Abstract:
The invention relates to a semiconductor laser with a semiconductor body (1) that comprises a first and a second main surface, preferably provided with one contact surface (2,3) each, and a first and a second mirror surface (6,7). An active layer (4) and a current-carrying layer (5) are interposed between the main surfaces. The current carrying layer (5) has at least one strip-shaped resistance zone (8) that runs at an angle to the resonator axis (18) and whose specific surface resistance is higher in at least some zones than in the zones of the current carrying layer (5) adjoining the resistance zone (8).
Abstract:
A white light source has a light emission device, in particular an IR laser diode, whose emitted radiation beam is converted, in a nonlinear-optical element and a conversion element, into a radiation beam with wavelengths lambda 1 , . . . lambda n which can be perceived as white light and can have a higher power rating.
Abstract:
A polarization detector is described which contains a beam splitter, which disperses an incident light beam into partial beam paths. The partial beams pass though lambda/4 wafers and a cholesterol layer and impinge upon detectors. The polarization direction of the incident light beam can be measured by the polarization detector with the aid of the signal level of the detectors.
Abstract:
Surface-emitting semiconductor laser arrangement comprises a vertical emitter (20) having a radiation-producing layer (14), and a modulation radiation source (30) for modulating the output of the laser arrangement. The modulation radiation source has an edge-emitting semiconductor structure (15) with a radiation-producing active layer and arranged so that it emits radiation during operation. The modulation radiation source is coupled with the radiation-producing layer of the vertical emitter.
Abstract:
The laser component has a laser array (2) and an optical device (1) for rearranging a laser beam bundle emitted from the array. The component has at least two individual laser beams with the same first emission direction (10). The beam axes are parallel to each other, lie in a common plane and are spaced apart by a first distance (a1). The optical device has a reversing mirror element (3) after the laser array in the beam direction. The beams of the bundle (11) are deflected by the mirror element parallel and perpendicular to the common plane (5). The mirror element has the same number of beam passing waveguide strips (4) as the number of individual beams. The strips are combined in a stack and their thickness is less than the first distance. The strips lie parallel to each other and at an angle to the common plane of the beams. A waveguide strip is associated with each individual beam. The corresponding beam is coupled into the first end (13) of the strip through a beam coupling surface (12). Each strip has a reflection surface (7) which intersects the beam axis of the respective beam. The reflection surface faces a second end (14) of the associated strip and reflects the beam to the second end region. The second end has a beam output surface (15) through which the individual laser beam exits from the waveguide strip.
Abstract:
An immersion lens, for a magneto-optical memory device, consists of a semiconductor material or is followed by a transparent higher refractive index layer. An immersion system (1), for a magneto-optical memory device, comprises a lens (3) of spherical segment shape having a flat face and a curved face, the lens material being transparent to the wavelength of the electromagnetic radiation (2) used in the device and having a higher refractive index than air. The lens (3) consists of a semiconductor material; or (ii) the lens (3) is followed, in the radiation propagation direction, by a transparent higher refractive index layer (4) which has a main face (6) facing the flat lens face (5) and which consists of a material with a refractive index higher than that of the lens material. Preferred Feature: The higher refractive index layer (4) consists of a transparent semiconductor material.
Abstract:
The invention relates to an infrared emitter component with a commercial light-emitting diode (LED) package (11) which has two electrode terminals (13, 14), one of which has a well-shaped reflector (12), and which has an optically transparent, electrically nonconductive encapsulating material (16). The invention provides that a semiconductor laser chip (1) is mounted in the well-shaped reflector (12) of the LED package. The semiconductor laser chip (1) has a quantum-well structure, especially with a strained-layer structure, for example MOVPE epitaxial layers with the layer sequence GaAlAs-InGaAs-GaAlAs. The optically transparent, electrically nonconductive material (16) of the LED package (11) may incorporate a diffuser material (17) which in terms of type and concentration is structured and introduced so as to produce, in conjunction with the semiconductor laser chip (1) encapsulated in the LED package (11), a radiation characteristic or an enlargement of the effective emission surface that is comparable to that of a commercial infrared LED.
Abstract:
A electroluminescent component (1) comprises a substrate (2) carrying several side-by-side spaced apart radiation decoupling elements (4). The radiation decoupling elements comprise active laminated stacks (7) with an emission zone (8) and a contact element on every radiation decoupling element (4). The width (b') of the contact elements is smaller than the width of the radiation decoupling elements (b) and each contact element is formed on the center of a radiation decoupling element. The width (b) of the radiation decoupling elements at a given height (h) is sufficiently small to allow a substantial amount of light (11) emitted laterally of the emission zone (8) to be decoupled directly through the lateral faces (12) of the radiation decoupling elements. The radiation decoupling elements (4) may have a strip-like structure having a width (b), a point-like structure having a diameter corresponding to (b) or may be cylindrical or polyhedral in shape. The radiation decoupling elements are electrically connected to each other and with a bond pad (15) on the front side of the component (1). The dimensions of the radiation decoupling elements (4) meet the condition: 0