公开(公告)号：IT1319037B1

公开(公告)日：2003-09-23

申请号：ITMI20002337

申请日：2000-10-27

Applicant: ST MICROELECTRONICS SRL

Inventor： KHOURI OSAMA ,  GREGORI STEFANO ,  PIERIN ANDREA ,  MICHELONI RINO ,  CORONINI SERGIO ,  TORELLI GUIDO

IPC: G11C7/06 ,  G11C11/56 ,  G11C16/28 ,  G11C27/00

Abstract: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.

公开(公告)号：ITMI20002337A1

公开(公告)日：2002-04-29

申请号：ITMI20002337

申请日：2000-10-27

Applicant: ST MICROELECTRONICS SRL

Inventor： TORELLI GUIDO ,  MICHELONI RINO ,  KHOURI OSAMA ,  PIERIN ANDREA ,  GREGORI STEFANO ,  CORONINI SERGIO

IPC: G11C7/06 ,  G11C11/56 ,  G11C16/28 ,  G11C27/00

Abstract: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.