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公开(公告)号:JP2796257B2
公开(公告)日:1998-09-10
申请号:JP32565594
申请日:1994-12-27
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , SABATINI MARCO
IPC: H01L21/8247 , H01L29/10 , H01L29/788 , H01L29/792
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公开(公告)号:JPH07326680A
公开(公告)日:1995-12-12
申请号:JP32565594
申请日:1994-12-27
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , SABATINI MARCO
IPC: H01L21/8247 , H01L29/10 , H01L29/788 , H01L29/792
Abstract: PURPOSE: To obtain a very small sized capacitive element which has a nonlinear characteristic and is capable of programming in an analog mode. CONSTITUTION: A flash EEPROM memory cell 30 is a nonvolatile memory cell includes a 2 level polycrystalline silicon, and a source region 38, a drain region 31, a channel region 34 between the source region and the drain region, a floating gate 33, and a control gate 32, the channel region extending to two transversal zone below the floating gate and the control gate and perpendicularly to a source/drain direction.
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公开(公告)号:DE69635660D1
公开(公告)日:2006-02-02
申请号:DE69635660
申请日:1996-09-30
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , ROLANDI PIER LUIGI , SABATINI MARCO
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公开(公告)号:DE69628165D1
公开(公告)日:2003-06-18
申请号:DE69628165
申请日:1996-09-30
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , LEONG PHILIP , ROLANDI PIER LUIGI , SABATINI MARCO
IPC: H03M1/74
Abstract: The present invention relates to a digital-to-analog converter having a plurality of inputs (B0,B1,B2,B3) for digital signals and an output (OUT) for an analog signal, and comprising a current amplification circuit (AMP) having an input (ND) and an output coupled to the converter output; and a plurality of floating gate MOS transistors (M01, M11, M21, M31) corresponding to the plurality of converter inputs and having their source terminals coupled together and to a first reference (GND) of potential, drain terminals coupled together and to the input (ND) of the amplification circuit (AMP), and control terminals coupleable, under control from the inputs of the plurality, to different references (GND,VCC) of potential having selected fixed values.
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公开(公告)号:DE69627654D1
公开(公告)日:2003-05-28
申请号:DE69627654
申请日:1996-09-30
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , ROLANDI PIER LUIGI , SABATINI MARCO
IPC: H03M1/74
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公开(公告)号:DE69613983D1
公开(公告)日:2001-08-23
申请号:DE69613983
申请日:1996-10-30
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , LEONG PHILIP , ONORATO MARCO , ROLANDI PIER LUIGI , SABATINI MARCO
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公开(公告)号:DE69629029T2
公开(公告)日:2004-06-03
申请号:DE69629029
申请日:1996-12-05
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , ROLANDI PIER LUIGI , SABATINI MARCO
IPC: G11C29/00
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公开(公告)号:DE69629029D1
公开(公告)日:2003-08-14
申请号:DE69629029
申请日:1996-12-05
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , ROLANDI PIER LUIGI , SABATINI MARCO
IPC: G11C29/00
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公开(公告)号:DE69613983T2
公开(公告)日:2002-04-04
申请号:DE69613983
申请日:1996-10-30
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , CANEGALLO ROBERTO , CHINOSI MAURO , GOZZINI GIOVANNI , LEONG PHILIP , ONORATO MARCO , ROLANDI PIER LUIGI , SABATINI MARCO
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公开(公告)号:DE69314964D1
公开(公告)日:1997-12-04
申请号:DE69314964
申请日:1993-12-31
Applicant: ST MICROELECTRONICS SRL
Inventor: KRAMER ALAN , SABATINI MARCO
IPC: H01L21/8247 , H01L29/10 , H01L29/788 , H01L29/792 , G11C27/00
Abstract: Non-volatile memory cell with double level of polycrystalline silicon comprising a source region (38), a drain region (31), a channel region (34) between said source and drain regions, a floating gate (33), and a control gate (32) in which the channel region area extends into two lateral zones beneath the two gates and perpendicular to the source-drain direction.
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