公开(公告)号：DE59711671D1

公开(公告)日：2004-07-01

申请号：DE59711671

申请日：1997-06-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： REEH ULRIKE ,  HOEHN KLAUS ,  STATH NORBERT ,  WAITL GUENTHER ,  SCHLOTTER PETER ,  SCHMIDT ROLF ,  SCHNEIDER JUERGEN

IPC: C09K11/00 ,  C09K11/08 ,  C09K11/56 ,  C09K11/62 ,  C09K11/77 ,  C09K11/79 ,  C09K11/80 ,  F21K2/00 ,  F21V9/08 ,  F21Y101/02 ,  G02F1/13357 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01S5/32 ,  H01L33/00

Abstract: A light radiating semiconductor constructional element comprises: (i) a semiconductor body (1) having a series of semiconductor layers giving out an electromagnetic radiation of wavelength lambda not greater than 520 nm; (ii) first and second electrical connections (2,3) connected to the semiconductor body (1); and (iii) a luminescence conversion element. The conversion element converts radiation of a first spectral partial region of radiation originating from a first wavelength region into radiation of a second wavelength region. The semiconductor constructional element gives out radiation from a second spectral partial region of first wavelength region and radiation of second wavelength region.

公开(公告)号：DE59713024D1

公开(公告)日：2010-01-28

申请号：DE59713024

申请日：1997-06-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHLOTTER PETER ,  REEH ULRIKE ,  SCHMIDT ROLF ,  SCHNEIDER JUERGEN ,  HOEHN KLAUS ,  STATH NORBERT ,  WAITL GUENTER

IPC: C09K11/00 ,  H01L33/00 ,  C09K11/08 ,  C09K11/56 ,  C09K11/62 ,  C09K11/77 ,  C09K11/79 ,  C09K11/80 ,  F21K2/00 ,  F21V9/08 ,  F21Y101/02 ,  G02F1/13357 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01S5/32

Abstract: A light radiating semiconductor constructional element comprises: (i) a semiconductor body (1) having a series of semiconductor layers giving out an electromagnetic radiation of wavelength lambda not greater than 520 nm; (ii) first and second electrical connections (2,3) connected to the semiconductor body (1); and (iii) a luminescence conversion element. The conversion element converts radiation of a first spectral partial region of radiation originating from a first wavelength region into radiation of a second wavelength region. The semiconductor constructional element gives out radiation from a second spectral partial region of first wavelength region and radiation of second wavelength region.

公开(公告)号：DE59713056D1

公开(公告)日：2011-03-31

申请号：DE59713056

申请日：1997-09-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： DEBRAY ALEXANDRA ,  HOEHN KLAUS ,  SCHLOTTER PETER ,  SCHMIDT RALF ,  SCHNEIDER JUERGEN

IPC: F21V5/04 ,  B29C39/02 ,  H01L33/00 ,  B29K63/00 ,  B29K105/16 ,  C08K3/22 ,  C08K3/30 ,  C08K7/00 ,  C08K9/00 ,  C08L63/00 ,  C09K11/00 ,  C09K11/08 ,  C09K11/62 ,  C09K11/64 ,  C09K11/77 ,  C09K11/79 ,  C09K11/80 ,  F21V9/16 ,  F21Y101/02 ,  H01L23/29 ,  H01L23/31 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01S5/32 ,  H05B33/04 ,  H05B33/12

公开(公告)号：DE59708820D1

公开(公告)日：2003-01-09

申请号：DE59708820

申请日：1997-09-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HOEHN KLAUS ,  DEBRAY ALEXANDRA ,  SCHLOTTER PETER ,  SCHMIDT RALF ,  SCHNEIDER JUERGEN

IPC: B29C39/02 ,  B29K63/00 ,  F21V5/04 ,  B29K105/16 ,  C08K3/22 ,  C08K3/30 ,  C08K7/00 ,  C08K9/00 ,  C08L63/00 ,  C09K11/00 ,  C09K11/08 ,  C09K11/62 ,  C09K11/64 ,  C09K11/77 ,  C09K11/79 ,  C09K11/80 ,  F21V9/16 ,  F21Y101/02 ,  H01L23/29 ,  H01L23/31 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01S5/32 ,  H05B33/04 ,  H05B33/12 ,  H01L33/00

Abstract: A light-emitting semiconductor device has (a) a semiconductor body (1) with a layer sequence (7) capable of emitting electromagnetic radiation of a first wavelength range in the UV, blue and/or green region; and (b) a luminescence conversion element which converts radiation of the first wavelength range to radiation of one or more second, different wavelength ranges so that the device emits mixed radiation in the first and second wavelength ranges. Preferably, the luminescence conversion element consists of organic dye molecules in a plastic matrix preferably of silicone, thermoplastic or thermosetting material, especially an epoxide resin or polymethyl methacrylate matrix, and/or an inorganic phosphor (preferably a Ce-doped garnet, especially Ce:YAG) in an epoxide resin or low melting point inorganic glass matrix.

公开(公告)号：DE19638667C2

公开(公告)日：2001-05-17

申请号：DE19638667

申请日：1996-09-20

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHLOTTER PETER ,  SCHMIDT ROLF ,  SCHNEIDER JUERGEN

IPC: B29C39/02 ,  B29K63/00 ,  B29K105/16 ,  C08K3/22 ,  F21V5/04 ,  C08K3/30 ,  C08K7/00 ,  C08K9/00 ,  C08L63/00 ,  C09K11/00 ,  C09K11/08 ,  C09K11/62 ,  C09K11/64 ,  C09K11/77 ,  C09K11/79 ,  C09K11/80 ,  F21V9/16 ,  F21Y101/02 ,  H01L23/29 ,  H01L23/31 ,  H01L33/48 ,  H01L33/50 ,  H01L33/56 ,  H01S5/32 ,  H05B33/04 ,  H05B33/12 ,  H01L33/00 ,  G02F2/02 ,  F21K7/00 ,  G09F13/00

Abstract: A light-emitting semiconductor device has (a) a semiconductor body (1) with a layer sequence (7) capable of emitting electromagnetic radiation of a first wavelength range in the UV, blue and/or green region; and (b) a luminescence conversion element which converts radiation of the first wavelength range to radiation of one or more second, different wavelength ranges so that the device emits mixed radiation in the first and second wavelength ranges. Preferably, the luminescence conversion element consists of organic dye molecules in a plastic matrix preferably of silicone, thermoplastic or thermosetting material, especially an epoxide resin or polymethyl methacrylate matrix, and/or an inorganic phosphor (preferably a Ce-doped garnet, especially Ce:YAG) in an epoxide resin or low melting point inorganic glass matrix.