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    VAPOUR ETCH OF SILICON DIOXIDE WITH IMPROVED SELECTIVITY
    105.
    发明申请
    VAPOUR ETCH OF SILICON DIOXIDE WITH IMPROVED SELECTIVITY 审中-公开
    二氧化硅的蒸气蚀刻具有改进的选择性

    公开(公告)号：US20140017901A1

    公开(公告)日：2014-01-16

    申请号：US13980638

    申请日：2012-01-24

    Applicant: Anthony O'Hara

    Inventor： Anthony O'Hara

    IPC: H01L21/306

    CPC classification number: H01L21/30604 ,  B81C1/00595 ,  B81C2201/0109 ,  B81C2201/0132 ,  H01L21/31116

    Abstract: The etching of a sacrificial silicon dioxide (SiO2) portion in a microstructure such as a microelectro-mechanical structures (MEMS) by the use an etchant gas, namely hydrogen fluoride (HF) vapour is performed with greater selectivity to other portions within the MEMS, and in particular portions of silicon nitride (Si3N4). This is achieved by the addition of a secondary non-etchant gas suitable for increase the ratio of difluoride reactive species (HF2− and H2F2) to monofluoride reactive species (F−, and HF) within the HF vapour. The secondary non-etchant gas may comprise a hydrogen compound gas. The ratio of difluoride reactive species (HF2− and H2F2) to the monofluoride reactive species (F−, and HF) within the HF vapour can also be increased by setting an etch operating temperature to 20° C. or below.

    Abstract translation: 通过使用蚀刻剂气体，即氟化氢（HF）蒸气在诸如微电子机械结构（MEMS）的微结构中蚀刻牺牲二氧化硅（SiO 2）部分，对MEMS内的其它部分具有更高的选择性， 特别是氮化硅（Si 3 N 4）的一部分。 这通过添加适合于增加HF蒸气中二氟化物反应性物质（HF 2和H 2 F 2）与单氟化物反应性物质（F-和HF）的比例的二次非蚀刻剂气体来实现。 次级非蚀刻剂气体可以包括氢化合物气体。 通过将蚀刻操作温度设定为20℃或更低，也可以增加氟化氢反应物质（HF 2 - 和H 2 F 2）与HF蒸气中的单氟化物反应性物质（F-和HF）的比例。

    Sacrificial layers made from aerogel for microelectromechanical systems (MEMS) device fabrication processes
    107.
    发明授权
    Sacrificial layers made from aerogel for microelectromechanical systems (MEMS) device fabrication processes 有权
    用于微机电系统（MEMS）器件制造工艺的气凝胶制成的牺牲层

    公开(公告)号：US08293657B2

    公开(公告)日：2012-10-23

    申请号：US12940348

    申请日：2010-11-05

    Applicant: James F. Detry

    Inventor： James F. Detry

    IPC: H01L21/302 ,  H01L21/461

    CPC classification number: B81C1/00047 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C2201/0109

    Abstract: Systems and methods for processing sacrificial layers in MEMS device fabrication are provided. In one embodiment, a method comprises: applying a patterned layer of Aerogel material onto a substrate to form an Aerogel sacrificial layer; applying at least one non-sacrificial silicon layer over the Aerogel sacrificial layer, wherein the non-sacrificial silicon layer is coupled to the substrate through one or more gaps provided in the patterned layer of Aerogel material; and removing the Aerogel sacrificial layer by exposing the Aerogel sacrificial layer to a removal liquid.

    Abstract translation: 提供了用于在MEMS器件制造中处理牺牲层的系统和方法。 在一个实施例中，一种方法包括：将图案化的气凝胶材料层施加到基底上以形成气凝胶牺牲层; 在所述气凝胶牺牲层上施加至少一个非牺牲硅层，其中所述非牺牲硅层通过设置在所述图案化的气凝胶材料层中的一个或多个间隙而耦合到所述衬底; 并通过将气凝胶牺牲层暴露于去除液体来除去气凝胶牺牲层。

    PROCESS OF FORMING AN AIR GAP IN A MICROELECTROMECHANICAL SYSTEM DEVICE USING A LINER MATERIAL
    109.
    发明申请
    PROCESS OF FORMING AN AIR GAP IN A MICROELECTROMECHANICAL SYSTEM DEVICE USING A LINER MATERIAL 审中-公开
    使用内衬材料在微电子系统装置中形成气隙的方法

    公开(公告)号：US20120062570A1

    公开(公告)日：2012-03-15

    申请号：US13175497

    申请日：2011-07-01

    Applicant: Marc Maurice MIGNARD

    Inventor： Marc Maurice MIGNARD

    IPC: G06T1/00 ,  B05D5/12 ,  B32B38/10 ,  B32B3/10

    CPC classification number: G02B26/001 ,  B81B2201/047 ,  B81C1/00047 ,  B81C2201/0109 ,  B81C2201/019 ,  G02B26/0841 ,  Y10T428/24851

    Abstract: This disclosure provides systems, methods and apparatus for forming an air gap in an EMS device without using a sacrificial layer in the air gap. In some implementations, a support structure is formed on the substrate, and a sacrificial substrate is provided on the support structure. A liner material is deposited on the substrate, the support structure, and the sacrificial substrate, for instance, via an atomic layer deposition (ALD) process. The sacrificial substrate can be removed, and a top layer material can be deposited on the exposed areas of the support structure and the liner material. The liner material defines an air gap between the substrate and the top layer material.

    Abstract translation: 本公开提供了在EMS设备中形成气隙而不在气隙中使用牺牲层的系统，方法和装置。 在一些实施方案中，在衬底上形成支撑结构，并且在支撑结构上提供牺牲衬底。 衬垫材料例如经由原子层沉积（ALD）工艺沉积在衬底，支撑结构和牺牲衬底上。 可以去除牺牲衬底，并且顶层材料可以沉积在支撑结构和衬垫材料的暴露区域上。 衬垫材料限定了衬底和顶层材料之间的气隙。

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