公开(公告)号：IT201600121618A1

公开(公告)日：2018-05-30

申请号：IT201600121618

申请日：2016-11-30

Applicant: ST MICROELECTRONICS SRL ,  ST MICROELECTRONICS ROUSSET

Inventor： GRANDE FRANCESCA ,  LA ROSA FRANCESCO ,  LO GIUDICE GIANBATTISTA ,  MATRANGA GIOVANNI

IPC: G11C16/34 ,  G11C16/16

公开(公告)号：ITMI20110309A1

公开(公告)日：2012-08-29

申请号：ITMI20110309

申请日：2011-02-28

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  DI MARTINO ALBERTO JOSE ,  GIAQUINTA MARIA ,  MATRANGA GIOVANNI

公开(公告)号：ITMI20110306A1

公开(公告)日：2012-08-29

申请号：ITMI20110306

申请日：2011-02-28

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  DI MARTINO ALBERTO JOSE ,  GIAQUINTA MARIA ,  MATRANGA GIOVANNI

公开(公告)号：IT1404186B1

公开(公告)日：2013-11-15

申请号：ITMI20110306

申请日：2011-02-28

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  DI MARTINO ALBERTO JOSE ,  MATRANGA GIOVANNI ,  GIAQUINTA MARIA

IPC: G05F1/575

公开(公告)号：ITMI20062068A1

公开(公告)日：2008-04-28

申请号：ITMI20062068

申请日：2006-10-27

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  DE COSTANTINI DIEGO ,  LO GIUDICE GIANBATTISTA ,  MATRANGA GIOVANNI ,  MICCICHE MARIO ,  UCCIARDELLO CARMELO

公开(公告)号：ITMI20120595A1

公开(公告)日：2013-10-13

申请号：ITMI20120595

申请日：2012-04-12

Applicant: ST MICROELECTRONICS SRL

Inventor： GRASSO ROSARIOROBERTO ,  MATRANGA GIOVANNI ,  MICCICHE MARIO

公开(公告)号：IT1319597B1

公开(公告)日：2003-10-20

申请号：ITMI20002763

申请日：2000-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  LA ROCCA ROSANNA MARIA ,  MATRANGA GIOVANNI

IPC: G11C16/28

Abstract: A reading circuit is provided for reading a memory cell. The reading circuit includes a reference current source, a memory cell biased between its first and second terminals at a predetermined voltage, comparison means for comparing a current flowing in the memory cell with the reference current, and a control gate voltage source coupled to a third terminal of the memory cell. The control gate voltage source includes a virgin memory cell that is biased between two terminals with a voltage of equal value to the biasing voltage of the memory cell. The control gate voltage source produces a control gate voltage at another terminal of the virgin memory cell. In one preferred embodiment, the memory cell and the virgin memory cell are EEPROM cells.

公开(公告)号：DE69933670D1

公开(公告)日：2006-11-30

申请号：DE69933670

申请日：1999-08-31

Applicant: ST MICROELECTRONICS SRL

Inventor： MATRANGA GIOVANNI ,  LO COCO LUCA ,  COMPAGNO GIUSEPPE

IPC: G01K7/01 ,  G01K3/00

Abstract: This invention relates to a CMOS technology temperature sensor of a type which comprises a first circuit portion (2) arranged to generate an electric voltage signal whose value increases with the temperature to be sensed, and a second circuit portion (3) arranged to generate an electric voltage signal whose value decreases with the temperature to be sensed. A comparator (4) is provided as an output stage for comparing the values of both voltage signals. Advantageously, the generator element of the second circuit portion (3) is a vertical bipolar transistor connected in a diode configuration.

公开(公告)号：ITMI20002763A1

公开(公告)日：2002-06-20

申请号：ITMI20002763

申请日：2000-12-20

Applicant: ST MICROELECTRONICS SRL

Inventor： CONTE ANTONINO ,  LA ROCCA ROSANNA MARIA ,  MATRANGA GIOVANNI

IPC: G11C16/28

Abstract: A reading circuit is provided for reading a memory cell. The reading circuit includes a reference current source, a memory cell biased between its first and second terminals at a predetermined voltage, comparison means for comparing a current flowing in the memory cell with the reference current, and a control gate voltage source coupled to a third terminal of the memory cell. The control gate voltage source includes a virgin memory cell that is biased between two terminals with a voltage of equal value to the biasing voltage of the memory cell. The control gate voltage source produces a control gate voltage at another terminal of the virgin memory cell. In one preferred embodiment, the memory cell and the virgin memory cell are EEPROM cells.