Abstract:
PROBLEM TO BE SOLVED: To provide a controlled erasing method in a flash EEPROM device which does not require structural change of memory. SOLUTION: A controlled erasing method comprises at least a step (40) of supplying at least one erase pulse to cell of memory array, a step of comparing a threshold value voltage of cell erased with a certain lower threshold value, a step of performing selectively soft programming to the erased cell having the threshold value voltage lower than the lower threshold value voltage and a step (42) of verifying that the erased cell has the threshold value higher than the lower threshold value. When the erased cells of the predetermined number, which is at least one, have the threshold value higher than the first threshold value, only one erase pulse is given to all cells (44), and the selective soft programming and verify step are repeated.
Abstract:
The charge injection circuit of this invention comprises at least one pair of floating gate MOS transistors (M1,M2) having source and drain terminals which are coupled together and to an injection node (ND), and at least one corresponding pair of generators (G1,G2) of substantially step-like voltage signals (S1,S2) having an initial value and a final value, and having outputs respectively coupled to the control terminals of said transistors (M1,M2); the signal generators (G1,G2) being such that the initial value of a first (S1) of the signals is substantially the equal of the final value of a second (S2) of the signals, and that the final value of the first signal (S1) is substantially the equal of the initial value of the second signal (S2).
Abstract:
An input structure (1) for associative memories, including an array of elementary cells (2), a number of input lines (20), a number of output lines (30), a number of address lines (40), and a number of enabling lines (50). Each elementary cell (2) is formed by a D type latch (3) having a data input connected to one of the address lines (40) and an enabling input connected to one of the enabling lines (50), and by a switch (4) connected between an input line and an output line, and having a control input connected to the output of a respective latch to selectively connect the respective input line (20) and output line (30) according to the data stored in the latch.
Abstract:
The present invention relates to a digital-to-analog converter having a plurality of inputs (B0,B1,B2,B3) for digital signals and an output (OUT) for an analog signal, and comprising a current amplification circuit (AMP) having an input (ND) and an output coupled to the converter output; and a plurality of floating gate MOS transistors (M01, M11, M21, M31) corresponding to the plurality of converter inputs and having their source terminals coupled together and to a first reference (GND) of potential, drain terminals coupled together and to the input (ND) of the amplification circuit (AMP), and control terminals coupleable, under control from the inputs of the plurality, to different references (GND,VCC) of potential having selected fixed values.