公开(公告)号：JPH076182A

公开(公告)日：1995-01-10

申请号：JP29335193

申请日：1993-11-24

Applicant: ST MICROELECTRONICS SRL

Inventor： VERAMBALLY RAJAMOHAN ,  BARONI ANDREA ,  CARRO LUIGI ,  MASTRODOMENICO GIOVANNI ,  TALIERCIO MICHELE ,  CAPOCELLI PIERO

IPC: G06F17/50 ,  G11C7/14 ,  G11C7/22

Abstract: PURPOSE: To provide a single-port RAM generator having such structural and functional features that give a change to a parameter introduced by a user. CONSTITUTION: A single-port RAM generator 1 includes an SRAM matrix 2 and a self-timer 3 and the timer 3 has dummy rows 7 and dummy columns 9. The rows 7 and columns 9 of the timer 3 respectively have loads equivalent to those of one word line and one bit column and the dummy columns are discharged at speeds faster than those of the dummy columns.

公开(公告)号：ITMI20042374A1

公开(公告)日：2005-03-14

申请号：ITMI20042374

申请日：2004-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： CAIMI CARLO ,  KHOURI OSAMA ,  MASTRODOMENICO GIOVANNI

公开(公告)号：DE602005017461D1

公开(公告)日：2009-12-17

申请号：DE602005017461

申请日：2005-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： KHOURI OSAMA ,  CAIMI CARLO ,  MASTRODOMENICO GIOVANNI ,  CAPRARA PAOLO

IPC: G11C16/04 ,  H01L21/8247 ,  H01L27/115

公开(公告)号：DE602005017113D1

公开(公告)日：2009-11-26

申请号：DE602005017113

申请日：2005-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： KHOURI OSAMA ,  CAIMI CARLO ,  MASTRODOMENICO GIOVANNI

IPC: G11C16/04 ,  H01L21/8247 ,  H01L27/115

Abstract: Flash NAND memory electronic device comprising non-volatile cells and having a high integration density and relative programming method. Memory device (1) of the type integrated on a semiconductor substrate (3) and comprising one matrix (6) with rows or Word lines (4) and columns or Bit lines (5) organised in sectors (7) of memory cells (2). The device (1) comprising between said cells (2) of said opposite Word lines (4) belonging to at least one of said sectors (7) of said matrix (6) a lateral coating (15) along the direction of the Bit lines (5) having at least one conductive layer (16) with a contact terminal (9) being selectively biased or floating during each program, read or erase operation, each cell belonging to said sector (7).

公开(公告)号：ITMI20042373A1

公开(公告)日：2005-03-14

申请号：ITMI20042373

申请日：2004-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： CAIMI CARLO ,  CAPRARA PAOLO ,  KHOURI OSAMA ,  MASTRODOMENICO GIOVANNI