公开(公告)号：EP3496153A1

公开(公告)日：2019-06-12

申请号：EP18206678.7

申请日：2018-11-16

Applicant: STMicroelectronics S.r.l.

Inventor： ZANETTI, Edoardo ,  RASCUNA', Simone ,  SAGGIO, Mario Giuseppe ,  GUARNERA, Alfio ,  FRAGAPANE, Leonardo ,  TRINGALI, Cristina

IPC: H01L29/872 ,  H01L21/329 ,  H01L29/06 ,  H01L29/16 ,  H01L29/78

Abstract: A manufacturing method of an electronic device (50), comprising the steps of: forming a drift layer (32) of an N type; forming a trench (38) in the drift layer (32); forming an edge-termination structure (42) alongside the trench (38) by implanting dopant species of a P type; and forming a depression region between the trench (38) and the edge-termination structure (42) by digging the drift layer. The steps of forming the depression region and the trench are carried out at the same time. The step of forming the depression region comprises patterning the drift layer to form a structural connection (32c) with the edge-termination structure having a first slope, and the step of forming the trench comprises etching the drift layer to define side walls of the trench, which have a second slope steeper than the first slope.

公开(公告)号：EP3660923A1

公开(公告)日：2020-06-03

申请号：EP19212334.7

申请日：2019-11-28

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  TRINGALI, Cristina

IPC: H01L29/45 ,  H01L21/441 ,  H01L21/18 ,  H01L21/285

Abstract: A method for manufacturing an ohmic contact (22) for a HEMT device (1), comprising the steps of: forming a photoresist layer (28), on a semiconductor body (5) comprising a heterostructure (17); forming, in the photoresist layer (28), an opening (35), through which a surface region (19) of the semiconductor body (5) is exposed at said heterostructure (17); etching the surface region (19) of the semiconductor body (5) using the photoresist layer (28) as etching mask to form a trench (42) in the heterostructure (17); depositing one or more metal layers in said trench (42) and on the photoresist layer (28); and carrying out a process of lift-off of the photoresist layer (28) .

公开(公告)号：EP3817032A1

公开(公告)日：2021-05-05

申请号：EP20202878.3

申请日：2020-10-20

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  TRINGALI, Cristina

IPC: H01L21/285 ,  H01L29/20 ,  H01L29/47 ,  H01L29/778

Abstract: Method for manufacturing a HEMT device (1) including the steps of: forming, on a heterostructure (3), a single dielectric layer (7); forming a through opening (9) through the dielectric layer; and forming a gate electrode (8) at the through opening. Forming the gate electrode includes: forming a sacrificial structure (34); depositing by evaporation a Ni layer (20); carrying out a lift-off of the sacrificial structure; depositing a WN layer (22) by sputtering; and depositing an Al layer (24). The WN layer forms a barrier against the diffusion of Al atoms towards the heterostructure.