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    HEAT TRANSFER PIPE
    7.
    发明专利
    HEAT TRANSFER PIPE 失效

    公开(公告)号：JPS63207999A

    公开(公告)日：1988-08-29

    申请号：JP4120987

    申请日：1987-02-24

    Applicant: TORAY INDUSTRIES

    Inventor： MASUDA KEIZO ,  KAITO SHIGERU ,  HANEDA JUN

    IPC: F28F19/02 ,  F28F21/02

    Abstract: PURPOSE:To provide a heat transfer pipe which has heat transfer ability, airtightness, corrosion resistance, and mechanical strength, by a method wherein a carbon film is formed on at least one surface of the inner and the outer surface of a pipe formed of carbon fiber-reinforced carbon. CONSTITUTION:A raw pipe is a pipe formed of reinforcing carbon, e.g. soft carbon, hard carbon, and thermal decomposition carbon, on a carbon fiber base material formed of continuous fiber and tow of carbon fiber, fabrics. A carbon film is formed preferably by pyrotech graphite (PG) for the reason that airtightness is as high as that of glass irrespective of the magnitude of density. The film can be formed by a chemical gas phase deposition process. The carbon film may be formed by coating polyacrylnitryl resin, furfuryl alcohol resin, a divinylbenzen polymer on the raw pipe, and by heating the resins in inactive atmosphere, and carbonizing the film. The thickness of the carbon film is preferably 0.5-1000mum. In application where an inner pressure is applied, the film may be formed preferably on the inner surface, whereas in application where an external pressure is applied, it is formed preferably on the outer surface.

    SINTERED MATERIAL OF SILICON NITRIDE AND PRODUCTION THEREOF
    9.
    发明专利
    SINTERED MATERIAL OF SILICON NITRIDE AND PRODUCTION THEREOF 失效

    公开(公告)号：JPS6469568A

    公开(公告)日：1989-03-15

    申请号：JP22553987

    申请日：1987-09-09

    Applicant: TORAY INDUSTRIES

    Inventor： SUZUKI TATSUHIKO ,  KAWAKITA SUSUMU ,  MASUDA KEIZO

    IPC: C04B35/584 ,  C04B35/58

    Abstract: PURPOSE:To obtain a high-density sintered material of silicon nitride having high strength and excellent toughness, by blending Si3N4 powder of alpha type with Y2O3 powder and Al2O3 in a specific ratio, molding and sintering in an inert gas. CONSTITUTION:Si3N4 powder comprising >=75wt.% Si3N4 of alpha type is blended with Y2O3 powder or a precursor thereof and Al2O3 powder or a precursor thereof in such a way that the amount of the Y2O3 powder or a precursor thereof is 8-20wt.% calculated as Y2O3 and the amount of the Al2O3 powder or a precursor thereof calculated as Al2O3 is in the weight ratio of (Y2/O3/Al2O3)=5-30. Then the mixture is molded and sintered in an inert gas at 1,600-1,900 deg.C. Si3N4 consists of alpha type and beta type and Si3N4 comprising >=75% alpha type is used in the method. When the amount of Si3N4 of alpha type is

    SILICON NITRIDE SINTERED COMPACT AND PRODUCTION THEREOF
    10.
    发明专利
    SILICON NITRIDE SINTERED COMPACT AND PRODUCTION THEREOF 失效

    公开(公告)号：JPS6461359A

    公开(公告)日：1989-03-08

    申请号：JP21974387

    申请日：1987-09-02

    Applicant: TORAY INDUSTRIES

    Inventor： SUZUKI TATSUHIKO ,  KAWAKITA SUSUMU ,  MASUDA KEIZO

    IPC: C04B35/584 ,  C04B35/58

    Abstract: PURPOSE:To obtain a silicon nitride sintered compact having high density and strength and excellent toughness, by containing Si3N4 containing a specific amount or above of alpha type as a main ingredient and blending La and Mg thereto, molding the blend and burning the moldings in an inert gas. CONSTITUTION:80-96.5wt.% Si3N4 powder wherein at least 75wt.% Si3N4 powder is alpha type is blended with 3-5wt.% La2O3 powder or precursor thereof and 0.5-5wt.% MgO powder or precursor thereof. Then the blend is molded and sintered in an inert gas at 1,600-1,900 deg.C to provide the aimed sintered compact. When beta type becomes to increase and alpha type is reduced to

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