公开(公告)号：EP0206422A1

公开(公告)日：1986-12-30

申请号：EP86201069

申请日：1986-06-19

Applicant: PHILIPS NV

Inventor： ZWIER JAN ,  VASTERINK JOHANNES HERMANNUS A ,  VAN ESDONK JOHANNES

IPC: H01J1/304 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J3/02

CPC classification number: H01J1/32 ,  H01J1/308 ,  H01J1/34 ,  H01J3/02 ,  H01J2201/3423

Abstract: @ In order to improve the stability of a cold cathode (5) of the reverse biased junction type, the vacuum space (2) is coupled with a reservoir (10), within which a source (21) of material reducing the work function, for example caesium, is present. By influencing the vapour pressure and the temperature in component parts (13, 16) of the reservoir (10) and in the source (21), loss of caesium due to adsorption or other phenomena occurring at the emitting surface (8) of the cathode (5) can be compensated for by an incident beam of caesium (25).

公开(公告)号：GB2169132B

公开(公告)日：1988-11-16

申请号：GB8528326

申请日：1985-11-18

Applicant: PHILIPS NV

Inventor： VAN DEN BROEK MARTINUS HYACINT ,  ZWIER JAN

IPC: H01J29/04 ,  H01J3/02 ,  H01J29/84

Abstract: Positive ions which are generated in a vacuum tube (1) and can adversely affect the electron emission of a cathode (3) are collected for the major part by a screen grid or diaphragm (5), which forms part of a positive electron lens (4,5). In the case of a semiconductor cathode having a circular emission region (13) having a diameter larger than that of the opening in the screen grid (5), this emission region (13) is struck only by positive ions generated in a small region between the cathode (3) and a first grid (4). These ions moreover have a comparatively low energy so that the emission behavior is to only a limited extent adversely affected by sputtering by positive ions which would remove cathode material (33), such as cesium.

公开(公告)号：GB2167900B

公开(公告)日：1988-10-12

申请号：GB8528327

申请日：1985-11-18

Applicant: PHILIPS NV

Inventor： ZWIER JAN

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/12

Abstract: The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns by means of separate emission regions, whose overall surface area is much smaller than that of the actual emission patter. Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained.

公开(公告)号：AU5004785A

公开(公告)日：1986-05-29

申请号：AU5004785

申请日：1985-11-19

Applicant: PHILIPS NV

Inventor： ZWIER JAN

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/12 ,  H01L23/52 ,  H01L49/00

Abstract: The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns by means of separate emission regions, whose overall surface area is much smaller than that of the actual emission patter. Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained.

公开(公告)号：IT8522879D0

公开(公告)日：1985-11-18

申请号：IT2287985

申请日：1985-11-18

Applicant: PHILIPS NV

Inventor： BROEK MARTINUS HYACINTHUS LAUR ,  ZWIER JAN

IPC: H01J29/04 ,  H01J3/02 ,  H01J29/84 ,  H01J

Abstract: Positive ions which are generated in a vacuum tube (1) and can adversely affect the electron emission of a cathode (3) are collected for the major part by a screen grid or diaphragm (5), which forms part of a positive electron lens (4,5). In the case of a semiconductor cathode having a circular emission region (13) having a diameter larger than that of the opening in the screen grid (5), this emission region (13) is struck only by positive ions generated in a small region between the cathode (3) and a first grid (4). These ions moreover have a comparatively low energy so that the emission behavior is to only a limited extent adversely affected by sputtering by positive ions which would remove cathode material (33), such as cesium.

公开(公告)号：DE3538176C2

公开(公告)日：1994-07-28

申请号：DE3538176

申请日：1985-10-26

Applicant: PHILIPS NV

Inventor： BROEK MARTINUS ,  ZWIER JAN

IPC: H01J29/04 ,  H01J3/02 ,  H01J29/84 ,  H01J3/40 ,  H01J1/30 ,  H01J37/073

Abstract: Positive ions which are generated in a vacuum tube (1) and can adversely affect the electron emission of a cathode (3) are collected for the major part by a screen grid or diaphragm (5), which forms part of a positive electron lens (4,5). In the case of a semiconductor cathode having a circular emission region (13) having a diameter larger than that of the opening in the screen grid (5), this emission region (13) is struck only by positive ions generated in a small region between the cathode (3) and a first grid (4). These ions moreover have a comparatively low energy so that the emission behavior is to only a limited extent adversely affected by sputtering by positive ions which would remove cathode material (33), such as cesium.

公开(公告)号：HK87191A

公开(公告)日：1991-11-08

申请号：HK87191

申请日：1991-10-31

Applicant: PHILIPS NV

Inventor： ZWIER JAN

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/12

Abstract: The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns by means of separate emission regions, whose overall surface area is much smaller than that of the actual emission patter. Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained.

公开(公告)号：FR2578356A1

公开(公告)日：1986-09-05

申请号：FR8602824

申请日：1986-02-28

Applicant: PHILIPS NV

Inventor： ZWIER JAN ,  ANTONIUS JOHANNES HERMANNUS

IPC: H01J1/308 ,  H01J1/30

公开(公告)号：FR2573573A1

公开(公告)日：1986-05-23

申请号：FR8517070

申请日：1985-11-19

Applicant: PHILIPS NV

Inventor： ZWIER JAN

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/12

Abstract: The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns by means of separate emission regions, whose overall surface area is much smaller than that of the actual emission patter. Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained.

公开(公告)号：CA1249011A

公开(公告)日：1989-01-17

申请号：CA495369

申请日：1985-11-14

Applicant: PHILIPS NV

Inventor： ZWIER JAN

IPC: H01J1/30 ,  H01J1/308 ,  H01J29/04 ,  H01J31/12

Abstract: 17 Semiconductor cathode with increased stability. The stability of semiconductor cathodes is improved by reducing the effective emitting surface area. This is effected by producing emission patterns (5) by means of separate emission regions (4), whose overall surface area is much smaller than that of the actual emission pattern (5). Due to the higher emission current and adjustment current, adsorbed particles, which adversely affect the stability of the emission, are rapidly drained. (Fig. 1).