Abstract:
A wafer measurement station (19) integrated within a process tool (11) has a scatterometry instrument (35) for measuring patterned features on wafers (31). A wafer handler (17) feeds wafers between a cassette (15) and one or more process stations (13) of the process tool. Wafers presented to the measurement station are held on a wafer support (33), which may be moveable, and a scatterometry instrument has an optical measurement system (41) that is moveable by a stage (39) over the wafer support. A window (37) isolates the moveable optics from the wafer. The optical measurement system are microscope-based optics forming a low NA system. The illumination spot size at the wafer is larger than a periodicity of the patterned features, and data processing uses a scattering model to analyze the optical signature of the collected light.
Abstract:
A small-spot imaging, spectrometry instrument (Fig. 1) for measuring properties of a sample (27) has a polarization-scrambling element, such as a Lyot depolarizer (19), incorporatied between the polarization-introducing components of the system, such as the beamsplitter (17), and the microscope objective (21) of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent,l may be narrower than the wavelength resolution of the instrument.
Abstract:
A small-spot imaging, spectrometry instrument (Fig. 1) for measuring properties of a sample (27) has a polarization-scrambling element, such as a Lyot depolarizer (19), incorporatied between the polarization-introducing components of the system, such as the beamsplitter (17), and the microscope objective (21) of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent,l may be narrower than the wavelength resolution of the instrument.
Abstract:
A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described..
Abstract:
A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described.
Abstract:
A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a Lyot depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, may be narrower than the wavelength resolution of the instrument.
Abstract:
A wafer measurement station integrated within a process tool has a scatterometry instrument for measuring patterned features on wafers. A wafer handler feeds wafers between a cassette and one or more process stations of the process tool. Wafers presented to the measurement station are held on a wafer support, which may be moveable, and a scatterometry instrument has an optical measurement system that is moveable by a stage over the wafer support. A window isolates the moveable optics from the wafer. The optical measurement system are microscope-based optics forming a low NA system. The illumination spot size at the wafer is larger than a periodicity of the patterned features, and data processing uses a scattering model to analyze the optical signature of the collected light.