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    PRODUCTION OF DIAMOND THIN FILM
    1.
    发明专利
    PRODUCTION OF DIAMOND THIN FILM 失效

    公开(公告)号：JPH03187997A

    公开(公告)日：1991-08-15

    申请号：JP32538589

    申请日：1989-12-14

    Applicant: TORAY INDUSTRIES

    Inventor： UEDA YOSHIHIKO ,  MATSUMURA TERUICHIRO

    IPC: C01B31/06 ,  C30B29/04

    Abstract: PURPOSE:To obtain a high-purity, high-crystallinity diamond thin film through the thermal decomposition of a mixed gas of hydrogen and a hydrocarbon with tantalum carbide by specifying the temperature of the tantalum carbide and using a substrate of e.g. W, Mo at specified temperature. CONSTITUTION:A mixed gas of hydrogen and a hydrocarbon is thermally decomposed on a substrate consisting of one of W, Mo, tungsten carbide and molybdenum carbide heated to 600-900 deg.C using tantalum carbide heated to 2500-2800 deg.C. If the temperature of the tantalum carbide is either 2800 deg.C, the diamond produced will be poor in crystallinity, thus being unsuitable as an industrial material. Use of said substrate will improve the adherability of the diamond to the substrate. In case the temperature of the substrate is 900 deg.C, graphite deposition will be increased other than the diamond thin film.

    PRODUCTION OF SILICON-CONTAINING COMPOSITION
    2.
    发明专利
    PRODUCTION OF SILICON-CONTAINING COMPOSITION 失效

    公开(公告)号：JPH03164421A

    公开(公告)日：1991-07-16

    申请号：JP28766989

    申请日：1989-11-02

    Applicant: TORAY INDUSTRIES

    Inventor： MATSUMURA TERUICHIRO ,  HOSOYA YUKA

    IPC: C01B33/12

    Abstract: PURPOSE:To produce a silicon-contg. compsn. hardly causing gelation with the lapse of time by adding an acceptor in a stage for producing a silicon-contg. compsn. by the hydrolysis of a silicon compd. CONSTITUTION:A silicon compd. such as tetramethoxysilane or methyltrimethoxysilane is prepd. and about 0.5-6 times as much water as the compd. and about 0.5-2 times as much solvent as the compd. are added to the compd. The solvent may be DMF or isopropanol. At the time when they are brought into a reaction, an acceptor such as tetracyanoquinodimethane or triethyl aluminum is added in about 0.01-1 molar ratio to the silicon compd., a catalyst such as hydrochloric acid or phosphoric acid is further added as required and hydrolysis and/or condensation is carried out. A silicon contg. compsn. hardly causing gelation with the lapse of time is obtd. and a stable silica sol can easily be prepd. by using the compsn.

    FORMATION OF SUPERCONDUCTING THIN FILM
    3.
    发明专利
    FORMATION OF SUPERCONDUCTING THIN FILM 失效

    公开(公告)号：JPH02116620A

    公开(公告)日：1990-05-01

    申请号：JP26781088

    申请日：1988-10-24

    Applicant: TORAY INDUSTRIES

    Inventor： MATSUMURA TERUICHIRO ,  ARIMA TAKANAO ,  SHIMIZU KAZUHARU

    IPC: C04B41/87 ,  C01G1/00 ,  C01G29/00 ,  C23C18/00 ,  C23C18/12 ,  H01B12/00 ,  H01B13/00

    Abstract: PURPOSE:To form a thin film having superior superconductivity at a low cost without requiring a complex expensive apparatus by preparing a soln. from a specified mixture contg. org. compds. of constituent elements and an org. solvent in the presence of gaseous CO2, forming a thin film of a precursor on a base material with the prepd. soln. and sintering the thin film together with the base material. CONSTITUTION:A soln. is prepd. from a mixture contg. org. compds. of Bi, Sr, Ca and Cu and an org. solvent in the presence of gaseous CO2. At least one of the org. compds. is alkoxide. A thin film of a precursor is formed on a heat resistant base material with the prepd. soln. and is sintered together with the base material at 700-900 deg.C in an oxidizing atmosphere. By the presence of gaseous CO2, the dissolution of the alkoxide is accelerated and the prepd. soln. is made uniform.

    MANUFACTURE OF SUPERCONDUCTING MATERIAL
    4.
    发明专利
    MANUFACTURE OF SUPERCONDUCTING MATERIAL 失效

    公开(公告)号：JPH01125880A

    公开(公告)日：1989-05-18

    申请号：JP16710788

    申请日：1988-07-05

    Applicant: TORAY INDUSTRIES

    Inventor： ISHIKAWA KUNIO ,  MATSUMURA TERUICHIRO ,  ASANO MASAYA

    IPC: C01G3/00 ,  C01G1/00 ,  C01G5/00 ,  C04B35/00 ,  C04B35/45 ,  C04B41/87 ,  H01B12/06 ,  H01B13/00 ,  H01L39/24

    Abstract: PURPOSE:To obtain a pattern excellent in accuracy by a method wherein an oxide powder containing a specified element at a required ratio is made to be mixed with a photosensitive material, which is made to be formed into a thin film and the photosensitive material is made to be set by irradiating it with electron rays or the like, and the film is made to be developed so as to remove a non-irradiated part and calcined. CONSTITUTION:An oxide powder containing Cu, and Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, or Lu, and Ba, and Ag at a required ratio except Ag is made to be mixed with a photosensitive material. The mixed material is made to form into a thin film, and a required part of it is made to be set by irradiating visible light rays, ultraviolet rays, X-rays, gamma-rays or electron rays onto it. Next, the thin film is developed to remove a non-irradiated part and calcined in an oxidizing atmosphere at a temperature of 700-1100 deg.C. By these processes, the thickness control and the patterning of the film can be easily achieved and the pattern excellent in accuracy can be obtained.

    SUPERCONDUCTING MATERIAL
    5.
    发明专利
    SUPERCONDUCTING MATERIAL 失效

    公开(公告)号：JPS6428228A

    公开(公告)日：1989-01-30

    申请号：JP9769488

    申请日：1988-04-20

    Applicant: TORAY INDUSTRIES

    Inventor： MATSUMURA TERUICHIRO ,  SHIMIZU KAZUHARU ,  NOBUMASA HITOSHI

    IPC: C01G5/00 ,  C01G1/00 ,  C04B35/00 ,  C04B35/45 ,  H01B12/00

    Abstract: PURPOSE:To obtain a superconducting material having excellent superconducting characteristics, such as the superconducting transition temperature or critical current density, containing silver and expressed by a specific composition formula, by blending compound powders of component elements at a desired ratio, firing, pulverizing, forming the resultant blended powder and firing the pressed blended powder. CONSTITUTION:Powders having =0; b>=0; 0

    PRODUCTION OF DIAMOND-LIKE THIN FILM
    7.
    发明专利
    PRODUCTION OF DIAMOND-LIKE THIN FILM 失效

    公开(公告)号：JPS63190798A

    公开(公告)日：1988-08-08

    申请号：JP2312887

    申请日：1987-02-03

    Applicant: TORAY INDUSTRIES

    Inventor： MATSUMURA TERUICHIRO ,  OSHIMA KATSUNORI ,  MATSUDA FUMIHIRO

    IPC: C30B23/08 ,  C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  C30B29/04

    Abstract: PURPOSE:To enhance the synthesizing velocity of a diamond-like thin film by performing sputtering vapor deposition while keeping carbon as a target under the existence of hydrocarbon having cyano radical. CONSTITUTION:Hydrocarbon contg. cyano group and an unsaturated C-C bond such as cyanoacetylene, dicyanoacetylene, acrylonitrile and methacrylonitrile is prepared. Sputtering vapor deposition is performed while keeping carbon as a target under the existence of hydrocarbon having one or more cyano group selected from among these. Thereby a diamond-like carbon thin film is quickly formed on a substrate.

    SILICON-CONTAINING SOLUTION AND FILM FORMING COATING SOLUTION
    10.
    发明专利
    SILICON-CONTAINING SOLUTION AND FILM FORMING COATING SOLUTION 失效

    公开(公告)号：JPH03126612A

    公开(公告)日：1991-05-29

    申请号：JP26248989

    申请日：1989-10-06

    Applicant: TORAY INDUSTRIES

    Inventor： HOSOYA YUKA ,  MATSUMURA TERUICHIRO

    IPC: C01B33/12 ,  C08G77/06 ,  C08L83/04

    Abstract: PURPOSE:To obtain the silicon-contg. soln. with its gelling controlled or prevented by hydrolyzing or condensing an alkoxysilane with a water-contg. H-type cation-exchange resin as a catalyst. CONSTITUTION:An alkoxysilane is hydrolyzed and/or condensed in the presence of a catalyst to obtain a silicon-contg. soln. In this case, a water-contg. H-type cation-exchange resin is used as the catalyst. A hydrogen ion-exchange resin having a dissociation group capable of exchanging a cation such as an acidic hydroxyl group, a sulfonic group and a carboxyl group is designated as the H-type cation exchange resin. The ion exchange resin contg. >=10wt.% or about 50-80wt.% water is preferably used. The weight ratio of the ion-exchange resin to be used to the alkoxysilane is controlled to >=0.2 or to

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