DEVICE AND METHOD FOR OPTICAL INSPECTION OF SEMICONDUCTOR WAFER
    1.
    发明申请
    DEVICE AND METHOD FOR OPTICAL INSPECTION OF SEMICONDUCTOR WAFER 审中-公开
    用于光电检测半导体波形的器件和方法

    公开(公告)号:WO0215238A3

    公开(公告)日:2002-10-03

    申请号:PCT/US0125196

    申请日:2001-08-10

    CPC classification number: G03F7/70625 G01N21/956

    Abstract: A wafer measurement station (19) integrated within a process tool (11) has a scatterometry instrument (35) for measuring patterned features on wafers (31). A wafer handler (17) feeds wafers between a cassette (15) and one or more process stations (13) of the process tool. Wafers presented to the measurement station are held on a wafer support (33), which may be moveable, and a scatterometry instrument has an optical measurement system (41) that is moveable by a stage (39) over the wafer support. A window (37) isolates the moveable optics from the wafer. The optical measurement system are microscope-based optics forming a low NA system. The illumination spot size at the wafer is larger than a periodicity of the patterned features, and data processing uses a scattering model to analyze the optical signature of the collected light.

    Abstract translation: 集成在处理工具(11)内的晶片测量站(19)具有用于测量晶片(31)上的图案特征的散射仪(35)。 晶片处理器(17)在处理工具的盒(15)和一个或多个处理站(13)之间馈送晶片。 提供给测量站的晶片保持在可以是可移动的晶片支撑件(33)上,并且散射仪器具有可由晶片支撑件上的台(39)移动的光学测量系统(41)。 窗口(37)将可移动光学器件与晶片隔离。 光学测量系统是形成低NA系统的基于显微镜的光学器件。 晶片上的照明光点尺寸大于图案化特征的周期,数据处理使用散射模型来分析所收集的光的光学特征。

    SMALL-SPOT SPECTROMETRY INSTRUMENT WITH REDUCED POLARIZATION
    2.
    发明申请
    SMALL-SPOT SPECTROMETRY INSTRUMENT WITH REDUCED POLARIZATION 审中-公开
    具有减少极化的小点光谱仪器

    公开(公告)号:WO0216893A3

    公开(公告)日:2002-08-29

    申请号:PCT/US0141770

    申请日:2001-08-17

    Abstract: A small-spot imaging, spectrometry instrument (Fig. 1) for measuring properties of a sample (27) has a polarization-scrambling element, such as a Lyot depolarizer (19), incorporatied between the polarization-introducing components of the system, such as the beamsplitter (17), and the microscope objective (21) of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent,l may be narrower than the wavelength resolution of the instrument.

    Abstract translation: 用于测量样品(27)的性质的小点成像光谱仪(图1)具有包括在系统的偏振引入组分之间的偏振加扰元件,例如Lyot去极化器(19),诸如 作为分束器(17)和系统的显微镜物镜(21)。 Lyot去极化器使波长偏振。 可以通过数据处理技术去除所得测量光谱中的正弦扰动,或者如果去偏振器是厚的或高度双折射的,则l可能比仪器的波长分辨率窄。

    SMALL-SPOT SPECTROMETRY INSTRUMENT WITH REDUCED POLARIZATION
    3.
    发明申请
    SMALL-SPOT SPECTROMETRY INSTRUMENT WITH REDUCED POLARIZATION 审中-公开
    具有减少极化的小点光谱仪器

    公开(公告)号:WO0216893B1

    公开(公告)日:2003-01-09

    申请号:PCT/US0141770

    申请日:2001-08-17

    Abstract: A small-spot imaging, spectrometry instrument (Fig. 1) for measuring properties of a sample (27) has a polarization-scrambling element, such as a Lyot depolarizer (19), incorporatied between the polarization-introducing components of the system, such as the beamsplitter (17), and the microscope objective (21) of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent,l may be narrower than the wavelength resolution of the instrument.

    Abstract translation: 用于测量样品(27)的性质的小点成像光谱仪(图1)具有包括在系统的偏振引入组分之间的偏振加扰元件,例如Lyot去极化器(19),诸如 作为分束器(17)和系统的显微镜物镜(21)。 Lyot去极化器使波长偏振。 可以通过数据处理技术去除所得测量光谱中的正弦扰动,或者如果去偏振器是厚的或高度双折射的,则l可能比仪器的波长分辨率窄。

    BATHLESS WAFER MEASUREMENT APPARATUS AND METHOD
    4.
    发明申请
    BATHLESS WAFER MEASUREMENT APPARATUS AND METHOD 审中-公开
    无水壶测量装置及方法

    公开(公告)号:WO0215261A2

    公开(公告)日:2002-02-21

    申请号:PCT/US0124886

    申请日:2001-08-09

    CPC classification number: B24B37/013 B24B49/02 B24B49/12

    Abstract: A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described..

    Abstract translation: 一种用于测量不需要水浴的晶片(30)的薄膜厚度特性的晶片测量装置(10,110)以及复杂的晶片处理装置的方法。 该装置包括具有用于支撑晶片的上表面(20)的卡盘(16)和周边(18)。 还包括用于测量一个或多个膜厚度性质的计量模块(50)。 测量模块布置在卡盘上表面附近并且具有测量窗口(60),其具有基本上平行于卡盘上表面布置的下表面(64),从而限定开放容积(68)。 该设备包括与开放容积通过喷嘴(70)流体连通的供水系统,用于以不会在体积内产生气泡的方式使水流过并填充该体积。 围绕卡盘的集水区(40)可用于捕获流出体积的水。 还描述了执行一个或多个晶片膜性质的测量的方法。

    Bathless wafer measurement apparatus and method

    公开(公告)号:AU7924201A

    公开(公告)日:2002-02-25

    申请号:AU7924201

    申请日:2001-08-09

    Abstract: A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described.

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