公开(公告)号：JPH11273374A

公开(公告)日：1999-10-08

申请号：JP1407899

申请日：1999-01-22

Applicant: St Microelectronics Srl ,  エスティーマイクロエレクトロニクス エス.アール.エル

Inventor： PASOTTI MARCO ,  CANEGALLO ROBERTO ,  CHIOFFI ERNESTINA ,  GOZZINI GIOVANNI ,  LHERMET FRANK ,  ROLANDI PIERLUIGI

IPC: G11C16/02 ,  G11C11/56 ,  G11C16/16 ,  G11C16/34 ,  G11C27/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: G11C16/3409 ,  G11C11/56 ,  G11C11/5621 ,  G11C11/5635 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3445 ,  G11C27/005

Abstract: PROBLEM TO BE SOLVED: To provide a controlled erasing method in a flash EEPROM device which does not require structural change of memory. SOLUTION: A controlled erasing method comprises at least a step (40) of supplying at least one erase pulse to cell of memory array, a step of comparing a threshold value voltage of cell erased with a certain lower threshold value, a step of performing selectively soft programming to the erased cell having the threshold value voltage lower than the lower threshold value voltage and a step (42) of verifying that the erased cell has the threshold value higher than the lower threshold value. When the erased cells of the predetermined number, which is at least one, have the threshold value higher than the first threshold value, only one erase pulse is given to all cells (44), and the selective soft programming and verify step are repeated.

Abstract translation: 要解决的问题：在不需要结构性改变存储器的快闪EEPROM装置中提供受控的擦除方法。 解决方案：受控擦除方法至少包括向存储器阵列的单元提供至少一个擦除脉冲的步骤（40），将擦除的单元的阈值电压与某个较低阈值进行比较的步骤，选择性地执行的步骤 对具有低于下阈值电压的阈值电压的擦除单元进行软编程;以及验证擦除单元具有高于下阈值的阈值的步骤（42）。 当预定数量（至少为1）的擦除单元具有高于第一阈值的阈值时，仅向所有单元（44）提供一个擦除脉冲，并重复选择性软编程和验证步骤。

公开(公告)号：DE69828966D1

公开(公告)日：2005-03-17

申请号：DE69828966

申请日：1998-09-15

Applicant: ST MICROELECTRONICS SRL

Inventor： PASOTTI MARCO ,  LHERMET FRANK ,  ROLANDI PIER LUIGI

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/06

Abstract: The method includes restoring the charge lost from memory cells, such as to restore the original voltage levels, within a time equivalent to the retention time. The decision concerning when the memory is to be restored is taken for example when the memory is switched on, based on the time elapsed since the previous programming/restoration, or based on the difference between the present threshold voltage of the reference cells and the original threshold voltage of the (suitably stored) reference cells, or when predetermined operating conditions occur. This makes it possible to prolong the life of nonvolatile memories, in particular of multilevel type, wherein the retention time decreases as the number of levels (bits/cell) is increased.

公开(公告)号：DE69824386D1

公开(公告)日：2004-07-15

申请号：DE69824386

申请日：1998-01-22

Applicant: ST MICROELECTRONICS SRL

Inventor： PASOTTI MARCO ,  CANEGALLO ROBERTO ,  CHIOFFI ERNESTINA ,  GUAITINI GIOVANNI ,  LHERMET FRANK ,  ROLANDI PIERLUIGI

IPC: G11C16/02 ,  G11C11/56 ,  G11C16/16 ,  G11C16/34 ,  G11C27/00 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C16/00 ,  G11C16/06

公开(公告)号：ITTO981003A1

公开(公告)日：2000-05-28

申请号：ITTO981003

申请日：1998-11-27

Applicant: ST MICROELECTRONICS SRL

Inventor： CANEGALLO ROBERTO ,  GUAITINI GIOVANNI ,  LHERMET FRANK ,  PASOTTI MARCO ,  ROLANDI PIER LUIGI

IPC: G06K20060101 ,  G11C11/56 ,  G11C16/12 ,  G11C27/00

公开(公告)号：IT1303204B1

公开(公告)日：2000-10-30

申请号：ITTO981003

申请日：1998-11-27

Applicant: ST MICROELECTRONICS SRL

Inventor： CANEGALLO ROBERTO ,  PASOTTI MARCO ,  GUAITINI GIOVANNI ,  LHERMET FRANK ,  ROLANDI PIER LUIGI

IPC: G11C11/56 ,  G11C16/12 ,  G11C27/00

公开(公告)号：ITTO981003D0

公开(公告)日：1998-11-27

申请号：ITTO981003

申请日：1998-11-27

Applicant: ST MICROELECTRONICS SRL

Inventor： CANEGALLO ROBERTO ,  PASOTTI MARCO ,  GUAITINI GIOVANNI ,  LHERMET FRANK

IPC: G11C11/56 ,  G11C16/12 ,  G11C27/00