Bulk acoustic wave resonator and method of manufacturing thereof
    2.
    发明申请
    Bulk acoustic wave resonator and method of manufacturing thereof 审中-公开
    体声波谐振器及其制造方法

    公开(公告)号:US20120280758A1

    公开(公告)日:2012-11-08

    申请号:US13508997

    申请日:2010-11-19

    Abstract: The invention concerns a novel bulk acoustic wave (BAW) resonator design and method of manufacturing thereof The bulk acoustic wave resonator comprises a resonator portion, which is provided with at least one void having the form of a trench which forms a continuous closed path on the resonator portion. By manufacturing the void in the same processing step as the outer dimensions of the resonator portion, the effect of processing variations on the resonant frequency of the resonator can be reduced. By means of the invention, the accuracy of BAW resonators can be increased.

    Abstract translation: 本发明涉及一种新颖的体声波(BAW)谐振器设计及其制造方法。本体声波谐振器包括谐振器部分,该谐振器部分设置有至少一个具有沟槽形式的空隙,该空隙形成在 谐振器部分。 通过在与谐振器部分的外部尺寸相同的处理步骤中制造空隙,可以减小对谐振器的谐振频率的处理变化的影响。 通过本发明,可以提高BAW谐振器的精度。

    Multilayer transducer with bonded contacts and method for implementation
of bonding
    3.
    发明授权
    Multilayer transducer with bonded contacts and method for implementation of bonding 失效
    具有粘结接触的多层传感器和实现粘接的方法

    公开(公告)号:US5083234A

    公开(公告)日:1992-01-21

    申请号:US553597

    申请日:1990-07-18

    CPC classification number: G01L9/0042 H01L21/78 H01L2924/0002 Y10T29/435

    Abstract: In a novel multilayer transducer (1') with bonded contacts and a method for fabricating the bonded contact areas (5') of the transducer, the contact areas (5') are formed on the side surface (7) of the transducer by metal deposition using laser-based deposition, sputter deposition or another suitable metallization method. By virtue of the fabrication method of the contact areas, the size of the transducer (1')can be reduced and the transducer (1') can be bonded to a circuit board using surface-mount technology.

    Abstract translation: 在具有接合触点的新型多层传感器(1')和用于制造换能器的接合接触区域(5')的方法中,接触区域(5')通过金属在换能器的侧表面(7)上形成 使用基于激光的沉积,溅射沉积或其它合适的金属化方法的沉积。 通过接触区域的制造方法,可以减小换能器(1')的尺寸,并且可以使用表面贴装技术将换能器(1')接合到电路板。

    Dew point detection method and device
    4.
    发明授权
    Dew point detection method and device 失效
    露点检测方法及装置

    公开(公告)号:US4378168A

    公开(公告)日:1983-03-29

    申请号:US238563

    申请日:1981-02-26

    CPC classification number: G01N25/66 G01N2291/02845 G01N2291/02881

    Abstract: A piezoelectric sensor consists of material for transmitting elastic waves and has a surface subjected to the condensation and presence of dew and liquid to be detected. A wave producing device includes a transmitter for producing an acoustic surface wave on the surface in conjunction with piezoelectric phenomena of the sensor. A detector includes a receiver for receiving the wave after transmission thereof across the surface. The wave is variably attenuated in transmission between the transmitter and receiver in accordance with dew or liquid on the surface. A measuring device measures the attenuation of the detected wave and thereby indicates the dew point or presence of liquid on the surface.

    Abstract translation: 压电传感器由用于传输弹性波的材料组成,并且具有经受冷凝的表面和待检测的露水和液体的存在。 波形产生装置包括与传感器的压电现象一起在表面上产生声表面波的发射器。 检测器包括用于在通过表面传输波之后接收波的接收器。 根据表面上的露水或液体,波在发射机和接收机之间的传输中可变地衰减。 测量装置测量检测到的波的衰减,从而指示表面上的露点或液体存在。

    Method for reducing the temperature dependence of a capacitive sensor and a capacitive sensor construction
    6.
    发明授权
    Method for reducing the temperature dependence of a capacitive sensor and a capacitive sensor construction 有权
    降低电容传感器和电容传感器结构温度依赖性的方法

    公开(公告)号:US07302857B2

    公开(公告)日:2007-12-04

    申请号:US10503089

    申请日:2003-02-10

    Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.

    Abstract translation: 一种传感器的制造方法,包括在导电性基板的顶部形成绝缘层,在绝缘层的顶部形成导电性电极。 此外,绝缘层形成为包括形成在导电电极的边缘处的支撑区域和形成在导电电极下方的部分区域,并且绝缘层的局部区域的厚度(d 2)小于厚度(d 1)绝缘区域的支撑区域。

    Method for manufacturing a silicon sensor and a silicon sensor
    7.
    发明授权
    Method for manufacturing a silicon sensor and a silicon sensor 有权
    硅传感器和硅传感器的制造方法

    公开(公告)号:US06998059B2

    公开(公告)日:2006-02-14

    申请号:US10472465

    申请日:2002-03-21

    Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

    Abstract translation: 本发明涉及一种硅传感器结构和硅传感器的制造方法。 根据该方法,通过蚀刻开口形成单晶硅晶片(10),至少一个弹簧元件构造(7)和连接到所述弹簧元件构型(7)的至少一个地震块(8)。 根据本发明,通过干蚀刻方法制造延伸穿过硅晶片深度的开口和沟槽(8),并且用于控制弹簧元件构型(7)的弹簧常数的蚀刻工艺基于湿蚀刻 方法。

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