公开(公告)号：EP3496153A1

公开(公告)日：2019-06-12

申请号：EP18206678.7

申请日：2018-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： ZANETTI, Edoardo ,  RASCUNA', Simone ,  SAGGIO, Mario Giuseppe ,  GUARNERA, Alfio ,  FRAGAPANE, Leonardo ,  TRINGALI, Cristina

IPC: H01L29/872 ,  H01L21/329 ,  H01L29/06 ,  H01L29/16 ,  H01L29/78

Abstract: A manufacturing method of an electronic device (50), comprising the steps of: forming a drift layer (32) of an N type; forming a trench (38) in the drift layer (32); forming an edge-termination structure (42) alongside the trench (38) by implanting dopant species of a P type; and forming a depression region between the trench (38) and the edge-termination structure (42) by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection (32c) with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：EP4376089A1

公开(公告)日：2024-05-29

申请号：EP23209667.7

申请日：2023-11-14

Applicant: STMicroelectronics S.r.l.

Inventor： FRAGAPANE, Leonardo

IPC: H01L29/06 ,  H01L29/12 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/0619 ,  H01L29/0692

Abstract: An integrated device (11) includes: a semiconductor structural layer (5), including silicon carbide and having a first conductivity type; a power device (2) integrated in the structural layer (5); and an edge termination structure (3), extending in a ring around the power device (2) and having a second conductivity type. The edge termination structure (3) includes a plurality of ring structures (10, 11, 12) each arranged around the power device (2) and in contiguous pairs. At least a first one (10, 11) of the ring structures (10, 11, 12) comprises a transition region (10b, 11b) contiguous to a second one (11, 12) of the ring structures (10, 11, 12). The transition region (10b, 11b) includes connection regions (10c, 11c), having the second conductivity type, connected to the second one (11, 12) of the ring structures (10, 11, 12) and alternating with charge control regions (10d, 11d) having the first conductivity type.