公开(公告)号：JP2001319889A

公开(公告)日：2001-11-16

申请号：JP2001097867

申请日：2001-03-30

Applicant: ST MICROELECTRONICS SA ,  KONINKL PHILIPS ELECTRONICS NV

Inventor： DE COSTER WALTER ,  LUNENBORG MEINDERT ,  INARD ALAIN ,  GUELEN JOS

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/266 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/08 ,  H01L29/10 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide an MOS transistor having a voltage threshold causing no damage on the quality by avoiding troubles in conventional technology. SOLUTION: The method for forming an active area surrounded with an insulating area in a semiconductor substrate includes steps for forming in the substrate a trench surrounding the active area, filling the trench with an insulating material to form an edge extending beyond the substrate surface at the periphery of the active area, forming a spacer at the periphery of the edge, and implanting a dopant, whereby the implantation in the area located under the spacer is less deep than in the rest of the active area.

公开(公告)号：FR2807206A1

公开(公告)日：2001-10-05

申请号：FR0004174

申请日：2000-03-31

Applicant: ST MICROELECTRONICS SA

Inventor： DE COSTER WALTER ,  LUNENBORG MEINDERT ,  INARD ALAIN ,  GUELEN JOS

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/266 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/08 ,  H01L29/10 ,  H01L29/78 ,  H01L21/334

Abstract: A method of forming an active area surrounded with an insulating area in a semiconductor substrate, including the steps of forming in the substrate a trench surrounding an active area; filling the trench with an insulating material to form an edge extending beyond the substrate surface at the periphery of the active area; forming a spacer at the periphery of said edge; and implanting a dopant, whereby the implantation in the area located under the spacer is less deep than in the rest of the active area.

公开(公告)号：DE60136026D1

公开(公告)日：2008-11-20

申请号：DE60136026

申请日：2001-03-29

Applicant: NXP BV ,  ST MICROELECTRONICS SA

Inventor： DE COSTER WALTER ,  LUNENBORG MEINDERT ,  INARD ALAIN ,  GUELEN JOS

IPC: H01L21/76 ,  H01L29/10 ,  H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/08 ,  H01L29/78

Abstract: A method of forming an active area surrounded with an insulating area in a semiconductor substrate, including the steps of forming in the substrate a trench surrounding an active area; filling the trench with an insulating material to form an edge extending beyond the substrate surface at the periphery of the active area; forming a spacer at the periphery of said edge; and implanting a dopant, whereby the implantation in the area located under the spacer is less deep than in the rest of the active area.

公开(公告)号：FR2806834B1

公开(公告)日：2003-09-12

申请号：FR0003793

申请日：2000-03-24

Applicant: ST MICROELECTRONICS SA

Inventor： INARD ALAIN ,  ZULIAN DOMINIQUE ,  LEVY DIDIER ,  LUNENBORG MEINDERT ,  DE COSTER WALTER ,  OBERLIN JEAN CLAUDE

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/78 ,  H01L21/8234

Abstract: Forming an insulating region (14) surrounding an active region (12) in a semiconductor substrate (10) involves forming a trench surrounding the active region in the substrate, filling the trench with a first material so as to create a protruding insulating zone that forms a peripheral edge around the active region, and beveling the edge of insulating region at the periphery of the active region. An Independent claim is given for a semiconductor device comprising a semiconductor substrate (10) and at least one insulating region (14) surrounding an active region (12) which is formed by the invented process.

公开(公告)号：FR2806834A1

公开(公告)日：2001-09-28

申请号：FR0003793

申请日：2000-03-24

Applicant: ST MICROELECTRONICS SA

Inventor： INARD ALAIN ,  ZULIAN DOMINIQUE ,  LEVY DIDIER ,  LUNENBORG MEINDERT ,  DE COSTER WALTER ,  OBERLIN JEAN CLAUDE

IPC: H01L21/76 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/08 ,  H01L27/108 ,  H01L29/78 ,  H01L21/8234

Abstract: Forming an insulating region (14) surrounding an active region (12) in a semiconductor substrate (10) involves forming a trench surrounding the active region in the substrate, filling the trench with a first material so as to create a protruding insulating zone that forms a peripheral edge around the active region, and beveling the edge of insulating region at the periphery of the active region. An Independent claim is given for a semiconductor device comprising a semiconductor substrate (10) and at least one insulating region (14) surrounding an active region (12) which is formed by the invented process.