公开(公告)号：US20150001416A1

公开(公告)日：2015-01-01

申请号：US14305905

申请日：2014-06-16

Applicant: Lawrence Livermore National Security, LLC

Inventor： John W. Elmer ,  Alan T. Teruya

IPC: H01J37/244 ,  H01J37/30

CPC classification number: H01J37/244 ,  G01T1/2914 ,  H01J37/315 ,  H01J2237/24405 ,  H01J2237/24542 ,  H01J2237/28 ,  H01J2237/30472

Abstract: A system for analyzing an electron beam including a circular electron beam diagnostic sensor adapted to receive the electron beam, the circular electron beam diagnostic sensor having a central axis; an annular sensor structure operatively connected to the circular electron beam diagnostic sensor, wherein the sensor structure receives the electron beam; a system for sweeping the electron beam radially outward from the central axis of the circular electron beam diagnostic sensor to the annular sensor structure wherein the electron beam is intercepted by the annular sensor structure; and a device for measuring the electron beam that is intercepted by the annular sensor structure.

Abstract translation: 一种用于分析包括适于接收电子束的圆形电子束诊断传感器的电子束的系统，所述圆形电子束诊断传感器具有中心轴线; 环形传感器结构可操作地连接到圆形电子束诊断传感器，其中传感器结构接收电子束; 用于将电子束从圆形电子束诊断传感器的中心轴径向向外扫描到环形传感器结构的系统，其中电子束被环形传感器结构拦截; 以及用于测量被环形传感器结构拦截的电子束的装置。

公开(公告)号：US07888660B2

公开(公告)日：2011-02-15

申请号：US11341838

申请日：2006-01-27

Applicant: Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

Inventor： Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

IPC: G21K5/04

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。

公开(公告)号：US20060169924A1

公开(公告)日：2006-08-03

申请号：US11341839

申请日：2006-01-27

Applicant: Kenneth Purser ,  Harald Enge ,  Norman Turner

Inventor： Kenneth Purser ,  Harald Enge ,  Norman Turner

IPC: H01J37/08

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。

公开(公告)号：US06977382B2

公开(公告)日：2005-12-20

申请号：US10619933

申请日：2003-07-15

Applicant: Thorsten Löwer

Inventor： Thorsten Löwer

IPC: B23K15/00 ,  H01J37/304 ,  H01J37/315 ,  G01N27/00

CPC classification number: H01J37/315 ,  B23K15/00 ,  H01J37/304 ,  H01J2237/30433 ,  H01J2237/30455 ,  H01J2237/30477

Abstract: To measure the intensity profile of an electron beam the electron beam is conducted on to a measuring structure having areas with different back-scattering properties, and back-scattered electrons which are produced by scanning of the measuring structure by the electron beam by means of a deflector unit are measured by a sensor ring. The measuring structure can preferably be installed into and removed from an electron-beam welder and consists of a graphite slab from which a tungsten needle projects perpendicularly.

Abstract translation: 为了测量电子束的强度分布，电子束被传导到具有不同背散射特性的区域的测量结构和通过电子束通过扫描测量结构产生的背散射电子 偏转器单元由传感器环测量。 测量结构可以优选地安装在电子束焊机中和从电子束焊机中移除，并且由钨针垂直地突出的石墨板组成。

公开(公告)号：US3602685A

公开(公告)日：1971-08-31

申请号：US3602685D

申请日：1966-06-28

Applicant: ATOMIC ENERGY COMMISSION

Inventor： ITOH FUJIO R

IPC: B23K15/00 ,  H01J37/315 ,  B23K9/00

CPC classification number: H01J37/315 ,  B23K15/0053 ,  B23K15/0093

Abstract: A method of electron-beam welding is disclosed, particularly for welding alloys such as ZIRCALOY-2 or -4. Narrow, deep welds of minimal porosity are produced by defocusing the beam at its point of impingement on the joint. A short, narrow dike is provided on the surface of the joint within which pressure of the molten metal is built up. This pressure suppresses appreciable loss of alloying components from the weld metal.

公开(公告)号：US2778926A

公开(公告)日：1957-01-22

申请号：US30794352

申请日：1952-09-04

Applicant: LICENTIA GMBH

Inventor： WILHELM SCHNEIDER

IPC: A47C31/04 ,  B23K15/00 ,  H01J37/305 ,  H01J37/315 ,  H01L21/00

CPC classification number: H01L21/67092 ,  A47C31/04 ,  B23K15/0093 ,  H01J37/3056 ,  H01J37/315 ,  H01L21/00

公开(公告)号：US09142384B2

公开(公告)日：2015-09-22

申请号：US14302024

申请日：2014-06-11

Applicant: FEI Company

Inventor： Rudolf Johannes Peter Gerardus Schampers ,  Johannes Antonius Hendricus Wilhelmus Gerardus Persoon ,  Andreas Theodorus Engelen

IPC: H01J37/20 ,  H01J37/26 ,  G01N1/28 ,  G01N1/42 ,  G02B21/32 ,  H01J37/315

CPC classification number: H01J37/20 ,  G01N1/28 ,  G01N1/42 ,  G02B21/32 ,  H01J37/26 ,  H01J37/315 ,  H01J2237/002 ,  H01J2237/2065 ,  H01J2237/31744 ,  H01J2237/31745

Abstract: The invention relates to a method of welding a vitreous biological sample at a temperature below the glass transition temperature of approximately −137° C. to a micromanipulator, also kept at a temperature below the glass transition temperature. Where prior art methods used IBID with, for example, propane, or a heated needle (heated resistively or by e/g/laser), the invention uses a vibrating needle to locally melt the sample. By stopping the vibration, the sample freezes to the micromanipulator. The heat capacity of the heated parts is small, and the amount of material that stays in a vitreous condition thus large.

Abstract translation: 本发明涉及一种将玻璃态生物样品在低于大约-137℃的玻璃化转变温度的温度下焊接到也保持在低于玻璃化转变温度的温度下的显微操纵器的方法。 当现有技术方法使用IBID与例如丙烷或加热针（电阻加热或e / g /激光）时，本发明使用振动针来局部熔化样品。 通过停止振动，样品冻结到显微操纵器。 加热部件的热容量小，因此玻璃状态的材料的量变大。

公开(公告)号：US08791426B2

公开(公告)日：2014-07-29

申请号：US12917028

申请日：2010-11-01

Applicant: John W. Elmer ,  Alan T. Teruya

Inventor： John W. Elmer ,  Alan T. Teruya

IPC: H01J37/244 ,  G01T1/29

CPC classification number: H01J37/244 ,  G01T1/2914 ,  H01J37/315 ,  H01J2237/24405 ,  H01J2237/24542 ,  H01J2237/28 ,  H01J2237/30472

Abstract: A system for analyzing an electron beam including a circular electron beam diagnostic sensor adapted to receive the electron beam, the circular electron beam diagnostic sensor having a central axis; an annular sensor structure operatively connected to the circular electron beam diagnostic sensor, wherein the sensor structure receives the electron beam; a system for sweeping the electron beam radially outward from the central axis of the circular electron beam diagnostic sensor to the annular sensor structure wherein the electron beam is intercepted by the annular sensor structure; and a device for measuring the electron beam that is intercepted by the annular sensor structure.

Abstract translation: 一种用于分析包括适于接收电子束的圆形电子束诊断传感器的电子束的系统，所述圆形电子束诊断传感器具有中心轴线; 环形传感器结构可操作地连接到圆形电子束诊断传感器，其中传感器结构接收电子束; 用于将电子束从圆形电子束诊断传感器的中心轴径向向外扫描到环形传感器结构的系统，其中电子束被环形传感器结构拦截; 以及用于测量被环形传感器结构拦截的电子束的装置。

公开(公告)号：US20080143278A1

公开(公告)日：2008-06-19

申请号：US11829412

申请日：2007-07-27

Applicant: Karsten Zosel

Inventor： Karsten Zosel

IPC: H01J29/48 ,  H03F3/54

CPC classification number: H03F3/217 ,  B23K15/0026 ,  B23K15/0046 ,  B23K15/02 ,  H01J37/24 ,  H01J37/31 ,  H01J37/315 ,  H01J2237/2485 ,  H01J2237/30483

Abstract: A high-power amplifier having a current-adding array is provided for high-speed driving of an inductive element, e.g., a deflection coil of an electron beam gun. The amplifier includes a first voltage node (U1) and a second voltage node (UV), at least one of which is connected to a regulated power supply, and a plurality of first switchable bridges (B11, B12, B13, . . . , B1k) connected in parallel between the first and second voltage nodes. Each switchable bridge includes at least one resistor (R11, R12, R13, . . . , R1k) with a resistance value that is selected so that a first resistor (R11) has a first resistance value WR11 equal to Rmin, a second resistor (R12) has a second resistance value WR12 greater than or equal to WR11 and an n-th resistor has an n-th resistance value WR1n greater than or equal to WR1n−1.

Abstract translation: 提供具有电流相加阵列的高功率放大器用于电子元件（例如电子束枪的偏转线圈）的高速驱动。 放大器包括第一电压节点（U SUB）和第二电压节点（U SUB），其中至少一个连接到稳压电源，以及 多个第一可切换桥接器（B 1 SUB 1，B 1 2 2，B 1 3 3，...，B 1 N， / SUB>）并联连接在第一和第二电压节点之间。 每个可切换桥包括至少一个电阻器（R 1 SUB 1，R 1 2，R 1 3，...，R 1，SUB 具有选择的电阻值，使得第一电阻器（R 1> 1）具有等于R 1的第一电阻值WR 1 <1> SUB> min ，第二电阻器（R 1 2 2）具有大于或等于WR 1 <1的第二电阻值WR 1 <2> / SUB>，第n电阻器具有大于或等于WR 1 N-1的n电阻值WR 1 N n。

公开(公告)号：US06933507B2

公开(公告)日：2005-08-23

申请号：US10619702

申请日：2003-07-15

Applicant: Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

Inventor： Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

IPC: H01J37/141 ,  H01J37/08 ,  H01J37/14 ,  H01J37/147 ,  H01J37/315 ,  H01J37/317 ,  H01L21/425

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。