公开(公告)号：JP2642904B2

公开(公告)日：1997-08-20

申请号：JP13179495

申请日：1995-05-30

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVANELLI ENRICO ,  ZULLINO LUCIA

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06

公开(公告)号：JPH0878630A

公开(公告)日：1996-03-22

申请号：JP13179495

申请日：1995-05-30

Applicant: ST MICROELECTRONICS SRL

Inventor： RAVANELLI ENRICO ,  ZULLINO LUCIA

IPC: H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06

Abstract: PURPOSE: To provide a small area protective device, having high efficiency in energy and response speed, which protects a semiconductor MOS integrated circuit from electrostatic discharges on an input/output terminal. CONSTITUTION: A first region 15 and a third region 20 of a second conductivity- type N are separately protruded into a first conductivity-type P surface zones 12 and 13 from the main surface of a wafer, a second region 18 is protruded into a first region 15, and a SCR, having terminals 22 and 24 of a conductive material, which is brought into ohmic contact with the second region 18 and the third region 20, is provided. In the device, having a reverse breakdown potential, in which the joint part of the first region 15 and the surface zones 12 and 13 prescribe the starting potential of the SCR, a conductive layer 17 is insulated from the first region 15 and is extended crossing the edge part of the conductive layer 17. The reverse breakdown potential of the joint part can be decreased to the prescribed value, and polarity can be given to the conductive layer 17, so that the distribution of the electric field on the junction part can be changed.

公开(公告)号：JPH0613622A

公开(公告)日：1994-01-21

申请号：JP5523593

申请日：1993-02-18

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/784

Abstract: PURPOSE: To provide a VDMOS transistor(TR), capable of sharply increasing the effect of a by planar field effect plate, without lowering an electric performance characteristic. CONSTITUTION: A field separating diffusion part 5 is formed under a strip 1 of a field separating layer and electrically connected to the source region 6 of a TR. Consequently, breakdown voltage can be increased without increasing internal resistor.

公开(公告)号：DE69315239T2

公开(公告)日：1998-03-19

申请号：DE69315239

申请日：1993-02-11

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/772 ,  H01L29/08

Abstract: The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.

公开(公告)号：ITMI920344D0

公开(公告)日：1992-02-18

申请号：ITMI920344

申请日：1992-02-18

Applicant: ST MICROELECTRONICS SRL ,  SGS THOMSON MICROELECTRONICS

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L

Abstract: The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.

公开(公告)号：DE69315239D1

公开(公告)日：1998-01-02

申请号：DE69315239

申请日：1993-02-11

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/772 ,  H01L29/08

Abstract: The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.

公开(公告)号：IT1254799B

公开(公告)日：1995-10-11

申请号：ITMI920344

申请日：1992-02-18

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L

Abstract: The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.