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    Light emitting diode chip and method for manufacturing the same
    1.
    发明专利
    Light emitting diode chip and method for manufacturing the same 审中-公开
    发光二极管芯片及其制造方法

    公开(公告)号：JP2012049571A

    公开(公告)日：2012-03-08

    申请号：JP2011265941

    申请日：2011-12-05

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： GEORG BOGNER ,  JIKUMAR KUGLER ,  NEUMANN GERALD ,  ERNST NIRSCHL ,  OBERSCHMID RAIMUND ,  KARL-HEINZ SCHLERETH ,  OLAF SCHONFELD ,  STATH NORBERT

    IPC: H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/14 ,  H01L33/44

    CPC classification number: H01L33/20 ,  H01L33/02 ,  H01L33/08 ,  H01L33/145 ,  H01L33/44 ,  H01L2224/16225

    Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode chip which can improve characteristics of a beam generated to perform an output coupling more than those of a chip of a conventional system, and can be fully incorporated into an LED casing structure of a conventional form, and to provide a method for manufacturing the light emitting diode chip, being improved so as to take only a slight increase in time and labor technically compared with a conventional method for manufacturing the light emitting diode chip.SOLUTION: A light emitting diode chip has a beam emitting active area (32) with a cross sectional area F, and a beam transmission window layer (2) with a refractive index npost-connected to the beam emitting active area (32) in an irradiation direction. The window layer has a cross sectional area Ffor an optical output coupling and an output coupling plane contacted with a medium with a refractive index n, where n>nand the cross sectional area Fof the beam emitting active area (32) is smaller than the cross sectional area Fof the output coupling plane.

    Abstract translation: 解决的问题：提供一种发光二极管芯片，该发光二极管芯片能够提高所产生的光束的特性以进行比常规系统的芯片更多的输出耦合，并且可以完全结合到LED壳体结构 并且提供一种用于制造发光二极管芯片的方法，与传统的制造发光二极管芯片的方法相比，被改进以便在技术上仅仅稍微增加时间和劳动。 解决方案：发光二极管芯片具有横截面积F L 的光束发射有源区域（32），以及具有 在照射方向后连接到光束发射有源区域（32）的折射率n s 。 窗口层具有用于光学输出耦合的横截面积F C 和与折射率n M的介质接触的输出耦合平面 ，其中n s > n M ，横截面积F L 光束发射有源区域（32）的小于输出耦合平面的横截面积F C 。 版权所有（C）2012，JPO＆INPIT

    8.
    发明专利
    未知

    公开(公告)号：DE102004050371A1

    公开(公告)日：2006-04-13

    申请号：DE102004050371

    申请日：2004-10-15

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： SORG JOERG ERICH ,  GUENTHER EWALD KARL MICHAEL ,  STATH NORBERT

    IPC: H01L33/50 ,  H01L33/52 ,  H01L33/54 ,  H01L33/62

    Abstract: An optoelectronic component comprises a semiconductor chip (1) with a lower contact (4) on a support (10) both encapsulated by an electrically insulating transparent material (3) having holes to a contact (6) and connection area (8) that are joined by a conductive layer (14). Radiation emitted (13) is decoupled through the encapsulation. Independent claims are also included for the following: (A) a production process for the above;and (B) a lighting device as above.

    Monolithic electroluminescent device, especially an LED chip, has a row of emission zones individually associated with decoupling elements for decoupling radiation from the device
    9.
    发明专利
    Monolithic electroluminescent device, especially an LED chip, has a row of emission zones individually associated with decoupling elements for decoupling radiation from the device 未知

    公开(公告)号：DE19911717A1

    公开(公告)日：2000-09-28

    申请号：DE19911717

    申请日：1999-03-16

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： SPAETH WERNER ,  STATH NORBERT

    IPC: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/00

    Abstract: Monolithic electroluminescent device, having a row of emission zones (4) individually associated with radiation decoupling elements (5) for decoupling electromagnetic radiation from the device. A monolithic electroluminescent device has an active layer sequence (2) followed, in the radiation emission direction (9), by a radiation decoupling layer (13) adjoining a medium of refractive index (nM) less than that (nS) of the decoupling layer material. The active layer sequence (2) has several emission zones (4) which are arranged alongside one another in relation to the emission direction (9) and each of which is associated with a radiation decoupling element (5) of the decoupling layer (13) for decoupling electromagnetic radiation, produced in the emission zones (4), from the device. An Independent claim is also included for production of the above device. Preferred Features: The decoupling elements (5) consist of radiation transparent semiconductor material and are monolithically produced by conventional wet or dry chemical etching.

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