公开(公告)号：US20160293431A1

公开(公告)日：2016-10-06

申请号：US14675659

申请日：2015-03-31

Applicant: Lam Research Corporation

Inventor： Saravanapriyan Sriraman ,  Monica Titus ,  Alex Paterson

IPC: H01L21/3065 ,  H01L21/31 ,  H01L21/67

CPC classification number: H01L21/3065 ,  C23C16/45561 ,  C23C16/45574 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32926 ,  H01L21/31 ,  H01L21/67069

Abstract: Methods, systems, and computer programs are presented for controlling gas flow in a semiconductor manufacturing chamber. The method includes flowing a reactant gas thorough an inner feed and a tuning gas through an outer feed surrounding the inner feed, such that the gases do not mix until both are introduced in the chamber. Further, the flow of the reactant gas is convective, and the flow of the tuning gas is directed at an angle from the direction of the reactant gas, providing a delivery of the tuning gas in closer proximity to the RF power before further mixing with the reactant gas. Radio frequency power is provided to the electrode to ignite a plasma using the reactant and tuning gases.

Abstract translation: 提出了用于控制半导体制造室中的气体流动的方法，系统和计算机程序。 该方法包括使内部进料和调谐气体通过围绕内部进料的外部进料流动的反应气体，使得气体不混合，直到两者都被引入室中。 此外，反应气体的流动是对流的，并且调谐气体的流动与反应物气体的方向成一定角度，提供调节气体更靠近RF功率的输送，然后进一步与 反应气体。 向电极提供射频功率，以使用反应物和调谐气体点燃等离子体。

公开(公告)号：US20160276135A1

公开(公告)日：2016-09-22

申请号：US15006174

申请日：2016-01-26

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Tetsuo YAMAMOTO ,  Kazuyuki TOYODA ,  Shun MATSUI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/455 ,  C23C16/34 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/505 ,  H01J37/321 ,  H01J37/3211

Abstract: A substrate processing apparatus includes a substrate mounting table on which a substrate is mounted, a process chamber including the substrate mounting table, a gas supply unit configured to supply a gas into the process chamber, and a plasma generating unit configured to convert the gas supplied into the process chamber from the gas supply unit into a plasma state. The plasma generating unit includes a plasma generating chamber configured to serve as a flow path of the gas supplied into the process chamber from the gas supply unit, and a plasma generating conductor configured by a conductor disposed to surround the plasma generating chamber. The plasma generating conductor includes a plurality of main conductor parts extending along a mainstream direction of the gas within the plasma generating chamber, and a plurality of connection conductor parts configured to electrically connect the plurality of main conductor parts with each other.

Abstract translation: 基板处理装置包括：基板安装台，安装有基板的基板安装台，包括基板安装台的处理室，被配置为向处理室供给气体的气体供给单元;以及等离子体生成单元， 从气体供应单元进入处理室进入等离子体状态。 等离子体发生单元包括等离子体产生室，其被配置为用作从气体供应单元供应到处理室中的气体的流动路径，以及等离子体发生导体，其由布置成围绕等离子体产生室的导体构成。 等离子体产生导体包括沿着等离子体发生室内的气体的主流方向延伸的多个主导体部分和被配置为将多个主导体部彼此电连接的多个连接导体部。

公开(公告)号：US20160254123A1

公开(公告)日：2016-09-01

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. WILLWERTH ,  David PALAGASHVILI ,  Valentin N. TODOROW ,  Stephen YUEN

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract translation: 提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。 该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，提供了一种用于调谐等离子体处理室的过程，其包括确定处理室内的等离子体的位置，选择耦合到盖式加热器的电感线圈的电感和/或位置，其将等离子体位置从 确定位置到目标位置，以及等离子体处理具有所选择的电感和/或位置的电感线圈的衬底。

公开(公告)号：US09433072B2

公开(公告)日：2016-08-30

申请号：US14335999

申请日：2014-07-21

Applicant: PERKINELMER HEALTH SCIENCES, INC.

Inventor： Peter J Morrisroe

IPC: H01F5/00 ,  H05H1/30 ,  G01N21/31 ,  G01N21/73 ,  H01F27/23

CPC classification number: H01J49/105 ,  G01N21/3103 ,  G01N21/73 ,  H01F5/00 ,  H01F27/23 ,  H01F27/2823 ,  H01F38/14 ,  H01J37/321 ,  H01J37/3211 ,  H01J49/025 ,  H05H1/30

Abstract: Certain embodiments described herein are directed to induction devices comprising an oxidation resistant material. In certain examples, the induction device comprises a coil of wire that is produced from the oxidation resistant material. In some examples, the oxidation resistant induction device can be used to sustain an inductively coupled plasma in a torch.

Abstract translation: 本文描述的某些实施例涉及包含耐氧化材料的感应装置。 在某些实例中，感应装置包括由抗氧化材料制成的线圈。 在一些实例中，抗氧化感应装置可用于维持焊炬中的电感耦合等离子体。

公开(公告)号：US20160212833A1

公开(公告)日：2016-07-21

申请号：US15082465

申请日：2016-03-28

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/46 ,  H01J37/32 ,  H01F41/06

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US09385003B1

公开(公告)日：2016-07-05

申请号：US14623144

申请日：2015-02-16

Applicant: Lam Research Corporation

Inventor： Ming-Shu Kuo ,  Qinghua Zhong ,  Helene Del Puppo ,  Ganesh Upadhyaya ,  Gowri Kamarthy

IPC: H01L21/302 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/3205

CPC classification number: H01L21/32137 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/02068 ,  H01L21/0337 ,  H01L21/32055

Abstract: Systems and methods for etching a substrate include arranging a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from a group consisting of silicon dioxide and silicon nitride. The dummy structure is made of silicon. Carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. Plasma is generated in the processing chamber. The dummy structure is etched.

Abstract translation: 用于蚀刻衬底的系统和方法包括在处理室中布置包括第一结构和虚设结构的衬底。 第一结构由选自二氧化硅和氮化硅的材料制成。 虚拟结构由硅制成。 载气被供应到处理室。 将三氟化氮和分子氢气供给到处理室。 在处理室中产生等离子体。 伪结构被蚀刻。

公开(公告)号：US20160189932A1

公开(公告)日：2016-06-30

申请号：US15063430

申请日：2016-03-07

Applicant: Lam Research Corporation

Inventor： John C. Valcore, JR. ,  Bradford J. Lyndaker

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/32183 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/46 ,  H05H2001/466 ,  H05H2001/4682

Abstract: Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value.

Abstract translation: 描述了用于调整与等离子体阻抗相关联的参数的系统和方法。 其中一种方法包括接收信息以确定变量。 该信息是在传输线路上测量的，并且当该参数具有第一值时进行测量。 传输线用于向等离子体室供电。 该方法还包括确定变量是否处于局部最小值，并且在确定变量处于局部最小值时提供第一值以调整阻抗匹配电路。 该方法包括在确定变量不在局部最小值时将第一值改变为参数的第二值，并且当参数具有第二值时确定变量是否处于局部最小值。

公开(公告)号：US09378931B2

公开(公告)日：2016-06-28

申请号：US14796188

申请日：2015-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ohyung Kwon ,  Namjun Kang ,  Doug-Yong Sung ,  Jung-hyun Cho

IPC: H01J7/24 ,  H01J37/32 ,  H05B31/26

CPC classification number: H01J37/32183 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32926 ,  H01J2237/327 ,  H01J2237/334 ,  H05B31/26

Abstract: A pulse plasma apparatus includes a process chamber, source RF generator configured to supply first and second level RF pulse power having first and second duty cycles to an upper electrode of the process chamber, a reflected power indicator configured to indicate reflection RF power, a first matching network, and a controller. The first matching network is configured to match an impedance of the process chamber with an impedance of the source RF generator as a first or second matching capacitance value, respectively when the first level RF pulse power or second level RF pulse power is supplied, respectively. The controller is configured to calculate a third matching capacitance value based on the first and second matching capacitance values and a ratio of the first and second duty cycles, provide the third matching capacitance values to the first matching network, and control the source RF generator and first matching network.

Abstract translation: 脉冲等离子体装置包括处理室，源RF发生器，被配置为向处理室的上电极提供具有第一和第二占空比的第一和第二电平的RF脉冲功率，被配置为指示反射RF功率的反射功率指示器，第一 匹配网络和控制器。 当分别提供第一级RF脉冲功率或第二级RF脉冲功率时，第一匹配网络被配置为将处理室的阻抗与源RF发生器的阻抗分别匹配为第一或第二匹配电容值。 控制器被配置为基于第一和第二匹配电容值和第一和第二占空比的比率来计算第三匹配电容值，向第一匹配网络提供第三匹配电容值，并且控制源RF发生器和 第一匹配网络。

公开(公告)号：US20160181117A1

公开(公告)日：2016-06-23

申请号：US14612095

申请日：2015-02-02

Applicant: Lam Research Corporation

Inventor： Reza Arghavani ,  Shashank C. Deshmukh ,  Eric A. Hudson ,  Tom Kamp ,  Samantha Tan ,  Gerardo Adrian Delgadino

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32 ,  H01L21/263

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32899 ,  H01L21/6719 ,  H01L21/67213 ,  H01L21/76897

Abstract: The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.

Abstract translation: 本文的实施例涉及用于蚀刻电介质材料中凹陷特征的方法和装置。 在各种实施例中，在两个蚀刻操作中形成凹陷特征。 第一蚀刻操作部分地蚀刻特征并且可以在配置成产生电容耦合等离子体的反应器中进行。 第一蚀刻操作可能在底层半导体材料由于穿过半导体材料顶部的电介质的离子穿透而经受显着的损坏之前结束。 第二蚀刻操作可以在配置成产生电感耦合等离子体的反应器中进行。 第一和第二蚀刻操作本身可以是多步循环过程。

公开(公告)号：US20160181067A1

公开(公告)日：2016-06-23

申请号：US15055032

申请日：2016-02-26

Applicant: Applied Materials, Inc.

Inventor： Saravjeet SINGH ,  Graeme Jamieson SCOTT ,  Ajay KUMAR

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32623 ,  H01J37/32633 ,  H01J2237/334

Abstract: Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.

Abstract translation: 本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。 离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在室主体面向基板接收表面的壁上的等离子体源，离子基屏蔽 设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。 可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。 离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。 孔径尺寸，形状和/或中心轴位置可以使用插入件来改变。