2.
    发明专利
    未知

    公开(公告)号:AT408250T

    公开(公告)日:2008-09-15

    申请号:AT03743552

    申请日:2003-03-03

    Abstract: An anisotropic conductive film, and its production method, especially suitable for mounting a semiconductor package and sufficiently satisfying the requirements of higher density mounting because short circuit does not occur in the plane direction of the film even if the pitch of electrodes is small, or suitable for mounting a contact probe because conductive connection not fused with a high current can be ensured with a lower pressure and even a high frequency signal can be dealt with. The anisotropic conductive film contains metal powder having such a shape that many fine metal particles are linked as a conductive component, wherein the length of the chain of metal powder is set not longer than the distance between adjacent electrodes being bonded conductively when a semiconductor package is mounted, and the diameter of the chain is set in the range of 1 mu m-20 mu m when a contact probe is mounted. At least a part of the film is formed while orienting a chain formed of a paramagnetic metal with a magnetic field.

    4.
    发明专利
    未知

    公开(公告)号:DE60323473D1

    公开(公告)日:2008-10-23

    申请号:DE60323473

    申请日:2003-03-03

    Abstract: An anisotropic conductive film, and its production method, especially suitable for mounting a semiconductor package and sufficiently satisfying the requirements of higher density mounting because short circuit does not occur in the plane direction of the film even if the pitch of electrodes is small, or suitable for mounting a contact probe because conductive connection not fused with a high current can be ensured with a lower pressure and even a high frequency signal can be dealt with. The anisotropic conductive film contains metal powder having such a shape that many fine metal particles are linked as a conductive component, wherein the length of the chain of metal powder is set not longer than the distance between adjacent electrodes being bonded conductively when a semiconductor package is mounted, and the diameter of the chain is set in the range of 1 mu m-20 mu m when a contact probe is mounted. At least a part of the film is formed while orienting a chain formed of a paramagnetic metal with a magnetic field.

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