NON-VOLATILE MEMORY HAVING BURST MODE READING FUNCTION AND PAGE MODE READING FUNCTION DURING INTERRUPTION PERIOD OF ELECTRIC CHANGE OPERATION

    公开(公告)号:JP2001057087A

    公开(公告)日:2001-02-27

    申请号:JP2000227222

    申请日:2000-07-27

    Abstract: PROBLEM TO BE SOLVED: To obtain a memory having a burst mode reading function and a page mode reading function while erasing or programming one sector in a semiconductor memory having two or more memory sectors S1-S9. SOLUTION: This semiconductor memory is provided with first control circuit means 4, 6 for controlling the electrical change operation of contents of a memory. The first control circuit means 4 (6) can execute selectively the operation for changing electrically one content of a memory sector and can interrupt the execution so as to be possible to reading-access the other memory sectors. The memory is characterized by providing second control circuit means 8, 6 which can permit burst mode reading or page mode reading operation for reading contents of the other memory sectors.

    4.
    发明专利
    未知

    公开(公告)号:DE69923289D1

    公开(公告)日:2005-02-24

    申请号:DE69923289

    申请日:1999-04-28

    Abstract: Semiconductor device comprising at least two pads (101, 102; 103, 104) for the input of external signals and/or for the output of signals from said semiconductor device, at least two uncoupling buffers (201, 202; 203, 204) each connected to each one of said pads, at least one multiplexer (10; 20) connected to said pads (101, 102; 103, 104) by means of said uncoupling buffers (201, 202; 203, 204) and at least one memory element (4; 5) suitable to generate a configuration signal (C ) operating on said multiplexer (10; 20) and said uncoupling buffers (201, 202; 203, 204) to selectively enable one or the other of said pads (101, 102; 103, 104).

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