公开(公告)号：AU2002303842A1

公开(公告)日：2002-12-03

申请号：AU2002303842

申请日：2002-05-22

Applicant: REFLECTIVITY INC

Inventor： PATEL SATYADEV R ,  SCHAADT GREGORY P ,  HUIBERS ANDREW G ,  HEUREUX PETER J

IPC: B81B3/00 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461 ,  B81C5/00 ,  G02B26/08

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate; providing a sacrificial layer directly or indirectly on the substrate; providing one or more micromechanical structural layers on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material. Another embodiment of the method is for etching a silicon material on or within a substrate, comprising: performing a first etch to remove a portion of the silicon, the first etch comprising providing an etchant gas and energizing the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of silicon; performing a second etch to remove additional silicon, the second etch comprising providing an etchant gas that chemically but not physically etches the additional silicon.

公开(公告)号：AU8019000A

公开(公告)日：2001-05-08

申请号：AU8019000

申请日：2000-10-13

Applicant: REFLECTIVITY INC

Inventor： PATEL SATYADEV R ,  SCHAADT GREGORY P ,  MACDONALD DOUGLAS B

IPC: H01L21/306 ,  H01L21/308 ,  C03C15/00

公开(公告)号：AU9322501A

公开(公告)日：2002-03-13

申请号：AU9322501

申请日：2001-08-28

Applicant: REFLECTIVITY INC

Inventor： PATEL SATYADEV ,  SCHAADT GREGORY P ,  MACDONALD DOUGLAS B ,  MACDONALD NILES K

IPC: H01L21/302 ,  B81B3/00 ,  C03C15/00 ,  C23F1/00 ,  C23F1/08 ,  C23F1/12 ,  C25F3/12 ,  H01L20060101 ,  H01L21/00

Abstract: Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.

公开(公告)号：WO02095800A3

公开(公告)日：2003-02-13

申请号：PCT/US0216224

申请日：2002-05-22

Applicant: REFLECTIVITY INC ,  PATEL SATYADEV R ,  HUIBERS ANDREW G ,  SCHAADT GREGORY P ,  HEUREUX PETER J

Inventor： PATEL SATYADEV R ,  HUIBERS ANDREW G ,  SCHAADT GREGORY P ,  HEUREUX PETER J

IPC: B81B3/00 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/461 ,  B81C5/00 ,  G02B26/08

CPC classification number: B81C1/00476 ,  B81C1/00547 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/112 ,  B82Y30/00

Abstract: An etching method, such as for forming a micromechanical device, is disclosed. One embodiment of the method is for releasing a micromechanical structure, comprising, providing a substrate (10); providing a sacrificial layer (20) directly or indirectly on the substrate; providing one or more micromechanical structural layers (30) on the sacrificial layer; performing a first etch to remove a portion of the sacrificial layer (20), the first etch comprising providing an etchant gas and energizing (42) the etchant gas so as to allow the etchant gas to physically, or chemically and physically, remove the portion of the sacrificial layer; performing a second etch to remove additional sacrificial material in the sacrificial layer, the second etch comprising providing a gas that chemically but not physically etches the additional sacrificial material.

Abstract translation: 公开了一种诸如用于形成微机械装置的蚀刻方法。 该方法的一个实施例是用于释放微机械结构，包括提供衬底（10）; 在衬底上直接或间接提供牺牲层（20）; 在牺牲层上提供一个或多个微机械结构层（30）; 执行第一蚀刻以去除牺牲层（20）的一部分，所述第一蚀刻包括提供蚀刻剂气体并激发（42）蚀刻剂气体，以便使蚀刻剂气体在物理或化学和物理上移除部分 的牺牲层; 执行第二蚀刻以去除牺牲层中的附加牺牲材料，第二蚀刻包括提供化学上但不物理蚀刻附加牺牲材料的气体。

公开(公告)号：WO2005036596A3

公开(公告)日：2005-12-15

申请号：PCT/US2004027760

申请日：2004-08-25

Applicant: REFLECTIVITY INC ,  SHI HONGQIN ,  SCHAADT GREGORY P

Inventor： SHI HONGQIN ,  SCHAADT GREGORY P

IPC: B81C1/00 ,  C23F1/12 ,  H01L20060101 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/461

CPC classification number: H01L21/31116 ,  B81C1/00531 ,  B81C2201/0109 ,  C23F1/12 ,  H01L21/32135 ,  H01L21/67069 ,  H01L21/67253

Abstract: The present invention provides a method for removing sacrificial materials in fabrications of microstructures using a selected spontaneous vapor phase chemical etchants. During the etching process, an amount of the etchant is fed into an etch chamber for removing the sacrificial material. Additional amount of the etchant are fed into the etch chamber according to a detection of an amount or an amount of an etching product so as to maintaining a substantially constant etching rate of the sacrificial materials inside the etch chamber. Accordingly, an etching system is provided for removing the sacrificial materials based on the disclosed etching method.

Abstract translation: 本发明提供一种使用选定的自发气相化学蚀刻剂去除微结构制造中的牺牲材料的方法。 在蚀刻过程中，将一定量的蚀刻剂送入用于去除牺牲材料的蚀刻室中。 根据蚀刻产物的量或量的检测，将蚀刻剂的额外量进料到蚀刻室中，以保持蚀刻室内的牺牲材料的蚀刻速率基本上恒定。 因此，提供了基于所公开的蚀刻方法去除牺牲材料的蚀刻系统。

公开(公告)号：WO2005035090A2

公开(公告)日：2005-04-21

申请号：PCT/US2004027573

申请日：2004-08-25

Applicant: REFLECTIVITY INC ,  SCHAADT GREGORY P ,  HONGQIN SHI

Inventor： SCHAADT GREGORY P ,  HONGQIN SHI

IPC: B01D20060101 ,  C23F1/00 ,  G01R31/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  B01D

CPC classification number: B81C1/00595 ,  B81C2201/0132

Abstract: The present invention teaches a method and apparatus for removing sacrificial materials in fabrications of microstructures using one or more selected spontaneous vapor phase etchants. The selected etchant is fed into an etch chamber containing the microstructure during each feeding cycle of a sequence of feeding cycles until the sacrificial material of the microstructure is exhausted through the chemical reaction between the etchant and the sacrificial material, Specifically, during a first feeding cycle, a first amount of selected spontaneous vapor phase etchant is fed into the etch chamber. At a second feeding cycle, a second amount of the etchant is fed into the etch chamber. The first amount and the second amount of the selected etchant may or may not be the same, The time duration of the feeding cycles are individually adjustable.

Abstract translation: 本发明教导了使用一种或多种选择的自发气相蚀刻剂去除微结构制造中的牺牲材料的方法和装置。 在一系列进料循环的每个进料循环期间，将所选择的蚀刻剂进料到含有微结构的蚀刻室中，直到微结构的牺牲材料通过蚀刻剂和牺牲材料之间的化学反应排出。具体地，在第一进料循环期间 ，将第一量的选择的自发气相蚀刻剂送入蚀刻室。 在第二进料循环中，将第二量的蚀刻剂送入蚀刻室。 所选择的蚀刻剂的第一量和第二量可以是相同的也可以不相同。进料循环的持续时间可以单独调节。

公开(公告)号：WO0219391A3

公开(公告)日：2002-06-13

申请号：PCT/US0141913

申请日：2001-08-28

Applicant: REFLECTIVITY INC ,  PATEL SATYADEV ,  SCHAADT GREGORY P ,  MACDONALD DOUGLAS B ,  MACDONALD NILES K

Inventor： PATEL SATYADEV ,  SCHAADT GREGORY P ,  MACDONALD DOUGLAS B ,  MACDONALD NILES K

IPC: H01L21/302 ,  C03C15/00 ,  C25F3/12 ,  H01L20060101 ,  H01L21/00

CPC classification number: H01L21/67063 ,  C03C15/00 ,  C03C2218/33 ,  H01L21/67017

Abstract: Processes for the addition or removal of a layer or region from a workpiece (14) material by contact with a process gas, in the manufacture of a microstructure, are enhanced by the use of a recirculation of the process gas. Recirculation is effected by a pump (18) that has no sliding or abrading parts that contact the process gas nor any wet (such as oil) seals or purge gas in the pump (18). Improved processing can be achieved by a process chamber (15) that contains a baffle (16), a perforated plate (17), or both, appropriately situated in the chamber (15) to deflect the incoming process gas and distribute it over the workpiece (14) surface. In certain embodiments, a diluent gas is added to the recirculation loop (36) and continuously recirculated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop (36). Also, cooling of the process gas, etching chamber (15) and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample (14) of microscopic dimensions.

Abstract translation: 通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触从工件（14）材料添加或去除层或区域的工艺。 再循环通过泵（18）实现，泵（18）没有与工艺气体接触的滑动或研磨部件以及泵（18）中的任何湿的（例如油）密封件或吹扫气体。 改进的处理可以通过包含挡板（16），多孔板（17）或两者的处理室（15）来实现，该处理室适当地位于室（15）中，以偏转进入的处理气体并将其分布在工件 （14）表面。 在某些实施方案中，稀释气体被添加到再循环回路（36）中并在其中连续再循环，随后将工艺气体（例如蚀刻剂气体）渗出到再循环回路（36）中。 此外，工艺气体，蚀刻室（15）和/或样品台的冷却可以帮助蚀刻工艺。 该方法对于从微观尺寸的样品（14）添加或除去材料特别有用。

公开(公告)号：EP1313896A4

公开(公告)日：2006-02-15

申请号：EP01973670

申请日：2001-08-28

Applicant: REFLECTIVITY INC

Inventor： PATEL SATYADEV ,  SCHAADT GREGORY P ,  MACDONALD DOUGLAS B ,  MACDONALD NILES K

IPC: H01L21/00 ,  H01L21/302 ,  C03C15/00 ,  C25F3/12 ,  H01L20060101

CPC classification number: H01L21/67063 ,  C03C15/00 ,  C03C2218/33 ,  H01L21/67017

Abstract: Processes for the addition or removal of a layer or region from a workpiece (14) material by contact with a process gas, in the manufacture of a microstructure, are enhanced by the use of a recirculation of the process gas. Recirculation is effected by a pump (18) that has no sliding or abrading parts that contact the process gas nor any wet (such as oil) seals or purge gas in the pump (18). Improved processing can be achieved by a process chamber (15) that contains a baffle (16), a perforated plate (17), or both, appropriately situated in the chamber (15) to deflect the incoming process gas and distribute it over the workpiece (14) surface. In certain embodiments, a diluent gas is added to the recirculation loop (36) and continuously recirculated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop (36). Also, cooling of the process gas, etching chamber (15) and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample (14) of microscopic dimensions.

Abstract translation: 通过使用工艺气体的再循环来增强在制造微结构中通过与工艺气体接触从w工件材料中添加或除去层或区域的工艺。 循环由不具有接触处理气体的滑动或研磨部件的泵进行，而不是在泵中的任何湿的（例如油）密封件或吹扫气体。 可以通过包含挡板，多孔板或两者的处理室来实现改进的处理，适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。 在某些实施方案中，将稀释气体加入到再循环回路中并在其中连续循环，随后将工艺气体（例如蚀刻剂气体）渗出到再循环回路中。 此外，处理气体，蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。 该方法对于从微观尺寸的样品中添加或除去材料特别有用。