parallel emission zones that are placed at a distance from each other. An independent claim is also included for an application of a semiconductor laser device for a printing machine, an exposure system, a copier, a scanner, a projector or an indicator device.

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