公开(公告)号：ITRM20040445A1

公开(公告)日：2004-12-17

申请号：ITRM20040445

申请日：2004-09-17

Applicant: ST MICROELECTRONICS SRL

Inventor： GELMI ILARIA ,  GERMANI GIOVANNI ,  MONTANINI PIETRO ,  MOTTURA MARTA

公开(公告)号：DE69817518D1

公开(公告)日：2003-10-02

申请号：DE69817518

申请日：1998-04-30

Applicant: ST MICROELECTRONICS SRL

Inventor： MONTANINI PIETRO ,  FERRERA MARCO ,  CASTOLDI LAURA ,  GELMI ILARIA

IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01L9/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L49/00

Abstract: The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region (6) of silicon oxide on a substrate (1) of semiconductor material; growing a pseudo-epitaxial layer (8); forming an electronic circuit (10-13, 18); depositing a silicon carbide layer (21); defining photolithographycally the silicon carbon layer so as to form an etching mask (23) containing the topography of a microstructure (27) to be formed; with the etching mask (23), forming trenches (25) in the pseudo-epitaxial layer (8) as far as the sacrificial region (6) so as to laterally define the microstructure; and removing the sacrificial region (6) through the trenches (25).

公开(公告)号：ITTO20090616A1

公开(公告)日：2011-02-06

申请号：ITTO20090616

申请日：2009-08-05

Applicant: ST MICROELECTRONICS SRL

Inventor： CAMPEDELLI ROBERTO ,  CORONA PIETRO ,  GELMI ILARIA ,  LOSA STEFANO