公开(公告)号：ITMI920344D0

公开(公告)日：1992-02-18

申请号：ITMI920344

申请日：1992-02-18

Applicant: ST MICROELECTRONICS SRL ,  SGS THOMSON MICROELECTRONICS

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L

Abstract: The breakdown voltage of a VDMOS transistor is markedly increased without depressing other electrical characteristics of the device by tying the potential of a field-isolation diffusion, formed under the edge portion of a strip of field oxide separating a matrix of source cells from a drain diffusion, to the source potential of the transistor. This may be achieved by extending a body region of a peripheral source cell every given number of peripheral cells facing the strip of field-isolation structure until it intersects said field-isolation diffusion. By so connecting one peripheral source cell every given number of cells, the actual decrement of the overall channel width of the integrated transistor is negligible, thus leaving unaltered the electrical characteristics of the power transistor.

公开(公告)号：JPH0613622A

公开(公告)日：1994-01-21

申请号：JP5523593

申请日：1993-02-18

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  GALBIATI MARIA PAOLA ,  ZULLINO LUCIA

IPC: H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/784

Abstract: PURPOSE: To provide a VDMOS transistor(TR), capable of sharply increasing the effect of a by planar field effect plate, without lowering an electric performance characteristic. CONSTITUTION: A field separating diffusion part 5 is formed under a strip 1 of a field separating layer and electrically connected to the source region 6 of a TR. Consequently, breakdown voltage can be increased without increasing internal resistor.

公开(公告)号：JP2744592B2

公开(公告)日：1998-04-28

申请号：JP31187094

申请日：1994-12-15

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  MANZINI STEFANO ,  CAVIONI TIZIANA

IPC: H01L21/8247 ,  H01L27/06 ,  H01L27/092 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

公开(公告)号：JPH07254687A

公开(公告)日：1995-10-03

申请号：JP31187094

申请日：1994-12-15

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTIERO CLAUDIO ,  MANZINI STEFANO ,  CAVIONI TIZIANA

IPC: H01L21/8247 ,  H01L27/06 ,  H01L27/092 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To provide an integrated circuit structure, capable of forming a hybrid type integrated circuit having at least one EPROM without adding a special working step for the hybrid type integrated circuit regarding the integrated circuit. CONSTITUTION: An EPROM cell has an active region 18, and the region is formed by the same operation as the formation of a P-type region 17, in which an N -channel MOS transistor is housed. Likewise, each region of sources and drains is formed by the same operation as the formation of the source regions and drain regions 31 of the transistors, control electrodes 15 consisting of N - type regions are shaped by the same operation as the formation of deep regions 14 communicating each N -type embedded region, and floating gate electrodes 24 formed of one conductive material layer are formed by the same operation as the formation of the gate electrodes 23 of the transistors in an integrated circuit.

公开(公告)号：JPS61102782A

公开(公告)日：1986-05-21

申请号：JP23854285

申请日：1985-10-23

Applicant: Sgs Thomson Microelectronics

Inventor： CONTIERO CLAUDIO

IPC: H01L29/78 ,  H01L21/225 ,  H01L21/336

CPC classification number: H01L29/66712 ,  H01L21/2257

公开(公告)号：DE69410251T2

公开(公告)日：1998-10-01

申请号：DE69410251

申请日：1994-06-20

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： DIAZZI CLAUDIO ,  MURARI BRUNO ,  MASTROMATTEO UBALDO ,  CONTIERO CLAUDIO

IPC: H01L21/76 ,  H01L21/822 ,  H01L23/31 ,  H01L23/58 ,  H01L27/04

公开(公告)号：IT8424139D0

公开(公告)日：1984-12-20

申请号：IT2413984

申请日：1984-12-20

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： CONTIERO CLAUDIO ,  IANNUZZI GIULIO ,  SANTI GIORGIO DE ,  ANDREANI FABRIZIO

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/532 ,  H01L

公开(公告)号：IT1235843B

公开(公告)日：1992-11-03

申请号：IT8362689

申请日：1989-06-14

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： CONTIERO CLAUDIO ,  GALBIATI PAOLA ,  ZULLINO LUCIA

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/8234 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/092 ,  H01L29/732 ,  H01L29/78 ,  H01L

公开(公告)号：IT1213261B

公开(公告)日：1989-12-14

申请号：IT2413984

申请日：1984-12-20

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： CONTIERO CLAUDIO ,  IANNUZZI GIULIO ,  SANTI GIORGIO DE ,  ANDREANI FABRIZIO

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/532 ,  H01L

公开(公告)号：IT8424126D0

公开(公告)日：1984-12-18

申请号：IT2412684

申请日：1984-12-18

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： CONTIERO CLAUDIO ,  GALBIATI PAOLA

IPC: H01L27/092 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/088 ,  H01L29/78 ,  C07C

Abstract: The disclosed bridge circuit is fabricated using power MOS technology. Common terminals of the bridge circuit are integrated into common regions in the implementation. Electrodes, typically coupled together in the bridge circuit, are implemented by a shared conducting region in the integrated circuit of the semiconductor chip. By integrating the elements of the circuit, less area of the semiconductor chip is required as compared to an implementation involving 4 (four) discrete elements. Diodes are fabricated across the transistors to protect the elements against reverse biasing.