公开(公告)号：EP1427010A1

公开(公告)日：2004-06-09

申请号：EP02425742.0

申请日：2002-11-29

Applicant: STMicroelectronics S.r.l.

Inventor： Renna, Crocifisso Marco Antonio ,  La Magna, Luigi ,  Lorenti, Simona ,  Coffa, Salvatore

IPC: H01L21/764 ,  H01L21/3063 ,  H01L21/762 ,  H01L29/06 ,  B81B1/00 ,  B81C1/00 ,  B81B3/00

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A method for manufacturing a semiconductor substrate (7) of a first concentration type is described, which comprises at least a buried insulating cavity (10b, 10d), comprising the following steps:

form on the semiconductor substrate (7) a plurality of trenches (8, 10),
form a surface layer (7a, 9a) on the semiconductor substrate in order to close superficially the plurality of trenches (8, 10) forming in the meantime at least a buried cavity (10b) in correspondence with the surface-distal end of the trenches (8, 10).

Devices manufactured with the method according to the invention are also described.

Abstract translation: 一种用于制造（7）的第一浓度类型的，描述了一种半导体衬底的方法，其包括至少一个掩埋绝缘腔（10B，10D）包括以下步骤：形式在半导体基片（7）的沟槽的多个（ 8，10），形成在半导体衬底的表面层（图7A，图9A）以闭合表面上的沟槽（8的多元性，10）（图10b），其与所述表面对应的平均时间中形成至少一个掩埋空腔 沟槽（8，10）的远端。 因此与方法雅丁本发明制造设备进行了描述。

公开(公告)号：EP2280412A2

公开(公告)日：2011-02-02

申请号：EP10184095.7

申请日：2002-11-29

Applicant: STMicroelectronics S.r.l.

Inventor： Renna, Crocifisso Marco Antonio ,  La Magna, Luigi ,  Lorenti, Simona ,  Coffa, Salvatore

IPC: H01L21/764 ,  H01L21/3063 ,  H01L21/762 ,  H01L29/06 ,  B81C1/00

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A semiconductor substrate comprising at least a buried insulating cavity (10b, 10d) and comprising:
- a semiconductor substrate (7) having a first type of concentration and having a plurality of trenches (8, 10),
- a surface layer (7a, 9a) on said semiconductor substrate (7) in order to close superficially said plurality of trenches (8, 10) forming said at least a buried insulating cavity (10b, 10d);
- a first semiconductor material layer (9) on said surface layer (7a, 9a) having the same first type of concentration as said semiconductor substrate (7), said first semiconductor material layer (9) comprising at least a trench (11) which is in communication with said at least a buried insulating cavity (10b, 10d).

Abstract translation: 1.一种半导体衬底，包括至少一个掩埋绝缘腔（10b，10d），并且包括：具有第一类型的半导体衬底（7）并具有多个沟槽（8,10）， - 表面层（7a， 以形成所述至少一个掩埋绝缘腔（10b，10d）的所述多个沟槽（8,10）的表面封闭; - 在所述表面层（7a，9a）上具有与所述半导体衬底（7）相同的第一类型的第一半导体材料层（9），所述第一半导体材料层（9）至少包括沟槽（11），所述沟槽 与所述至少一个掩埋绝缘腔（10b，10d）连通。

公开(公告)号：EP1798799A1

公开(公告)日：2007-06-20

申请号：EP05425892.6

申请日：2005-12-16

Applicant: STMicroelectronics S.r.l.

Inventor： Siciliano, Simone Angelo ,  La Magna, Luigi ,  Leonardi, Salvatore

IPC: H01M8/10 ,  H01M8/24 ,  B81C1/00 ,  B81B7/02

CPC classification number: H01M8/1097 ,  H01M8/0271 ,  H01M8/04089 ,  H01M8/241 ,  H01M8/2425 ,  H01M2008/1095

Abstract: A planarly integrated fuel cell structure, formed in a region (2) preliminarily rendered pervious to fluid flow and electrically nonconductive of the monocrystalline silicon substrate (1), has
at least a pair of parallel channels, an anode feed channel (3) and a cathode feed channel (4), respectively, extending in the oxidized porous oxidized silicon region and defining a central oxidized porous silicon ridge (5) therebetween;
a dielectric cap (B, P, 6b, 17) over said channelled oxidized porous silicon region (2), having at least an inlet and an outlet hole (11-12, 13-14) formed therethrough in correspondence of one end and the opposite end, respectively, of each one of the parallel channels (3, 4) underneath, for separately circulating a fluid fuel in the anode channel (3) and air or other oxygen containing mixture in the cathode channel (4);
a pair of parallel spaced solid metal cell electrodes (7, 8) extending over the top surface of said central oxidized porous silicon ridge (5) defined between said parallel channels (3, 4), for the whole length of the channels;
cathodically deposited uninterrupted electrically conductive threads (7', 8') of a catalytic metal, stemming from a bottom surface of each of said solid metal cell electrodes (7, 8) and extending to the side face of said central ridge (5) of oxidized porous silicon constituting a side wall of the channel (3, 4) extending alongside of the electrode (7, 8);
ion permeable resin filling the pores of the nonconductive porous silicon in the innermost central portion of the ridge (5) to impede fluid flow from one channel (3) to the other (4), and only partly filling the pores in proximity of the definition sides of said central ridge (5) constituting side walls of one and of the other of said parallel channels (3, 4), forming uninterrupted ion permeable resin domains extending from catalytic metal threads (7') stemming from one solid metal cell electrode (7) to catalytic metal threads (8') stemming from the other solid metal cell electrode (8); and
means for electrically connecting said two parallel solid metal cell electrodes (7, 8) to a load circuit of the cell.

Abstract translation: 甲平面集成型燃料电池的结构，在一个区域（2）形成预先渲染可渗透到单晶硅衬底（1）的流体流动和不导电的，具有至少在阳极进料通道的一对平行的通道（3）和一 阴极进料通道（4），分别存在于氧化的多孔氧化的硅区延伸并限定中央氧化多孔硅脊（5）之间; 电介质帽（B，P，图6B，17）在所述引导氧化多孔硅区（2），具有至少在入口和通过在所述一端与所述的对应那里形成出口孔（11-12，13-14） 相对的端部，分别的通道中的每一个（3,4）平行的下方，用于在阴极通道阳极通道（3）和空气或其它含氧气混合物单独循环的流体燃料（4）; 一对平行间隔开的​​固体金属电池的电极（7,8）上延伸，所述中央氧化多孔硅脊的顶面（5）平行于所述通道之间限定（3，4）的通道的整个长度; 阴极沉积的催化金属的不间断的导电的线（7”，8' ），从每个所述固体金属电池电极的的底表面所产生（7,8）并且延伸到所述中央脊的侧面（5）的 氧化构成通道的侧壁的多孔硅（3,4）沿所述电极的侧延伸（7，8）; 离子透过性树脂填充所述非导电性多孔硅的孔中的脊部（5）的最内中心部分，以从一个通道（3），以阻止流体流的其他（4），以及仅部分地填充在所述定义的接近孔 构成一个和另一个所述平行通道的侧壁，所述中央脊部（5）的侧部（3,4），形成从催化金属线（7“）从一个固体金属电池用电极而产生扩展的不间断离子透过性树脂结构域（ 7）以催化金属线（8“）与其它固体金属电池用电极（8）而产生; 和装置，用于电连接所述两个平行的固体金属电池的电极（7,8）到单元的负载电路。

公开(公告)号：EP2280412A3

公开(公告)日：2011-02-16

申请号：EP10184095.7

申请日：2002-11-29

Applicant: STMicroelectronics S.r.l.

Inventor： Renna, Crocifisso Marco Antonio ,  La Magna, Luigi ,  Lorenti, Simona ,  Coffa, Salvatore

IPC: H01L21/764 ,  H01L21/3063 ,  H01L21/762 ,  H01L29/06 ,  B81C1/00 ,  H01L21/302 ,  H01L21/306

CPC classification number: B81C1/00047 ,  B81B2201/0257 ,  B81C2201/0115 ,  B81C2201/0116 ,  H01L21/302 ,  H01L21/306 ,  H01L21/76243 ,  H01L21/764 ,  H01L29/0649 ,  H04R19/005

Abstract: A semiconductor substrate comprising at least a buried insulating cavity (10b, 10d) and comprising:
- a semiconductor substrate (7) having a first type of concentration and having a plurality of trenches (8, 10),
- a surface layer (7a, 9a) on said semiconductor substrate (7) in order to close superficially said plurality of trenches (8, 10) forming said at least a buried insulating cavity (10b, 10d);
- a first semiconductor material layer (9) on said surface layer (7a, 9a) having the same first type of concentration as said semiconductor substrate (7), said first semiconductor material layer (9) comprising at least a trench (11) which is in communication with said at least a buried insulating cavity (10b, 10d).

公开(公告)号：EP1798799B1

公开(公告)日：2008-09-24

申请号：EP05425892.6

申请日：2005-12-16

Applicant: STMicroelectronics S.r.l.

Inventor： Siciliano, Simone Angelo ,  La Magna, Luigi ,  Leonardi, Salvatore

IPC: H01M8/10 ,  H01M8/24 ,  B81C1/00 ,  B81B7/02

CPC classification number: H01M8/1097 ,  H01M8/0271 ,  H01M8/04089 ,  H01M8/241 ,  H01M8/2425 ,  H01M2008/1095

Abstract: A planarly integrated fuel cell structure, formed in a region (2) preliminarily rendered pervious to fluid flow and electrically nonconductive of the monocrystalline silicon substrate (1), has at least a pair of parallel channels, an anode feed channel (3) and a cathode feed channel (4), respectively, extending in the oxidized porous oxidized silicon region and defining a central oxidized porous silicon ridge (5) therebetween; a dielectric cap (B, P, 6b, 17) over said channelled oxidized porous silicon region (2), having at least an inlet and an outlet hole (11-12, 13-14) formed therethrough in correspondence of one end and the opposite end, respectively, of each one of the parallel channels (3, 4) underneath, for separately circulating a fluid fuel in the anode channel (3) and air or other oxygen containing mixture in the cathode channel (4); a pair of parallel spaced solid metal cell electrodes (7, 8) extending over the top surface of said central oxidized porous silicon ridge (5) defined between said parallel channels (3, 4), for the whole length of the channels; cathodically deposited uninterrupted electrically conductive threads (7', 8') of a catalytic metal, stemming from a bottom surface of each of said solid metal cell electrodes (7, 8) and extending to the side face of said central ridge (5) of oxidized porous silicon constituting a side wall of the channel (3, 4) extending alongside of the electrode (7, 8); ion permeable resin filling the pores of the nonconductive porous silicon in the innermost central portion of the ridge (5) to impede fluid flow from one channel (3) to the other (4), and only partly filling the pores in proximity of the definition sides of said central ridge (5) constituting side walls of one and of the other of said parallel channels (3, 4), forming uninterrupted ion permeable resin domains extending from catalytic metal threads (7') stemming from one solid metal cell electrode (7) to catalytic metal threads (8') stemming from the other solid metal cell electrode (8); and means for electrically connecting said two parallel solid metal cell electrodes (7, 8) to a load circuit of the cell.